2005-04-17 05:20:36 +07:00
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/*
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* linux/include/linux/mtd/nand.h
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*
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2010-08-09 02:58:20 +07:00
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* Copyright © 2000-2010 David Woodhouse <dwmw2@infradead.org>
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* Steven J. Hill <sjhill@realitydiluted.com>
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* Thomas Gleixner <tglx@linutronix.de>
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2005-04-17 05:20:36 +07:00
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*
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* This program is free software; you can redistribute it and/or modify
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* it under the terms of the GNU General Public License version 2 as
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* published by the Free Software Foundation.
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*
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2006-05-23 16:50:56 +07:00
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* Info:
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* Contains standard defines and IDs for NAND flash devices
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2005-04-17 05:20:36 +07:00
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*
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2006-05-23 16:50:56 +07:00
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* Changelog:
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* See git changelog.
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2005-04-17 05:20:36 +07:00
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*/
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#ifndef __LINUX_MTD_NAND_H
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#define __LINUX_MTD_NAND_H
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#include <linux/wait.h>
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#include <linux/spinlock.h>
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#include <linux/mtd/mtd.h>
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2009-09-21 04:28:14 +07:00
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#include <linux/mtd/flashchip.h>
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2009-09-21 04:28:04 +07:00
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#include <linux/mtd/bbm.h>
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2005-04-17 05:20:36 +07:00
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struct mtd_info;
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2010-02-27 01:32:56 +07:00
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struct nand_flash_dev;
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2005-04-17 05:20:36 +07:00
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/* Scan and identify a NAND device */
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2010-10-05 17:41:01 +07:00
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extern int nand_scan(struct mtd_info *mtd, int max_chips);
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/*
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* Separate phases of nand_scan(), allowing board driver to intervene
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* and override command or ECC setup according to flash type.
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*/
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2010-02-27 01:32:56 +07:00
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extern int nand_scan_ident(struct mtd_info *mtd, int max_chips,
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struct nand_flash_dev *table);
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2006-09-25 23:06:53 +07:00
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extern int nand_scan_tail(struct mtd_info *mtd);
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2005-04-17 05:20:36 +07:00
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/* Free resources held by the NAND device */
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2010-10-05 17:41:01 +07:00
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extern void nand_release(struct mtd_info *mtd);
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2005-04-17 05:20:36 +07:00
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2006-09-26 03:58:50 +07:00
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/* Internal helper for board drivers which need to override command function */
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extern void nand_wait_ready(struct mtd_info *mtd);
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2011-06-24 04:12:08 +07:00
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/* locks all blocks present in the device */
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2010-02-08 17:20:49 +07:00
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extern int nand_lock(struct mtd_info *mtd, loff_t ofs, uint64_t len);
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2011-06-24 04:12:08 +07:00
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/* unlocks specified locked blocks */
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2010-02-08 17:20:49 +07:00
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extern int nand_unlock(struct mtd_info *mtd, loff_t ofs, uint64_t len);
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2005-04-17 05:20:36 +07:00
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/* The maximum number of NAND chips in an array */
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#define NAND_MAX_CHIPS 8
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/*
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* Constants for hardware specific CLE/ALE/NCE function
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2006-05-24 04:25:53 +07:00
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*
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* These are bits which can be or'ed to set/clear multiple
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* bits in one go.
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*/
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2005-04-17 05:20:36 +07:00
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/* Select the chip by setting nCE to low */
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2006-05-24 04:25:53 +07:00
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#define NAND_NCE 0x01
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2005-04-17 05:20:36 +07:00
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/* Select the command latch by setting CLE to high */
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2006-05-24 04:25:53 +07:00
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#define NAND_CLE 0x02
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2005-04-17 05:20:36 +07:00
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/* Select the address latch by setting ALE to high */
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2006-05-24 04:25:53 +07:00
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#define NAND_ALE 0x04
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#define NAND_CTRL_CLE (NAND_NCE | NAND_CLE)
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#define NAND_CTRL_ALE (NAND_NCE | NAND_ALE)
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#define NAND_CTRL_CHANGE 0x80
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2005-04-17 05:20:36 +07:00
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/*
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* Standard NAND flash commands
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*/
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#define NAND_CMD_READ0 0
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#define NAND_CMD_READ1 1
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2006-06-21 01:05:05 +07:00
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#define NAND_CMD_RNDOUT 5
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2005-04-17 05:20:36 +07:00
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#define NAND_CMD_PAGEPROG 0x10
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#define NAND_CMD_READOOB 0x50
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#define NAND_CMD_ERASE1 0x60
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#define NAND_CMD_STATUS 0x70
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#define NAND_CMD_SEQIN 0x80
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2006-06-21 01:05:05 +07:00
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#define NAND_CMD_RNDIN 0x85
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2005-04-17 05:20:36 +07:00
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#define NAND_CMD_READID 0x90
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#define NAND_CMD_ERASE2 0xd0
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2010-08-30 23:32:14 +07:00
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#define NAND_CMD_PARAM 0xec
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2012-09-13 13:57:52 +07:00
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#define NAND_CMD_GET_FEATURES 0xee
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#define NAND_CMD_SET_FEATURES 0xef
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2005-04-17 05:20:36 +07:00
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#define NAND_CMD_RESET 0xff
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2010-02-08 17:20:49 +07:00
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#define NAND_CMD_LOCK 0x2a
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#define NAND_CMD_UNLOCK1 0x23
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#define NAND_CMD_UNLOCK2 0x24
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2005-04-17 05:20:36 +07:00
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/* Extended commands for large page devices */
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#define NAND_CMD_READSTART 0x30
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2006-06-21 01:05:05 +07:00
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#define NAND_CMD_RNDOUTSTART 0xE0
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2005-04-17 05:20:36 +07:00
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#define NAND_CMD_CACHEDPROG 0x15
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2006-05-24 04:25:53 +07:00
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#define NAND_CMD_NONE -1
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2005-04-17 05:20:36 +07:00
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/* Status bits */
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#define NAND_STATUS_FAIL 0x01
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#define NAND_STATUS_FAIL_N1 0x02
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#define NAND_STATUS_TRUE_READY 0x20
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#define NAND_STATUS_READY 0x40
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#define NAND_STATUS_WP 0x80
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2005-11-07 18:15:31 +07:00
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/*
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2005-04-17 05:20:36 +07:00
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* Constants for ECC_MODES
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*/
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2006-05-23 17:00:46 +07:00
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typedef enum {
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NAND_ECC_NONE,
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NAND_ECC_SOFT,
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NAND_ECC_HW,
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NAND_ECC_HW_SYNDROME,
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2009-09-19 02:51:47 +07:00
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NAND_ECC_HW_OOB_FIRST,
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2011-03-11 17:05:33 +07:00
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NAND_ECC_SOFT_BCH,
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2006-05-23 17:00:46 +07:00
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} nand_ecc_modes_t;
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2005-04-17 05:20:36 +07:00
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/*
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* Constants for Hardware ECC
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2005-01-24 10:07:46 +07:00
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*/
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2005-04-17 05:20:36 +07:00
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/* Reset Hardware ECC for read */
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#define NAND_ECC_READ 0
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/* Reset Hardware ECC for write */
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#define NAND_ECC_WRITE 1
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2011-06-24 04:12:08 +07:00
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/* Enable Hardware ECC before syndrome is read back from flash */
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2005-04-17 05:20:36 +07:00
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#define NAND_ECC_READSYN 2
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2005-01-24 10:07:46 +07:00
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/* Bit mask for flags passed to do_nand_read_ecc */
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#define NAND_GET_DEVICE 0x80
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2010-10-05 17:41:01 +07:00
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/*
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* Option constants for bizarre disfunctionality and real
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* features.
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*/
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2011-06-24 04:12:08 +07:00
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/* Buswidth is 16 bit */
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2005-04-17 05:20:36 +07:00
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#define NAND_BUSWIDTH_16 0x00000002
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/* Chip has cache program function */
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#define NAND_CACHEPRG 0x00000008
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2013-03-13 23:51:31 +07:00
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/*
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* Chip requires ready check on read (for auto-incremented sequential read).
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* True only for small page devices; large page devices do not support
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* autoincrement.
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*/
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#define NAND_NEED_READRDY 0x00000100
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2006-09-28 20:38:36 +07:00
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/* Chip does not allow subpage writes */
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#define NAND_NO_SUBPAGE_WRITE 0x00000200
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2010-02-23 01:39:40 +07:00
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/* Device is one of 'new' xD cards that expose fake nand command set */
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#define NAND_BROKEN_XD 0x00000400
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/* Device behaves just like nand, but is readonly */
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#define NAND_ROM 0x00000800
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2012-08-14 04:35:30 +07:00
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/* Device supports subpage reads */
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#define NAND_SUBPAGE_READ 0x00001000
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2005-04-17 05:20:36 +07:00
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/* Options valid for Samsung large page devices */
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2013-03-04 19:56:18 +07:00
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#define NAND_SAMSUNG_LP_OPTIONS NAND_CACHEPRG
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2005-04-17 05:20:36 +07:00
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/* Macros to identify the above */
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#define NAND_HAS_CACHEPROG(chip) ((chip->options & NAND_CACHEPRG))
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2012-08-14 04:35:30 +07:00
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#define NAND_HAS_SUBPAGE_READ(chip) ((chip->options & NAND_SUBPAGE_READ))
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2005-04-17 05:20:36 +07:00
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/* Non chip related options */
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2005-02-09 19:20:00 +07:00
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/* This option skips the bbt scan during initialization. */
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2011-06-01 06:31:26 +07:00
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#define NAND_SKIP_BBTSCAN 0x00010000
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2010-10-05 17:41:01 +07:00
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/*
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* This option is defined if the board driver allocates its own buffers
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* (e.g. because it needs them DMA-coherent).
