linux_dsm_epyc7002/drivers/mtd/nand/nand_base.c

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/*
* drivers/mtd/nand.c
*
* Overview:
* This is the generic MTD driver for NAND flash devices. It should be
* capable of working with almost all NAND chips currently available.
* Basic support for AG-AND chips is provided.
*
* Additional technical information is available on
* http://www.linux-mtd.infradead.org/doc/nand.html
*
* Copyright (C) 2000 Steven J. Hill (sjhill@realitydiluted.com)
* 2002-2006 Thomas Gleixner (tglx@linutronix.de)
*
* Credits:
* David Woodhouse for adding multichip support
*
* Aleph One Ltd. and Toby Churchill Ltd. for supporting the
* rework for 2K page size chips
*
* TODO:
* Enable cached programming for 2k page size chips
* Check, if mtd->ecctype should be set to MTD_ECC_HW
* if we have HW ECC support.
* The AG-AND chips have nice features for speed improvement,
* which are not supported yet. Read / program 4 pages in one go.
* BBT table is not serialized, has to be fixed
*
* This program is free software; you can redistribute it and/or modify
* it under the terms of the GNU General Public License version 2 as
* published by the Free Software Foundation.
*
*/
#include <linux/module.h>
#include <linux/delay.h>
#include <linux/errno.h>
#include <linux/err.h>
#include <linux/sched.h>
#include <linux/slab.h>
#include <linux/types.h>
#include <linux/mtd/mtd.h>
#include <linux/mtd/nand.h>
#include <linux/mtd/nand_ecc.h>
#include <linux/mtd/nand_bch.h>
#include <linux/interrupt.h>
#include <linux/bitops.h>
#include <linux/leds.h>
#include <linux/io.h>
#include <linux/mtd/partitions.h>
/* Define default oob placement schemes for large and small page devices */
static struct nand_ecclayout nand_oob_8 = {
.eccbytes = 3,
.eccpos = {0, 1, 2},
.oobfree = {
{.offset = 3,
.length = 2},
{.offset = 6,
.length = 2} }
};
static struct nand_ecclayout nand_oob_16 = {
.eccbytes = 6,
.eccpos = {0, 1, 2, 3, 6, 7},
.oobfree = {
{.offset = 8,
. length = 8} }
};
static struct nand_ecclayout nand_oob_64 = {
.eccbytes = 24,
.eccpos = {
40, 41, 42, 43, 44, 45, 46, 47,
48, 49, 50, 51, 52, 53, 54, 55,
56, 57, 58, 59, 60, 61, 62, 63},
.oobfree = {
{.offset = 2,
.length = 38} }
};
static struct nand_ecclayout nand_oob_128 = {
.eccbytes = 48,
.eccpos = {
80, 81, 82, 83, 84, 85, 86, 87,
88, 89, 90, 91, 92, 93, 94, 95,
96, 97, 98, 99, 100, 101, 102, 103,
104, 105, 106, 107, 108, 109, 110, 111,
112, 113, 114, 115, 116, 117, 118, 119,
120, 121, 122, 123, 124, 125, 126, 127},
.oobfree = {
{.offset = 2,
.length = 78} }
};
static int nand_get_device(struct nand_chip *chip, struct mtd_info *mtd,
int new_state);
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
static int nand_do_write_oob(struct mtd_info *mtd, loff_t to,
struct mtd_oob_ops *ops);
/*
* For devices which display every fart in the system on a separate LED. Is
* compiled away when LED support is disabled.
*/
DEFINE_LED_TRIGGER(nand_led_trigger);
static int check_offs_len(struct mtd_info *mtd,
loff_t ofs, uint64_t len)
{
struct nand_chip *chip = mtd->priv;
int ret = 0;
/* Start address must align on block boundary */
if (ofs & ((1 << chip->phys_erase_shift) - 1)) {
pr_debug("%s: unaligned address\n", __func__);
ret = -EINVAL;
}
/* Length must align on block boundary */
if (len & ((1 << chip->phys_erase_shift) - 1)) {
pr_debug("%s: length not block aligned\n", __func__);
ret = -EINVAL;
}
/* Do not allow past end of device */
if (ofs + len > mtd->size) {
pr_debug("%s: past end of device\n", __func__);
ret = -EINVAL;
}
return ret;
}
/**
* nand_release_device - [GENERIC] release chip
* @mtd: MTD device structure
*
* Deselect, release chip lock and wake up anyone waiting on the device.
*/
static void nand_release_device(struct mtd_info *mtd)
{
struct nand_chip *chip = mtd->priv;
/* De-select the NAND device */
chip->select_chip(mtd, -1);
/* Release the controller and the chip */
spin_lock(&chip->controller->lock);
chip->controller->active = NULL;
chip->state = FL_READY;
wake_up(&chip->controller->wq);
spin_unlock(&chip->controller->lock);
}
/**
* nand_read_byte - [DEFAULT] read one byte from the chip
* @mtd: MTD device structure
*
* Default read function for 8bit buswidth
*/
static uint8_t nand_read_byte(struct mtd_info *mtd)
{
struct nand_chip *chip = mtd->priv;
return readb(chip->IO_ADDR_R);
}
/**
* nand_read_byte16 - [DEFAULT] read one byte endianess aware from the chip
* nand_read_byte16 - [DEFAULT] read one byte endianness aware from the chip
* @mtd: MTD device structure
*
* Default read function for 16bit buswidth with endianness conversion.