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*/
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2011-06-01 06:31:26 +07:00
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#define NAND_OWN_BUFFERS 0x00020000
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2009-11-03 01:12:33 +07:00
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/* Chip may not exist, so silence any errors in scan */
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2011-06-01 06:31:26 +07:00
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#define NAND_SCAN_SILENT_NODEV 0x00040000
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2012-11-06 17:51:44 +07:00
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/*
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* Autodetect nand buswidth with readid/onfi.
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* This suppose the driver will configure the hardware in 8 bits mode
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* when calling nand_scan_ident, and update its configuration
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* before calling nand_scan_tail.
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*/
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#define NAND_BUSWIDTH_AUTO 0x00080000
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2009-11-03 01:12:33 +07:00
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2005-04-17 05:20:36 +07:00
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/* Options set by nand scan */
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2006-05-23 16:37:03 +07:00
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/* Nand scan has allocated controller struct */
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2006-05-26 23:52:08 +07:00
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#define NAND_CONTROLLER_ALLOC 0x80000000
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2005-04-17 05:20:36 +07:00
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2006-09-28 20:38:36 +07:00
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/* Cell info constants */
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#define NAND_CI_CHIPNR_MSK 0x03
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#define NAND_CI_CELLTYPE_MSK 0x0C
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2013-09-25 13:58:11 +07:00
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#define NAND_CI_CELLTYPE_SHIFT 2
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2005-04-17 05:20:36 +07:00
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/* Keep gcc happy */
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struct nand_chip;
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2013-05-17 10:17:28 +07:00
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/* ONFI features */
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#define ONFI_FEATURE_16_BIT_BUS (1 << 0)
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#define ONFI_FEATURE_EXT_PARAM_PAGE (1 << 7)
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2012-09-13 13:57:53 +07:00
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/* ONFI timing mode, used in both asynchronous and synchronous mode */
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#define ONFI_TIMING_MODE_0 (1 << 0)
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#define ONFI_TIMING_MODE_1 (1 << 1)
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#define ONFI_TIMING_MODE_2 (1 << 2)
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#define ONFI_TIMING_MODE_3 (1 << 3)
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#define ONFI_TIMING_MODE_4 (1 << 4)
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#define ONFI_TIMING_MODE_5 (1 << 5)
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#define ONFI_TIMING_MODE_UNKNOWN (1 << 6)
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2012-09-13 13:57:52 +07:00
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/* ONFI feature address */
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#define ONFI_FEATURE_ADDR_TIMING_MODE 0x1
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2013-12-04 06:51:09 +07:00
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/* Vendor-specific feature address (Micron) */
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#define ONFI_FEATURE_ADDR_READ_RETRY 0x89
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2012-09-13 13:57:52 +07:00
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/* ONFI subfeature parameters length */
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#define ONFI_SUBFEATURE_PARAM_LEN 4
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2013-05-29 19:30:13 +07:00
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/* ONFI optional commands SET/GET FEATURES supported? */
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#define ONFI_OPT_CMD_SET_GET_FEATURES (1 << 2)
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2010-08-30 23:32:24 +07:00
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struct nand_onfi_params {
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/* rev info and features block */
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2010-10-08 02:48:27 +07:00
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/* 'O' 'N' 'F' 'I' */
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u8 sig[4];
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__le16 revision;
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__le16 features;
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__le16 opt_cmd;
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2013-05-17 10:17:27 +07:00
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u8 reserved0[2];
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__le16 ext_param_page_length; /* since ONFI 2.1 */
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u8 num_of_param_pages; /* since ONFI 2.1 */
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u8 reserved1[17];
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2010-08-30 23:32:24 +07:00
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/* manufacturer information block */
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2010-10-08 02:48:27 +07:00
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char manufacturer[12];
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char model[20];
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u8 jedec_id;
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__le16 date_code;
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u8 reserved2[13];
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2010-08-30 23:32:24 +07:00
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/* memory organization block */
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2010-10-08 02:48:27 +07:00
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__le32 byte_per_page;
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__le16 spare_bytes_per_page;
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__le32 data_bytes_per_ppage;
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__le16 spare_bytes_per_ppage;
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__le32 pages_per_block;
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__le32 blocks_per_lun;
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u8 lun_count;
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u8 addr_cycles;
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u8 bits_per_cell;
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__le16 bb_per_lun;
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__le16 block_endurance;
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u8 guaranteed_good_blocks;
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__le16 guaranteed_block_endurance;
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u8 programs_per_page;
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u8 ppage_attr;
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u8 ecc_bits;
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u8 interleaved_bits;
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u8 interleaved_ops;
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u8 reserved3[13];
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2010-08-30 23:32:24 +07:00
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/* electrical parameter block */
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2010-10-08 02:48:27 +07:00
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u8 io_pin_capacitance_max;
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__le16 async_timing_mode;
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__le16 program_cache_timing_mode;
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__le16 t_prog;
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__le16 t_bers;
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__le16 t_r;
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__le16 t_ccs;
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__le16 src_sync_timing_mode;
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__le16 src_ssync_features;
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__le16 clk_pin_capacitance_typ;
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__le16 io_pin_capacitance_typ;
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__le16 input_pin_capacitance_typ;
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u8 input_pin_capacitance_max;
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2013-12-03 02:12:22 +07:00
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u8 driver_strength_support;
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2010-10-08 02:48:27 +07:00
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__le16 t_int_r;
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__le16 t_ald;
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u8 reserved4[7];
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2010-08-30 23:32:24 +07:00
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/* vendor */
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2013-12-04 03:02:20 +07:00
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__le16 vendor_revision;
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u8 vendor[88];
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2010-08-30 23:32:24 +07:00
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__le16 crc;
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2013-12-06 03:06:54 +07:00
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} __packed;
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2010-08-30 23:32:24 +07:00
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|
|
|
|
|
#define ONFI_CRC_BASE 0x4F4E
|
|
|
|
|
2013-05-17 10:17:27 +07:00
|
|
|
/* Extended ECC information Block Definition (since ONFI 2.1) */
|
|
|
|
struct onfi_ext_ecc_info {
|
|
|
|
u8 ecc_bits;
|
|
|
|
u8 codeword_size;
|
|
|
|
__le16 bb_per_lun;
|
|
|
|
__le16 block_endurance;
|
|
|
|
u8 reserved[2];
|
|
|
|
} __packed;
|
|
|
|
|
|
|
|
#define ONFI_SECTION_TYPE_0 0 /* Unused section. */
|
|
|
|
#define ONFI_SECTION_TYPE_1 1 /* for additional sections. */
|
|
|
|
#define ONFI_SECTION_TYPE_2 2 /* for ECC information. */
|
|
|
|
struct onfi_ext_section {
|
|
|
|
u8 type;
|
|
|
|
u8 length;
|
|
|
|
} __packed;
|
|
|
|
|
|
|
|
#define ONFI_EXT_SECTION_MAX 8
|
|
|
|
|
|
|
|
/* Extended Parameter Page Definition (since ONFI 2.1) */
|
|
|
|
struct onfi_ext_param_page {
|
|
|
|
__le16 crc;
|
|
|
|
u8 sig[4]; /* 'E' 'P' 'P' 'S' */
|
|
|
|
u8 reserved0[10];
|
|
|
|
struct onfi_ext_section sections[ONFI_EXT_SECTION_MAX];
|
|
|
|
|
|
|
|
/*
|
|
|
|
* The actual size of the Extended Parameter Page is in
|
|
|
|
* @ext_param_page_length of nand_onfi_params{}.
|
|
|
|
* The following are the variable length sections.
|
|
|
|
* So we do not add any fields below. Please see the ONFI spec.
|
|
|
|
*/
|
|
|
|
} __packed;
|
|
|
|
|
2013-12-04 03:02:20 +07:00
|
|
|
struct nand_onfi_vendor_micron {
|
|
|
|
u8 two_plane_read;
|
|
|
|
u8 read_cache;
|
|
|
|
u8 read_unique_id;
|
|
|
|
u8 dq_imped;
|
|
|
|
u8 dq_imped_num_settings;
|
|
|
|
u8 dq_imped_feat_addr;
|
|
|
|
u8 rb_pulldown_strength;
|
|
|
|
u8 rb_pulldown_strength_feat_addr;
|
|
|
|
u8 rb_pulldown_strength_num_settings;
|
|
|
|
u8 otp_mode;
|
|
|
|
u8 otp_page_start;
|
|
|
|
u8 otp_data_prot_addr;
|
|
|
|
u8 otp_num_pages;
|
|
|
|
u8 otp_feat_addr;
|
|
|
|
u8 read_retry_options;
|
|
|
|
u8 reserved[72];
|
|
|
|
u8 param_revision;
|
|
|
|
} __packed;
|
|
|
|
|
2014-02-21 12:39:37 +07:00
|
|
|
struct jedec_ecc_info {
|
|
|
|
u8 ecc_bits;
|
|
|
|
u8 codeword_size;
|
|
|
|
__le16 bb_per_lun;
|
|
|
|
__le16 block_endurance;
|
|
|
|
u8 reserved[2];
|
|
|
|
} __packed;
|
|
|
|
|
|
|
|
struct nand_jedec_params {
|
|
|
|
/* rev info and features block */
|
|
|
|
/* 'J' 'E' 'S' 'D' */
|
|
|
|
u8 sig[4];
|
|
|
|
__le16 revision;
|
|
|
|
__le16 features;
|
|
|
|
u8 opt_cmd[3];
|
|
|
|
__le16 sec_cmd;
|
|
|
|
u8 num_of_param_pages;
|
|
|
|
u8 reserved0[18];
|
|
|
|
|
|
|
|
/* manufacturer information block */
|
|
|
|
char manufacturer[12];
|
|
|
|
char model[20];
|
|
|
|
u8 jedec_id[6];
|
|
|
|
u8 reserved1[10];
|
|
|
|
|
|
|
|
/* memory organization block */
|
|
|
|
__le32 byte_per_page;
|
|
|
|
__le16 spare_bytes_per_page;
|
|
|
|
u8 reserved2[6];
|
|
|
|
__le32 pages_per_block;
|
|
|
|
__le32 blocks_per_lun;
|
|
|
|
u8 lun_count;
|
|
|
|
u8 addr_cycles;
|
|
|
|
u8 bits_per_cell;
|
|
|
|
u8 programs_per_page;
|
|
|
|
u8 multi_plane_addr;
|
|
|
|
u8 multi_plane_op_attr;
|
|
|
|
u8 reserved3[38];
|
|
|
|
|
|
|
|
/* electrical parameter block */
|
|
|
|
__le16 async_sdr_speed_grade;
|
|
|
|
__le16 toggle_ddr_speed_grade;
|
|
|
|
__le16 sync_ddr_speed_grade;
|
|
|
|
u8 async_sdr_features;
|
|
|
|
u8 toggle_ddr_features;
|
|
|
|
u8 sync_ddr_features;
|
|
|
|
__le16 t_prog;
|
|
|
|
__le16 t_bers;
|
|
|
|
__le16 t_r;
|
|
|
|
__le16 t_r_multi_plane;
|
|
|
|
__le16 t_ccs;
|
|
|
|
__le16 io_pin_capacitance_typ;
|
|
|
|
__le16 input_pin_capacitance_typ;
|
|
|
|
__le16 clk_pin_capacitance_typ;
|
|
|
|
u8 driver_strength_support;
|
|
|
|
__le16 t_ald;
|
|
|
|
u8 reserved4[36];
|
|
|
|
|
|
|
|
/* ECC and endurance block */
|
|
|
|
u8 guaranteed_good_blocks;
|
|
|
|
__le16 guaranteed_block_endurance;
|
|
|
|
struct jedec_ecc_info ecc_info[4];
|
|
|
|
u8 reserved5[29];
|
|
|
|
|
|
|
|
/* reserved */
|
|
|
|
u8 reserved6[148];
|
|
|
|
|
|
|
|
/* vendor */
|
|
|
|
__le16 vendor_rev_num;
|
|
|
|
u8 reserved7[88];
|
|
|
|
|
|
|
|
/* CRC for Parameter Page */
|
|
|
|
__le16 crc;
|
|
|
|
} __packed;
|
|
|
|
|
2005-04-17 05:20:36 +07:00
|
|
|
/**
|
2006-06-29 11:48:27 +07:00
|
|
|
* struct nand_hw_control - Control structure for hardware controller (e.g ECC generator) shared among independent devices
|
2005-11-07 18:15:31 +07:00
|
|
|
* @lock: protection lock
|
2005-04-17 05:20:36 +07:00
|
|
|
* @active: the mtd device which holds the controller currently
|
2010-10-05 17:41:01 +07:00
|
|
|
* @wq: wait queue to sleep on if a NAND operation is in
|
|
|
|
* progress used instead of the per chip wait queue
|
|
|
|
* when a hw controller is available.
|
2005-04-17 05:20:36 +07:00
|
|
|
*/
|
|
|
|
struct nand_hw_control {
|
2010-10-08 02:48:27 +07:00
|
|
|
spinlock_t lock;
|
2005-04-17 05:20:36 +07:00
|
|
|
struct nand_chip *active;
|
2005-06-01 02:39:20 +07:00
|
|
|
wait_queue_head_t wq;
|
2005-04-17 05:20:36 +07:00
|
|
|
};
|
|
|
|
|
2006-05-23 17:00:46 +07:00
|
|
|
/**
|
2011-06-24 04:12:08 +07:00
|
|
|
* struct nand_ecc_ctrl - Control structure for ECC
|
|
|
|
* @mode: ECC mode
|
|
|
|
* @steps: number of ECC steps per page
|
|
|
|
* @size: data bytes per ECC step
|
|
|
|
* @bytes: ECC bytes per step
|
2012-03-12 04:21:10 +07:00
|
|
|
* @strength: max number of correctible bits per ECC step
|
2011-06-24 04:12:08 +07:00
|
|
|
* @total: total number of ECC bytes per page
|
|
|
|
* @prepad: padding information for syndrome based ECC generators
|
|
|
|
* @postpad: padding information for syndrome based ECC generators
|
2006-06-29 11:48:27 +07:00
|
|
|
* @layout: ECC layout control struct pointer
|
2011-06-24 04:12:08 +07:00
|
|
|
* @priv: pointer to private ECC control data
|
|
|
|
* @hwctl: function to control hardware ECC generator. Must only
|
2006-05-23 17:00:46 +07:00
|
|
|
* be provided if an hardware ECC is available
|
2011-06-24 04:12:08 +07:00
|
|
|
* @calculate: function for ECC calculation or readback from ECC hardware
|
|
|
|
* @correct: function for ECC correction, matching to ECC generator (sw/hw)
|
2006-09-25 23:12:39 +07:00
|
|
|
* @read_page_raw: function to read a raw page without ECC
|
|
|
|
* @write_page_raw: function to write a raw page without ECC
|
2011-06-24 04:12:08 +07:00
|
|
|
* @read_page: function to read a page according to the ECC generator
|
2012-09-11 22:59:03 +07:00
|
|
|
* requirements; returns maximum number of bitflips corrected in
|
|
|
|
* any single ECC step, 0 if bitflips uncorrectable, -EIO hw error
|
|
|
|
* @read_subpage: function to read parts of the page covered by ECC;
|
|
|
|
* returns same as read_page()
|
2013-03-15 19:25:53 +07:00
|
|
|
* @write_subpage: function to write parts of the page covered by ECC.
|
2011-06-24 04:12:08 +07:00
|
|
|
* @write_page: function to write a page according to the ECC generator
|
2010-10-05 17:41:01 +07:00
|
|
|
* requirements.