*
*/
static uint8_t nand_read_byte16(struct mtd_info *mtd)
{
struct nand_chip *chip = mtd->priv;
return (uint8_t) cpu_to_le16(readw(chip->IO_ADDR_R));
}
/**
* nand_read_word - [DEFAULT] read one word from the chip
* @mtd: MTD device structure
*
* Default read function for 16bit buswidth without endianness conversion.
*/
static u16 nand_read_word(struct mtd_info *mtd)
{
struct nand_chip *chip = mtd->priv;
return readw(chip->IO_ADDR_R);
}
/**
* nand_select_chip - [DEFAULT] control CE line
* @mtd: MTD device structure
* @chipnr: chipnumber to select, -1 for deselect
*
* Default select function for 1 chip devices.
*/
static void nand_select_chip(struct mtd_info *mtd, int chipnr)
{
struct nand_chip *chip = mtd->priv;
switch (chipnr) {
case -1:
chip->cmd_ctrl(mtd, NAND_CMD_NONE, 0 | NAND_CTRL_CHANGE);
break;
case 0:
break;
default:
BUG();
}
}
/**
* nand_write_buf - [DEFAULT] write buffer to chip
* @mtd: MTD device structure
* @buf: data buffer
* @len: number of bytes to write
*
* Default write function for 8bit buswidth.
*/
static void nand_write_buf(struct mtd_info *mtd, const uint8_t *buf, int len)
{
int i;
struct nand_chip *chip = mtd->priv;
for (i = 0; i < len; i++)
writeb(buf[i], chip->IO_ADDR_W);
}
/**
* nand_read_buf - [DEFAULT] read chip data into buffer
* @mtd: MTD device structure
* @buf: buffer to store date
* @len: number of bytes to read
*
* Default read function for 8bit buswidth.
*/
static void nand_read_buf(struct mtd_info *mtd, uint8_t *buf, int len)
{
int i;
struct nand_chip *chip = mtd->priv;
for (i = 0; i < len; i++)
buf[i] = readb(chip->IO_ADDR_R);
}
/**
* nand_verify_buf - [DEFAULT] Verify chip data against buffer
* @mtd: MTD device structure
* @buf: buffer containing the data to compare
* @len: number of bytes to compare
*
* Default verify function for 8bit buswidth.
*/
static int nand_verify_buf(struct mtd_info *mtd, const uint8_t *buf, int len)
{
int i;
struct nand_chip *chip = mtd->priv;
for (i = 0; i < len; i++)
if (buf[i] != readb(chip->IO_ADDR_R))
return -EFAULT;
return 0;
}
/**
* nand_write_buf16 - [DEFAULT] write buffer to chip
* @mtd: MTD device structure
* @buf: data buffer
* @len: number of bytes to write
*
* Default write function for 16bit buswidth.
*/
static void nand_write_buf16(struct mtd_info *mtd, const uint8_t *buf, int len)
{
int i;
struct nand_chip *chip = mtd->priv;
u16 *p = (u16 *) buf;
len >>= 1;
for (i = 0; i < len; i++)
writew(p[i], chip->IO_ADDR_W);
}
/**
* nand_read_buf16 - [DEFAULT] read chip data into buffer
* @mtd: MTD device structure
* @buf: buffer to store date
* @len: number of bytes to read
*
* Default read function for 16bit buswidth.
*/
static void nand_read_buf16(struct mtd_info *mtd, uint8_t *buf, int len)
{
int i;
struct nand_chip *chip = mtd->priv;
u16 *p = (u16 *) buf;
len >>= 1;
for (i = 0; i < len; i++)
p[i] = readw(chip->IO_ADDR_R);
}
/**
* nand_verify_buf16 - [DEFAULT] Verify chip data against buffer
* @mtd: MTD device structure
* @buf: buffer containing the data to compare
* @len: number of bytes to compare
*
* Default verify function for 16bit buswidth.
*/
static int nand_verify_buf16(struct mtd_info *mtd, const uint8_t *buf, int len)
{
int i;
struct nand_chip *chip = mtd->priv;
u16 *p = (u16 *) buf;
len >>= 1;
for (i = 0; i < len; i++)
if (p[i] != readw(chip->IO_ADDR_R))
return -EFAULT;
return 0;
}
/**
* nand_block_bad - [DEFAULT] Read bad block marker from the chip
* @mtd: MTD device structure
* @ofs: offset from device start
* @getchip: 0, if the chip is already selected
*
* Check, if the block is bad.