|
2011-08-31 08:45:37 +07:00
|
|
|
* @write_oob_raw: function to write chip OOB data without ECC
|
2011-08-31 08:45:38 +07:00
|
|
|
* @read_oob_raw: function to read chip OOB data without ECC
|
2006-06-29 11:48:27 +07:00
|
|
|
* @read_oob: function to read chip OOB data
|
|
|
|
* @write_oob: function to write chip OOB data
|
2006-05-23 17:00:46 +07:00
|
|
|
*/
|
|
|
|
struct nand_ecc_ctrl {
|
2010-10-08 02:48:27 +07:00
|
|
|
nand_ecc_modes_t mode;
|
|
|
|
int steps;
|
|
|
|
int size;
|
|
|
|
int bytes;
|
|
|
|
int total;
|
2012-03-12 04:21:10 +07:00
|
|
|
int strength;
|
2010-10-08 02:48:27 +07:00
|
|
|
int prepad;
|
|
|
|
int postpad;
|
2006-05-28 03:16:10 +07:00
|
|
|
struct nand_ecclayout *layout;
|
2011-03-11 17:05:33 +07:00
|
|
|
void *priv;
|
2010-10-08 02:48:27 +07:00
|
|
|
void (*hwctl)(struct mtd_info *mtd, int mode);
|
|
|
|
int (*calculate)(struct mtd_info *mtd, const uint8_t *dat,
|
|
|
|
uint8_t *ecc_code);
|
|
|
|
int (*correct)(struct mtd_info *mtd, uint8_t *dat, uint8_t *read_ecc,
|
|
|
|
uint8_t *calc_ecc);
|
|
|
|
int (*read_page_raw)(struct mtd_info *mtd, struct nand_chip *chip,
|
2012-05-03 00:14:55 +07:00
|
|
|
uint8_t *buf, int oob_required, int page);
|
2012-06-25 17:07:45 +07:00
|
|
|
int (*write_page_raw)(struct mtd_info *mtd, struct nand_chip *chip,
|
2012-05-03 00:14:55 +07:00
|
|
|
const uint8_t *buf, int oob_required);
|
2010-10-08 02:48:27 +07:00
|
|
|
int (*read_page)(struct mtd_info *mtd, struct nand_chip *chip,
|
2012-05-03 00:14:55 +07:00
|
|
|
uint8_t *buf, int oob_required, int page);
|
2010-10-08 02:48:27 +07:00
|
|
|
int (*read_subpage)(struct mtd_info *mtd, struct nand_chip *chip,
|
|
|
|
uint32_t offs, uint32_t len, uint8_t *buf);
|
2013-03-15 19:25:53 +07:00
|
|
|
int (*write_subpage)(struct mtd_info *mtd, struct nand_chip *chip,
|
|
|
|
uint32_t offset, uint32_t data_len,
|
|
|
|
const uint8_t *data_buf, int oob_required);
|
2012-06-25 17:07:45 +07:00
|
|
|
int (*write_page)(struct mtd_info *mtd, struct nand_chip *chip,
|
2012-05-03 00:14:55 +07:00
|
|
|
const uint8_t *buf, int oob_required);
|
2011-08-31 08:45:37 +07:00
|
|
|
int (*write_oob_raw)(struct mtd_info *mtd, struct nand_chip *chip,
|
|
|
|
int page);
|
2011-08-31 08:45:38 +07:00
|
|
|
int (*read_oob_raw)(struct mtd_info *mtd, struct nand_chip *chip,
|
2012-05-09 17:06:35 +07:00
|
|
|
int page);
|
|
|
|
int (*read_oob)(struct mtd_info *mtd, struct nand_chip *chip, int page);
|
2010-10-08 02:48:27 +07:00
|
|
|
int (*write_oob)(struct mtd_info *mtd, struct nand_chip *chip,
|
|
|
|
int page);
|
2006-05-26 23:52:08 +07:00
|
|
|
};
|
|
|
|
|
|
|
|
/**
|
|
|
|
* struct nand_buffers - buffer structure for read/write
|
2014-01-13 13:27:12 +07:00
|
|
|
* @ecccalc: buffer pointer for calculated ECC, size is oobsize.
|
|
|
|
* @ecccode: buffer pointer for ECC read from flash, size is oobsize.
|
|
|
|
* @databuf: buffer pointer for data, size is (page size + oobsize).
|
2006-05-26 23:52:08 +07:00
|
|
|
*
|
|
|
|
* Do not change the order of buffers. databuf and oobrbuf must be in
|
|
|
|
* consecutive order.
|
|
|
|
*/
|
|
|
|
struct nand_buffers {
|
2014-01-13 13:27:12 +07:00
|
|
|
uint8_t *ecccalc;
|
|
|
|
uint8_t *ecccode;
|
|
|
|
uint8_t *databuf;
|
2006-05-23 17:00:46 +07:00
|
|
|
};
|
|
|
|
|
2005-04-17 05:20:36 +07:00
|
|
|
/**
|
|
|
|
* struct nand_chip - NAND Private Flash Chip Data
|
2010-10-05 17:41:01 +07:00
|
|
|
* @IO_ADDR_R: [BOARDSPECIFIC] address to read the 8 I/O lines of the
|
|
|
|
* flash device
|
|
|
|
* @IO_ADDR_W: [BOARDSPECIFIC] address to write the 8 I/O lines of the
|
|
|
|
* flash device.
|
2005-04-17 05:20:36 +07:00
|
|
|
* @read_byte: [REPLACEABLE] read one byte from the chip
|
|
|
|
* @read_word: [REPLACEABLE] read one word from the chip
|
2013-12-06 04:22:04 +07:00
|
|
|
* @write_byte: [REPLACEABLE] write a single byte to the chip on the
|
|
|
|
* low 8 I/O lines
|
2005-04-17 05:20:36 +07:00
|
|
|
* @write_buf: [REPLACEABLE] write data from the buffer to the chip
|
|
|
|
* @read_buf: [REPLACEABLE] read data from the chip into the buffer
|
|
|
|
* @select_chip: [REPLACEABLE] select chip nr
|
2013-04-11 15:34:59 +07:00
|
|
|
* @block_bad: [REPLACEABLE] check if a block is bad, using OOB markers
|
|
|
|
* @block_markbad: [REPLACEABLE] mark a block bad
|
2011-03-31 08:57:33 +07:00
|
|
|
* @cmd_ctrl: [BOARDSPECIFIC] hardwarespecific function for controlling
|
2006-05-24 04:25:53 +07:00
|
|
|
* ALE/CLE/nCE. Also used to write command and address
|
2011-03-31 08:57:33 +07:00
|
|
|
* @init_size: [BOARDSPECIFIC] hardwarespecific function for setting
|
2010-09-27 09:43:53 +07:00
|
|
|
* mtd->oobsize, mtd->writesize and so on.
|
|
|
|
* @id_data contains the 8 bytes values of NAND_CMD_READID.
|
|
|
|
* Return with the bus width.
|
2011-06-24 04:12:08 +07:00
|
|
|
* @dev_ready: [BOARDSPECIFIC] hardwarespecific function for accessing
|
2010-10-05 17:41:01 +07:00
|
|
|
* device ready/busy line. If set to NULL no access to
|
|
|
|
* ready/busy is available and the ready/busy information
|
|
|
|
* is read from the chip status register.
|
|
|
|
* @cmdfunc: [REPLACEABLE] hardwarespecific function for writing
|
|
|
|
* commands to the chip.
|
|
|
|
* @waitfunc: [REPLACEABLE] hardwarespecific function for wait on
|
|
|
|
* ready.
|
mtd: nand: add generic READ RETRY support
Modern MLC (and even SLC?) NAND can experience a large number of
bitflips (beyond the recommended correctability capacity) due to drifts
in the voltage threshold (Vt). These bitflips can cause ECC errors to
occur well within the expected lifetime of the flash. To account for
this, some manufacturers provide a mechanism for shifting the Vt
threshold after a corrupted read.
The generic pattern seems to be that a particular flash has N read retry
modes (where N = 0, traditionally), and after an ECC failure, the host
should reconfigure the flash to use the next available mode, then retry
the read operation. This process repeats until all bitfips can be
corrected or until the host has tried all available retry modes.
This patch adds the infrastructure support for a
vendor-specific/flash-specific callback, used for setting the read-retry
mode (i.e., voltage threshold).
For now, this patch always returns the flash to mode 0 (the default
mode) after a successful read-retry, according to the flowchart found in
Micron's datasheets. This may need to change in the future if it is
determined that eventually, mode 0 is insufficient for the majority of
the flash cells (and so for performance reasons, we should leave the
flash in mode 1, 2, etc.).
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Acked-by: Huang Shijie <b32955@freescale.com>
2014-01-04 06:13:33 +07:00
|
|
|
* @setup_read_retry: [FLASHSPECIFIC] flash (vendor) specific function for
|
|
|
|
* setting the read-retry mode. Mostly needed for MLC NAND.
|
2011-06-24 04:12:08 +07:00
|
|
|
* @ecc: [BOARDSPECIFIC] ECC control structure
|
2006-06-29 11:48:27 +07:00
|
|
|
* @buffers: buffer structure for read/write
|
|
|
|
* @hwcontrol: platform-specific hardware control structure
|
2010-10-05 17:41:01 +07:00
|
|
|
* @erase_cmd: [INTERN] erase command write function, selectable due
|
|
|
|
* to AND support.
|
2005-04-17 05:20:36 +07:00
|
|
|
* @scan_bbt: [REPLACEABLE] function to scan bad block table
|
2011-03-31 08:57:33 +07:00
|
|
|
* @chip_delay: [BOARDSPECIFIC] chip dependent delay for transferring
|
2010-10-05 17:41:01 +07:00
|
|
|
* data from array to read regs (tR).
|
2006-05-23 16:50:56 +07:00
|
|
|
* @state: [INTERN] the current state of the NAND device
|
2011-08-31 08:45:43 +07:00
|
|
|
* @oob_poi: "poison value buffer," used for laying out OOB data
|
|
|
|
* before writing
|
2010-10-05 17:41:01 +07:00
|
|
|
* @page_shift: [INTERN] number of address bits in a page (column
|
|
|
|
* address bits).
|
2005-04-17 05:20:36 +07:00
|
|
|
* @phys_erase_shift: [INTERN] number of address bits in a physical eraseblock
|
|
|
|
* @bbt_erase_shift: [INTERN] number of address bits in a bbt entry
|
|
|
|
* @chip_shift: [INTERN] number of address bits in one chip
|
2010-10-05 17:41:01 +07:00
|
|
|
* @options: [BOARDSPECIFIC] various chip options. They can partly
|
|
|
|
* be set to inform nand_scan about special functionality.
|
|
|
|
* See the defines for further explanation.
|
2011-06-01 06:31:21 +07:00
|
|
|
* @bbt_options: [INTERN] bad block specific options. All options used
|
|
|
|
* here must come from bbm.h. By default, these options
|
|
|
|
* will be copied to the appropriate nand_bbt_descr's.
|
2010-10-05 17:41:01 +07:00
|
|
|
* @badblockpos: [INTERN] position of the bad block marker in the oob
|
|
|
|
* area.
|
2012-01-14 09:11:50 +07:00
|
|
|
* @badblockbits: [INTERN] minimum number of set bits in a good block's
|
|
|
|
* bad block marker position; i.e., BBM == 11110111b is
|
|
|
|
* not bad when badblockbits == 7
|
2013-09-25 13:58:11 +07:00
|
|
|
* @bits_per_cell: [INTERN] number of bits per cell. i.e., 1 means SLC.
|
2013-05-17 10:17:25 +07:00
|
|
|
* @ecc_strength_ds: [INTERN] ECC correctability from the datasheet.
|
|
|
|
* Minimum amount of bit errors per @ecc_step_ds guaranteed
|
|
|
|
* to be correctable. If unknown, set to zero.
|
|
|
|
* @ecc_step_ds: [INTERN] ECC step required by the @ecc_strength_ds,
|
|
|
|
* also from the datasheet. It is the recommended ECC step
|
|
|
|
* size, if known; if unknown, set to zero.
|
2005-04-17 05:20:36 +07:00
|
|
|
* @numchips: [INTERN] number of physical chips
|
|
|
|
* @chipsize: [INTERN] the size of one chip for multichip arrays
|
|
|
|
* @pagemask: [INTERN] page number mask = number of (pages / chip) - 1
|
2010-10-05 17:41:01 +07:00
|
|
|
* @pagebuf: [INTERN] holds the pagenumber which is currently in
|
|
|
|
* data_buf.
|
2012-04-26 02:06:11 +07:00
|
|
|
* @pagebuf_bitflips: [INTERN] holds the bitflip count for the page which is
|
|
|
|
* currently in data_buf.
|
2006-09-28 20:38:36 +07:00
|
|
|
* @subpagesize: [INTERN] holds the subpagesize
|
2010-10-05 17:41:01 +07:00
|
|
|
* @onfi_version: [INTERN] holds the chip ONFI version (BCD encoded),
|
|
|
|
* non 0 if ONFI supported.
|
2014-02-21 12:39:38 +07:00
|
|
|
* @jedec_version: [INTERN] holds the chip JEDEC version (BCD encoded),
|
|
|
|
* non 0 if JEDEC supported.
|
2010-10-05 17:41:01 +07:00
|
|
|
* @onfi_params: [INTERN] holds the ONFI page parameter when ONFI is
|
|
|
|
* supported, 0 otherwise.
|
2014-02-21 12:39:38 +07:00
|
|
|
* @jedec_params: [INTERN] holds the JEDEC parameter page when JEDEC is
|
|
|
|
* supported, 0 otherwise.
|
mtd: nand: add generic READ RETRY support
Modern MLC (and even SLC?) NAND can experience a large number of
bitflips (beyond the recommended correctability capacity) due to drifts
in the voltage threshold (Vt). These bitflips can cause ECC errors to
occur well within the expected lifetime of the flash. To account for
this, some manufacturers provide a mechanism for shifting the Vt
threshold after a corrupted read.
The generic pattern seems to be that a particular flash has N read retry
modes (where N = 0, traditionally), and after an ECC failure, the host
should reconfigure the flash to use the next available mode, then retry
the read operation. This process repeats until all bitfips can be
corrected or until the host has tried all available retry modes.
This patch adds the infrastructure support for a
vendor-specific/flash-specific callback, used for setting the read-retry
mode (i.e., voltage threshold).
For now, this patch always returns the flash to mode 0 (the default
mode) after a successful read-retry, according to the flowchart found in
Micron's datasheets. This may need to change in the future if it is
determined that eventually, mode 0 is insufficient for the majority of
the flash cells (and so for performance reasons, we should leave the
flash in mode 1, 2, etc.).
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Acked-by: Huang Shijie <b32955@freescale.com>
2014-01-04 06:13:33 +07:00
|
|
|
* @read_retries: [INTERN] the number of read retry modes supported
|
2012-10-25 20:43:10 +07:00
|
|
|
* @onfi_set_features: [REPLACEABLE] set the features for ONFI nand
|
|
|
|
* @onfi_get_features: [REPLACEABLE] get the features for ONFI nand
|
2005-04-17 05:20:36 +07:00
|
|
|
* @bbt: [INTERN] bad block table pointer
|
2010-10-05 17:41:01 +07:00
|
|
|
* @bbt_td: [REPLACEABLE] bad block table descriptor for flash
|
|
|
|
* lookup.
|
2005-04-17 05:20:36 +07:00
|
|
|
* @bbt_md: [REPLACEABLE] bad block table mirror descriptor
|
2010-10-05 17:41:01 +07:00
|
|
|
* @badblock_pattern: [REPLACEABLE] bad block scan pattern used for initial
|
|
|
|
* bad block scan.
|
|
|
|
* @controller: [REPLACEABLE] a pointer to a hardware controller
|
2011-06-24 04:12:08 +07:00
|
|
|
* structure which is shared among multiple independent
|
2010-10-05 17:41:01 +07:00
|
|
|
* devices.
|
2011-08-24 07:17:35 +07:00
|
|
|
* @priv: [OPTIONAL] pointer to private chip data
|
2010-10-05 17:41:01 +07:00
|
|
|
* @errstat: [OPTIONAL] hardware specific function to perform
|
|
|
|
* additional error status checks (determine if errors are
|
|
|
|
* correctable).
|
2006-10-30 13:46:40 +07:00
|
|
|
* @write_page: [REPLACEABLE] High-level page write function
|
2005-04-17 05:20:36 +07:00
|
|
|
*/
|
2005-11-07 18:15:31 +07:00
|
|
|
|
2005-04-17 05:20:36 +07:00
|
|
|
struct nand_chip {
|
2010-10-08 02:48:27 +07:00
|
|
|
void __iomem *IO_ADDR_R;
|
|
|
|
void __iomem *IO_ADDR_W;
|
|
|
|
|
|
|
|
uint8_t (*read_byte)(struct mtd_info *mtd);
|
|
|
|
u16 (*read_word)(struct mtd_info *mtd);
|
2013-12-06 04:22:04 +07:00
|
|
|
void (*write_byte)(struct mtd_info *mtd, uint8_t byte);
|
2010-10-08 02:48:27 +07:00
|
|
|
void (*write_buf)(struct mtd_info *mtd, const uint8_t *buf, int len);
|
|
|
|
void (*read_buf)(struct mtd_info *mtd, uint8_t *buf, int len);
|
|
|
|
void (*select_chip)(struct mtd_info *mtd, int chip);
|
|
|
|
int (*block_bad)(struct mtd_info *mtd, loff_t ofs, int getchip);
|
|
|
|
int (*block_markbad)(struct mtd_info *mtd, loff_t ofs);
|
|
|
|
void (*cmd_ctrl)(struct mtd_info *mtd, int dat, unsigned int ctrl);
|
|
|
|
int (*init_size)(struct mtd_info *mtd, struct nand_chip *this,
|
|
|
|
u8 *id_data);
|
|
|
|
int (*dev_ready)(struct mtd_info *mtd);
|
|
|
|
void (*cmdfunc)(struct mtd_info *mtd, unsigned command, int column,
|
|
|
|
int page_addr);
|
|
|
|
int(*waitfunc)(struct mtd_info *mtd, struct nand_chip *this);
|
|
|
|
void (*erase_cmd)(struct mtd_info *mtd, int page);
|
|
|
|
int (*scan_bbt)(struct mtd_info *mtd);
|
|
|
|
int (*errstat)(struct mtd_info *mtd, struct nand_chip *this, int state,
|
|
|
|
int status, int page);
|
|
|
|
int (*write_page)(struct mtd_info *mtd, struct nand_chip *chip,
|
2013-03-15 19:25:53 +07:00
|
|
|
uint32_t offset, int data_len, const uint8_t *buf,
|
|
|
|
int oob_required, int page, int cached, int raw);
|
2012-09-13 13:57:52 +07:00
|
|
|
int (*onfi_set_features)(struct mtd_info *mtd, struct nand_chip *chip,
|
|
|
|
int feature_addr, uint8_t *subfeature_para);
|
|
|
|
int (*onfi_get_features)(struct mtd_info *mtd, struct nand_chip *chip,
|
|
|
|
int feature_addr, uint8_t *subfeature_para);
|
mtd: nand: add generic READ RETRY support
Modern MLC (and even SLC?) NAND can experience a large number of
bitflips (beyond the recommended correctability capacity) due to drifts
in the voltage threshold (Vt). These bitflips can cause ECC errors to
occur well within the expected lifetime of the flash. To account for
this, some manufacturers provide a mechanism for shifting the Vt
threshold after a corrupted read.
The generic pattern seems to be that a particular flash has N read retry
modes (where N = 0, traditionally), and after an ECC failure, the host
should reconfigure the flash to use the next available mode, then retry
the read operation. This process repeats until all bitfips can be
corrected or until the host has tried all available retry modes.
This patch adds the infrastructure support for a
vendor-specific/flash-specific callback, used for setting the read-retry
mode (i.e., voltage threshold).
For now, this patch always returns the flash to mode 0 (the default
mode) after a successful read-retry, according to the flowchart found in
Micron's datasheets. This may need to change in the future if it is
determined that eventually, mode 0 is insufficient for the majority of
the flash cells (and so for performance reasons, we should leave the
flash in mode 1, 2, etc.).
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Acked-by: Huang Shijie <b32955@freescale.com>
2014-01-04 06:13:33 +07:00
|
|
|
int (*setup_read_retry)(struct mtd_info *mtd, int retry_mode);
|
2010-10-08 02:48:27 +07:00
|
|
|
|
|
|
|
int chip_delay;
|
|
|
|
unsigned int options;
|
2011-06-01 06:31:21 +07:00
|
|
|
unsigned int bbt_options;
|
2010-10-08 02:48:27 +07:00
|
|
|
|
|
|
|
int page_shift;
|
|
|
|
int phys_erase_shift;
|
|
|
|
int bbt_erase_shift;
|
|
|
|
int chip_shift;
|
|
|
|
int numchips;
|
|
|
|
uint64_t chipsize;
|
|
|
|
int pagemask;
|
|
|
|
int pagebuf;
|
2012-04-26 02:06:11 +07:00
|
|
|
unsigned int pagebuf_bitflips;
|
2010-10-08 02:48:27 +07:00
|
|
|
int subpagesize;
|
2013-09-25 13:58:11 +07:00
|
|
|
uint8_t bits_per_cell;
|
2013-05-17 10:17:25 +07:00
|
|
|
uint16_t ecc_strength_ds;
|
|
|
|
uint16_t ecc_step_ds;
|
2010-10-08 02:48:27 +07:00
|
|
|
int badblockpos;
|
|
|
|
int badblockbits;
|
|
|
|
|
|
|
|
int onfi_version;
|
2014-02-21 12:39:38 +07:00
|
|
|
int jedec_version;
|
|
|
|
union {
|
|
|
|
struct nand_onfi_params onfi_params;
|
|
|
|
struct nand_jedec_params jedec_params;
|
|
|
|
};
|
2010-08-30 23:32:24 +07:00
|
|
|
|
mtd: nand: add generic READ RETRY support
Modern MLC (and even SLC?) NAND can experience a large number of
bitflips (beyond the recommended correctability capacity) due to drifts
in the voltage threshold (Vt). These bitflips can cause ECC errors to
occur well within the expected lifetime of the flash. To account for
this, some manufacturers provide a mechanism for shifting the Vt
threshold after a corrupted read.
The generic pattern seems to be that a particular flash has N read retry
modes (where N = 0, traditionally), and after an ECC failure, the host
should reconfigure the flash to use the next available mode, then retry
the read operation. This process repeats until all bitfips can be
corrected or until the host has tried all available retry modes.
This patch adds the infrastructure support for a
vendor-specific/flash-specific callback, used for setting the read-retry
mode (i.e., voltage threshold).
For now, this patch always returns the flash to mode 0 (the default
mode) after a successful read-retry, according to the flowchart found in
Micron's datasheets. This may need to change in the future if it is
determined that eventually, mode 0 is insufficient for the majority of
the flash cells (and so for performance reasons, we should leave the
flash in mode 1, 2, etc.).
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Acked-by: Huang Shijie <b32955@freescale.com>
2014-01-04 06:13:33 +07:00
|
|
|
int read_retries;
|
|
|
|
|
2010-10-08 02:48:27 +07:00
|
|
|
flstate_t state;
|
2006-05-26 23:52:08 +07:00
|
|
|
|
2010-10-08 02:48:27 +07:00
|
|
|
uint8_t *oob_poi;
|
|
|
|
struct nand_hw_control *controller;
|
2006-05-26 23:52:08 +07:00
|
|
|
|
|
|
|
struct nand_ecc_ctrl ecc;
|
2006-09-25 23:08:04 +07:00
|
|
|
struct nand_buffers *buffers;
|
2006-05-26 23:52:08 +07:00
|
|
|
struct nand_hw_control hwcontrol;
|
|
|
|
|
2010-10-08 02:48:27 +07:00
|
|
|
uint8_t *bbt;
|
|
|
|
struct nand_bbt_descr *bbt_td;
|
|
|
|
struct nand_bbt_descr *bbt_md;
|
2006-05-26 23:52:08 +07:00
|
|
|
|
2010-10-08 02:48:27 +07:00
|
|
|
struct nand_bbt_descr *badblock_pattern;
|
2006-05-26 23:52:08 +07:00
|
|
|
|
2010-10-08 02:48:27 +07:00
|
|
|
void *priv;
|
2005-04-17 05:20:36 +07:00
|
|
|
};
|
|
|
|
|
|
|
|
/*
|
|
|
|
* NAND Flash Manufacturer ID Codes
|
|
|
|
*/
|
|
|
|
#define NAND_MFR_TOSHIBA 0x98
|
|
|
|
#define NAND_MFR_SAMSUNG 0xec
|
|
|
|
#define NAND_MFR_FUJITSU 0x04
|
|
|
|
#define NAND_MFR_NATIONAL 0x8f
|
|
|
|
#define NAND_MFR_RENESAS 0x07
|
|
|
|
#define NAND_MFR_STMICRO 0x20
|
2006-05-23 16:50:56 +07:00
|
|
|
#define NAND_MFR_HYNIX 0xad
|
2007-03-22 08:48:02 +07:00
|
|
|
#define NAND_MFR_MICRON 0x2c
|
2007-07-19 11:29:46 +07:00
|
|
|
#define NAND_MFR_AMD 0x01
|
2011-11-03 03:34:42 +07:00
|
|
|
#define NAND_MFR_MACRONIX 0xc2
|
2012-05-22 21:30:47 +07:00
|
|
|
#define NAND_MFR_EON 0x92
|
2013-12-26 14:37:45 +07:00
|
|
|
#define NAND_MFR_SANDISK 0x45
|
2014-01-03 15:50:39 +07:00
|
|
|
#define NAND_MFR_INTEL 0x89
|
2005-04-17 05:20:36 +07:00
|
|
|
|
2013-03-14 14:57:23 +07:00
|
|
|
/* The maximum expected count of bytes in the NAND ID sequence */
|
|
|
|
#define NAND_MAX_ID_LEN 8
|
|
|
|
|
2013-03-04 20:39:18 +07:00
|
|
|
/*
|
|
|
|
* A helper for defining older NAND chips where the second ID byte fully
|
|
|
|
* defined the chip, including the geometry (chip size, eraseblock size, page
|
2013-03-19 15:29:26 +07:00
|
|
|
* size). All these chips have 512 bytes NAND page size.
|
2013-03-04 20:39:18 +07:00
|
|
|
*/
|
2013-03-19 15:29:26 +07:00
|
|
|
#define LEGACY_ID_NAND(nm, devid, chipsz, erasesz, opts) \
|
|
|
|
{ .name = (nm), {{ .dev_id = (devid) }}, .pagesize = 512, \
|
|
|
|
.chipsize = (chipsz), .erasesize = (erasesz), .options = (opts) }
|
2013-03-04 20:39:18 +07:00
|
|
|
|
|
|
|
/*
|
|
|
|
* A helper for defining newer chips which report their page size and
|
|
|
|
* eraseblock size via the extended ID bytes.
|
|
|
|
*
|
|
|
|
* The real difference between LEGACY_ID_NAND and EXTENDED_ID_NAND is that with
|
|
|
|
* EXTENDED_ID_NAND, manufacturers overloaded the same device ID so that the
|
|
|
|
* device ID now only represented a particular total chip size (and voltage,
|
|
|
|
* buswidth), and the page size, eraseblock size, and OOB size could vary while
|
|
|
|
* using the same device ID.
|
|
|
|
*/
|
mtd: nand: provision full ID support
Up until now we identified NAND chips by the 'device ID' part of the full chip
ID array, which is the second full ID array byte. However, the newest flashes
use the same device ID for chips with identical page and eraseblock sizes, but
different OOB sizes. And unfortunately, it is not clear if there is a
"standard" way to fetch the OOB size from chip's full ID array. Here is an
example:
Toshiba TC58NVG2S0F: 0x98, 0xdc, 0x90, 0x26, 0x76, 0x15, 0x01, 0x08
Toshiba TC58NVG3S0F: 0x98, 0xd3, 0x90, 0x26, 0x76, 0x15, 0x02, 0x08
The first one is a 512MiB NAND chip with 4KiB NAND pages, 256KiB eraseblock
size and 224 bytes OOB. The second one is a 1GiB NAND chip with the same page
and eraseblock sizes, but with 232 bytes OOB.
This means that we have to store full ID in our NAND flashes table in order to
distinguish between these 2.
This patch adds the 'id[8]' field to the 'struct nand_flash_dev' structure, and
it makes it to be a part of anonymous union, where the second member is a
structure containing the 'mfr_id' and 'dev_id' bytes. The union makes sure that
'mfr_id' refers the same RAM address as 'id[0]' and 'dev_id' refers the same
RAM address as 'id[1]'. The only motivation for the union is an assumption that
'type->dev_id' is more readable than 'type->id[1]'.
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
2013-03-04 21:26:56 +07:00
|
|
|
#define EXTENDED_ID_NAND(nm, devid, chipsz, opts) \
|
|
|
|
{ .name = (nm), {{ .dev_id = (devid) }}, .chipsize = (chipsz), \
|
2013-03-04 20:39:18 +07:00
|
|
|
.options = (opts) }
|
|
|
|
|
2013-05-17 10:17:31 +07:00
|
|
|
#define NAND_ECC_INFO(_strength, _step) \
|
|
|
|
{ .strength_ds = (_strength), .step_ds = (_step) }
|
|
|
|
#define NAND_ECC_STRENGTH(type) ((type)->ecc.strength_ds)
|
|
|
|
#define NAND_ECC_STEP(type) ((type)->ecc.step_ds)
|
|
|
|
|
2005-04-17 05:20:36 +07:00
|
|
|
/**
|
|
|
|
* struct nand_flash_dev - NAND Flash Device ID Structure
|
2013-03-04 21:05:00 +07:00
|
|
|
* @name: a human-readable name of the NAND chip
|
|
|
|
* @dev_id: the device ID (the second byte of the full chip ID array)
|
mtd: nand: provision full ID support
Up until now we identified NAND chips by the 'device ID' part of the full chip
ID array, which is the second full ID array byte. However, the newest flashes
use the same device ID for chips with identical page and eraseblock sizes, but
different OOB sizes. And unfortunately, it is not clear if there is a
"standard" way to fetch the OOB size from chip's full ID array. Here is an
example:
Toshiba TC58NVG2S0F: 0x98, 0xdc, 0x90, 0x26, 0x76, 0x15, 0x01, 0x08
Toshiba TC58NVG3S0F: 0x98, 0xd3, 0x90, 0x26, 0x76, 0x15, 0x02, 0x08
The first one is a 512MiB NAND chip with 4KiB NAND pages, 256KiB eraseblock
size and 224 bytes OOB. The second one is a 1GiB NAND chip with the same page
and eraseblock sizes, but with 232 bytes OOB.
This means that we have to store full ID in our NAND flashes table in order to
distinguish between these 2.
This patch adds the 'id[8]' field to the 'struct nand_flash_dev' structure, and
it makes it to be a part of anonymous union, where the second member is a
structure containing the 'mfr_id' and 'dev_id' bytes. The union makes sure that
'mfr_id' refers the same RAM address as 'id[0]' and 'dev_id' refers the same
RAM address as 'id[1]'. The only motivation for the union is an assumption that
'type->dev_id' is more readable than 'type->id[1]'.
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
2013-03-04 21:26:56 +07:00
|
|
|
* @mfr_id: manufecturer ID part of the full chip ID array (refers the same
|
|
|
|
* memory address as @id[0])
|
|
|
|
* @dev_id: device ID part of the full chip ID array (refers the same memory
|
|
|
|
* address as @id[1])
|
|
|
|
* @id: full device ID array
|
2013-03-04 21:05:00 +07:00
|
|
|
* @pagesize: size of the NAND page in bytes; if 0, then the real page size (as
|
|
|
|
* well as the eraseblock size) is determined from the extended NAND
|
|
|
|
* chip ID array)
|
|
|
|
* @chipsize: total chip size in MiB
|
2013-03-13 18:45:00 +07:00
|
|
|
* @erasesize: eraseblock size in bytes (determined from the extended ID if 0)
|
2013-03-04 21:05:00 +07:00
|
|
|
* @options: stores various chip bit options
|
2013-03-15 10:00:59 +07:00
|
|
|
* @id_len: The valid length of the @id.
|
|
|
|
* @oobsize: OOB size
|
2013-05-17 10:17:31 +07:00
|
|
|
* @ecc.strength_ds: The ECC correctability from the datasheet, same as the
|
|
|
|
* @ecc_strength_ds in nand_chip{}.
|
|
|
|
* @ecc.step_ds: The ECC step required by the @ecc.strength_ds, same as the
|
|
|
|
* @ecc_step_ds in nand_chip{}, also from the datasheet.
|
|
|
|
* For example, the "4bit ECC for each 512Byte" can be set with
|
|
|
|
* NAND_ECC_INFO(4, 512).
|
2005-04-17 05:20:36 +07:00
|
|
|
*/
|
|
|
|
struct nand_flash_dev {
|
|
|
|
char *name;
|
mtd: nand: provision full ID support
Up until now we identified NAND chips by the 'device ID' part of the full chip
ID array, which is the second full ID array byte. However, the newest flashes
use the same device ID for chips with identical page and eraseblock sizes, but
different OOB sizes. And unfortunately, it is not clear if there is a
"standard" way to fetch the OOB size from chip's full ID array. Here is an
example:
Toshiba TC58NVG2S0F: 0x98, 0xdc, 0x90, 0x26, 0x76, 0x15, 0x01, 0x08
Toshiba TC58NVG3S0F: 0x98, 0xd3, 0x90, 0x26, 0x76, 0x15, 0x02, 0x08
The first one is a 512MiB NAND chip with 4KiB NAND pages, 256KiB eraseblock
size and 224 bytes OOB. The second one is a 1GiB NAND chip with the same page
and eraseblock sizes, but with 232 bytes OOB.
This means that we have to store full ID in our NAND flashes table in order to
distinguish between these 2.
This patch adds the 'id[8]' field to the 'struct nand_flash_dev' structure, and
it makes it to be a part of anonymous union, where the second member is a
structure containing the 'mfr_id' and 'dev_id' bytes. The union makes sure that
'mfr_id' refers the same RAM address as 'id[0]' and 'dev_id' refers the same
RAM address as 'id[1]'. The only motivation for the union is an assumption that
'type->dev_id' is more readable than 'type->id[1]'.
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
2013-03-04 21:26:56 +07:00
|
|
|
union {
|
|
|
|
struct {
|
|
|
|
uint8_t mfr_id;
|
|
|
|
uint8_t dev_id;
|
|
|
|
};
|
2013-03-14 14:57:23 +07:00
|
|
|
uint8_t id[NAND_MAX_ID_LEN];
|
mtd: nand: provision full ID support
Up until now we identified NAND chips by the 'device ID' part of the full chip
ID array, which is the second full ID array byte. However, the newest flashes
use the same device ID for chips with identical page and eraseblock sizes, but
different OOB sizes. And unfortunately, it is not clear if there is a
"standard" way to fetch the OOB size from chip's full ID array. Here is an
example:
Toshiba TC58NVG2S0F: 0x98, 0xdc, 0x90, 0x26, 0x76, 0x15, 0x01, 0x08
Toshiba TC58NVG3S0F: 0x98, 0xd3, 0x90, 0x26, 0x76, 0x15, 0x02, 0x08
The first one is a 512MiB NAND chip with 4KiB NAND pages, 256KiB eraseblock
size and 224 bytes OOB. The second one is a 1GiB NAND chip with the same page
and eraseblock sizes, but with 232 bytes OOB.
This means that we have to store full ID in our NAND flashes table in order to
distinguish between these 2.
This patch adds the 'id[8]' field to the 'struct nand_flash_dev' structure, and
it makes it to be a part of anonymous union, where the second member is a
structure containing the 'mfr_id' and 'dev_id' bytes. The union makes sure that
'mfr_id' refers the same RAM address as 'id[0]' and 'dev_id' refers the same
RAM address as 'id[1]'. The only motivation for the union is an assumption that
'type->dev_id' is more readable than 'type->id[1]'.
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
2013-03-04 21:26:56 +07:00
|
|
|
};
|
2013-03-13 18:45:00 +07:00
|
|
|
unsigned int pagesize;
|
|
|
|
unsigned int chipsize;
|
|
|
|
unsigned int erasesize;
|
|
|
|
unsigned int options;
|
2013-03-15 10:00:59 +07:00
|
|
|
uint16_t id_len;
|
|
|
|
uint16_t oobsize;
|
2013-05-17 10:17:31 +07:00
|
|
|
struct {
|
|
|
|
uint16_t strength_ds;
|
|
|
|
uint16_t step_ds;
|
|
|
|
} ecc;
|
2005-04-17 05:20:36 +07:00
|
|
|
};
|
|
|
|
|
|
|
|
/**
|
|
|
|
* struct nand_manufacturers - NAND Flash Manufacturer ID Structure
|
|
|
|
* @name: Manufacturer name
|
2006-05-23 16:50:56 +07:00
|
|
|
* @id: manufacturer ID code of device.
|
2005-04-17 05:20:36 +07:00
|
|
|
*/
|
|
|
|
struct nand_manufacturers {
|
|
|
|
int id;
|
2010-10-05 17:41:01 +07:00
|
|
|
char *name;
|
2005-04-17 05:20:36 +07:00
|
|
|
};
|
|
|
|
|
|
|
|
extern struct nand_flash_dev nand_flash_ids[];
|
|
|
|
extern struct nand_manufacturers nand_manuf_ids[];
|
|
|
|
|
2006-05-25 15:07:16 +07:00
|
|
|
extern int nand_scan_bbt(struct mtd_info *mtd, struct nand_bbt_descr *bd);
|
|
|
|
extern int nand_default_bbt(struct mtd_info *mtd);
|
2013-07-31 07:52:59 +07:00
|
|
|
extern int nand_markbad_bbt(struct mtd_info *mtd, loff_t offs);
|
2006-05-25 15:07:16 +07:00
|
|
|
extern int nand_isbad_bbt(struct mtd_info *mtd, loff_t offs, int allowbbt);
|
|
|
|
extern int nand_erase_nand(struct mtd_info *mtd, struct erase_info *instr,
|
|
|
|
int allowbbt);
|
|
|
|
extern int nand_do_read(struct mtd_info *mtd, loff_t from, size_t len,
|
2010-10-05 17:41:01 +07:00
|
|
|
size_t *retlen, uint8_t *buf);
|
2005-04-17 05:20:36 +07:00
|
|
|
|
2006-05-23 16:38:59 +07:00
|
|
|
/**
|
|
|
|
* struct platform_nand_chip - chip level device structure
|
|
|
|
* @nr_chips: max. number of chips to scan for
|
2006-06-29 11:48:27 +07:00
|
|
|
* @chip_offset: chip number offset
|
2006-05-28 01:05:26 +07:00
|
|
|
* @nr_partitions: number of partitions pointed to by partitions (or zero)
|
2006-05-23 16:38:59 +07:00
|
|
|
* @partitions: mtd partition list
|
|
|
|
* @chip_delay: R/B delay value in us
|
|
|
|
* @options: Option flags, e.g. 16bit buswidth
|
2011-06-01 06:31:22 +07:00
|
|
|
* @bbt_options: BBT option flags, e.g. NAND_BBT_USE_FLASH
|
2011-06-24 04:12:08 +07:00
|
|
|
* @ecclayout: ECC layout info structure
|
2007-05-06 21:46:57 +07:00
|
|
|
* @part_probe_types: NULL-terminated array of probe types
|
2006-05-23 16:38:59 +07:00
|
|
|
*/
|
|
|
|
struct platform_nand_chip {
|
2010-10-08 02:48:27 +07:00
|
|
|
int nr_chips;
|
|
|
|
int chip_offset;
|
|
|
|
int nr_partitions;
|
|
|
|
struct mtd_partition *partitions;
|
|
|
|
struct nand_ecclayout *ecclayout;
|
|
|
|
int chip_delay;
|
|
|
|
unsigned int options;
|
2011-06-01 06:31:22 +07:00
|
|
|
unsigned int bbt_options;
|
2010-10-08 02:48:27 +07:00
|
|
|
const char **part_probe_types;
|
2006-05-23 16:38:59 +07:00
|
|
|
};
|
|
|
|
|
2009-05-13 03:46:58 +07:00
|
|
|
/* Keep gcc happy */
|
|
|
|
struct platform_device;
|
|
|
|
|
2006-05-23 16:38:59 +07:00
|
|
|
/**
|
|
|
|
* struct platform_nand_ctrl - controller level device structure
|
2009-05-13 03:46:58 +07:00
|
|
|
* @probe: platform specific function to probe/setup hardware
|
|
|
|
* @remove: platform specific function to remove/teardown hardware
|
2006-05-23 16:38:59 +07:00
|
|
|
* @hwcontrol: platform specific hardware control structure
|
|
|
|
* @dev_ready: platform specific function to read ready/busy pin
|
|
|
|
* @select_chip: platform specific chip select function
|
2007-05-06 21:46:57 +07:00
|
|
|
* @cmd_ctrl: platform specific function for controlling
|
|
|
|
* ALE/CLE/nCE. Also used to write command and address
|
2009-05-12 01:28:01 +07:00
|
|
|
* @write_buf: platform specific function for write buffer
|
|
|
|
* @read_buf: platform specific function for read buffer
|
2012-08-19 07:41:35 +07:00
|
|
|
* @read_byte: platform specific function to read one byte from chip
|
2006-06-29 11:48:27 +07:00
|
|
|
* @priv: private data to transport driver specific settings
|
2006-05-23 16:38:59 +07:00
|
|
|
*
|
|
|
|
* All fields are optional and depend on the hardware driver requirements
|
|
|
|
*/
|
|
|
|
struct platform_nand_ctrl {
|
2010-10-08 02:48:27 +07:00
|
|
|
int (*probe)(struct platform_device *pdev);
|
|
|
|
void (*remove)(struct platform_device *pdev);
|
|
|
|
void (*hwcontrol)(struct mtd_info *mtd, int cmd);
|
|
|
|
int (*dev_ready)(struct mtd_info *mtd);
|
|
|
|
void (*select_chip)(struct mtd_info *mtd, int chip);
|
|
|
|
void (*cmd_ctrl)(struct mtd_info *mtd, int dat, unsigned int ctrl);
|
|
|
|
void (*write_buf)(struct mtd_info *mtd, const uint8_t *buf, int len);
|
|
|
|
void (*read_buf)(struct mtd_info *mtd, uint8_t *buf, int len);
|
2012-05-01 00:30:47 +07:00
|
|
|
unsigned char (*read_byte)(struct mtd_info *mtd);
|
2010-10-08 02:48:27 +07:00
|
|
|
void *priv;
|
2006-05-23 16:38:59 +07:00
|
|
|
};
|
|
|
|
|
2007-05-06 21:46:57 +07:00
|
|
|
/**
|
|
|
|
* struct platform_nand_data - container structure for platform-specific data
|
|
|
|
* @chip: chip level chip structure
|
|
|
|
* @ctrl: controller level device structure
|
|
|
|
*/
|
|
|
|
struct platform_nand_data {
|
2010-10-08 02:48:27 +07:00
|
|
|
struct platform_nand_chip chip;
|
|
|
|
struct platform_nand_ctrl ctrl;
|
2007-05-06 21:46:57 +07:00
|
|
|
};
|
|
|
|
|
2006-05-23 16:38:59 +07:00
|
|
|
/* Some helpers to access the data structures */
|
|
|
|
static inline
|
|
|
|
struct platform_nand_chip *get_platform_nandchip(struct mtd_info *mtd)
|
|
|
|
{
|
|
|
|
struct nand_chip *chip = mtd->priv;
|
|
|
|
|
|
|
|
return chip->priv;
|
|
|
|
}
|
|
|
|
|
2013-05-17 10:17:28 +07:00
|
|
|
/* return the supported features. */
|
|
|
|
static inline int onfi_feature(struct nand_chip *chip)
|
|
|
|
{
|
|
|
|
return chip->onfi_version ? le16_to_cpu(chip->onfi_params.features) : 0;
|
|
|
|
}
|
|
|
|
|
2012-09-13 13:57:53 +07:00
|
|
|
/* return the supported asynchronous timing mode. */
|
|
|
|
static inline int onfi_get_async_timing_mode(struct nand_chip *chip)
|
|
|
|
{
|
|
|
|
if (!chip->onfi_version)
|
|
|
|
return ONFI_TIMING_MODE_UNKNOWN;
|
|
|
|
return le16_to_cpu(chip->onfi_params.async_timing_mode);
|
|
|
|
}
|
|
|
|
|
|
|
|
/* return the supported synchronous timing mode. */
|
|
|
|
static inline int onfi_get_sync_timing_mode(struct nand_chip *chip)
|
|
|
|
{
|
|
|
|
if (!chip->onfi_version)
|
|
|
|
return ONFI_TIMING_MODE_UNKNOWN;
|
|
|
|
return le16_to_cpu(chip->onfi_params.src_sync_timing_mode);
|
|
|
|
}
|
|
|
|
|
2013-09-25 13:58:10 +07:00
|
|
|
/*
|
|
|
|
* Check if it is a SLC nand.
|
|
|
|
* The !nand_is_slc() can be used to check the MLC/TLC nand chips.
|
|
|
|
* We do not distinguish the MLC and TLC now.
|
|
|
|
*/
|
|
|
|
static inline bool nand_is_slc(struct nand_chip *chip)
|
|
|
|
{
|
2013-09-25 13:58:11 +07:00
|
|
|
return chip->bits_per_cell == 1;
|
2013-09-25 13:58:10 +07:00
|
|
|
}
|
mtd: nand: force NAND_CMD_READID onto 8-bit bus
The NAND command helpers tend to automatically shift the column address
for x16 bus devices, since most commands expect a word address, not a
byte address. The Read ID command, however, expects an 8-bit address
(i.e., 0x00, 0x20, or 0x40 should not be translated to 0x00, 0x10, or
0x20).
This fixes the column address for a few drivers which imitate the
nand_base defaults. Note that I don't touch sh_flctl.c, since it already
handles this problem slightly differently (note its comment "READID is
always performed using an 8-bit bus").
I have not tested this patch, as I only have x8 parts up for testing at
this point. Hopefully that can change soon...
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Tested-by: Ezequiel Garcia <ezequiel.garcia@free-electrons.com>
Tested-By: Pekon Gupta <pekon@ti.com>
2014-01-30 05:08:12 +07:00
|
|
|
|
|
|
|
/**
|
|
|
|
* Check if the opcode's address should be sent only on the lower 8 bits
|
|
|
|
* @command: opcode to check
|
|
|
|
*/
|
|
|
|
static inline int nand_opcode_8bits(unsigned int command)
|
|
|
|
{
|
|
|
|
return command == NAND_CMD_READID;
|
|
|
|
}
|
|
|
|
|
2005-04-17 05:20:36 +07:00
|
|
|
#endif /* __LINUX_MTD_NAND_H */
|