*/
static int nand_block_bad(struct mtd_info *mtd, loff_t ofs, int getchip)
{
int page, chipnr, res = 0;
struct nand_chip *chip = mtd->priv;
u16 bad;
if (chip->bbt_options & NAND_BBT_SCANLASTPAGE)
mtd: nand: support alternate BB marker locations on MLC This is a slightly modified version of a patch submitted last year by Reuben Dowle <reuben.dowle@navico.com>. His original comments follow: This patch adds support for some MLC NAND flashes that place the BB marker in the LAST page of the bad block rather than the FIRST page used for SLC NAND and other types of MLC nand. Lifted from Samsung datasheet for K9LG8G08U0A (1Gbyte MLC NAND): " Identifying Initial Invalid Block(s) All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The initial invalid block(s) status is defined by the 1st byte in the spare area. Samsung makes sure that the last page of every initial invalid block has non-FFh data at the column address of 2,048. ... " As far as I can tell, this is the same for all Samsung MLC nand, and in fact the samsung bsp for the processor used in our project (s3c6410) actually contained a hack similar to this patch but less portable to enable use of their NAND parts. I discovered this problem when trying to use a Micron NAND which does not used this layout - I wish samsung would put their stuff in main-line to avoid this type of problem. Currently this patch causes all MLC nand with manufacturer codes from Samsung and ST(Numonyx) to use this alternative location, since these are the manufactures that I know of that use this layout. Signed-off-by: Kevin Cernekee <cernekee@gmail.com> Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
2010-05-05 10:58:10 +07:00
ofs += mtd->erasesize - mtd->writesize;
page = (int)(ofs >> chip->page_shift) & chip->pagemask;
if (getchip) {
chipnr = (int)(ofs >> chip->chip_shift);
nand_get_device(chip, mtd, FL_READING);
/* Select the NAND device */
chip->select_chip(mtd, chipnr);
}
if (chip->options & NAND_BUSWIDTH_16) {
chip->cmdfunc(mtd, NAND_CMD_READOOB, chip->badblockpos & 0xFE,
page);
bad = cpu_to_le16(chip->read_word(mtd));
if (chip->badblockpos & 0x1)
bad >>= 8;
else
bad &= 0xFF;
} else {
chip->cmdfunc(mtd, NAND_CMD_READOOB, chip->badblockpos, page);
bad = chip->read_byte(mtd);
}
if (likely(chip->badblockbits == 8))
res = bad != 0xFF;
else
res = hweight8(bad) < chip->badblockbits;
if (getchip)
nand_release_device(mtd);
return res;
}
/**
* nand_default_block_markbad - [DEFAULT] mark a block bad
* @mtd: MTD device structure
* @ofs: offset from device start
*
* This is the default implementation, which can be overridden by a hardware
* specific driver.
*/
static int nand_default_block_markbad(struct mtd_info *mtd, loff_t ofs)
{
struct nand_chip *chip = mtd->priv;
uint8_t buf[2] = { 0, 0 };
int block, ret, i = 0;
if (chip->bbt_options & NAND_BBT_SCANLASTPAGE)
mtd: nand: support alternate BB marker locations on MLC This is a slightly modified version of a patch submitted last year by Reuben Dowle <reuben.dowle@navico.com>. His original comments follow: This patch adds support for some MLC NAND flashes that place the BB marker in the LAST page of the bad block rather than the FIRST page used for SLC NAND and other types of MLC nand. Lifted from Samsung datasheet for K9LG8G08U0A (1Gbyte MLC NAND): " Identifying Initial Invalid Block(s) All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The initial invalid block(s) status is defined by the 1st byte in the spare area. Samsung makes sure that the last page of every initial invalid block has non-FFh data at the column address of 2,048. ... " As far as I can tell, this is the same for all Samsung MLC nand, and in fact the samsung bsp for the processor used in our project (s3c6410) actually contained a hack similar to this patch but less portable to enable use of their NAND parts. I discovered this problem when trying to use a Micron NAND which does not used this layout - I wish samsung would put their stuff in main-line to avoid this type of problem. Currently this patch causes all MLC nand with manufacturer codes from Samsung and ST(Numonyx) to use this alternative location, since these are the manufactures that I know of that use this layout. Signed-off-by: Kevin Cernekee <cernekee@gmail.com> Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
2010-05-05 10:58:10 +07:00
ofs += mtd->erasesize - mtd->writesize;
/* Get block number */
block = (int)(ofs >> chip->bbt_erase_shift);
if (chip->bbt)
chip->bbt[block >> 2] |= 0x01 << ((block & 0x03) << 1);
/* Do we have a flash based bad block table? */
if (chip->bbt_options & NAND_BBT_USE_FLASH)
ret = nand_update_bbt(mtd, ofs);
else {
struct mtd_oob_ops ops;
nand_get_device(chip, mtd, FL_WRITING);
/*
* Write to first two pages if necessary. If we write to more
* than one location, the first error encountered quits the
* procedure. We write two bytes per location, so we dont have
* to mess with 16 bit access.
*/
ops.len = ops.ooblen = 2;
ops.datbuf = NULL;
ops.oobbuf = buf;
ops.ooboffs = chip->badblockpos & ~0x01;
do {
ret = nand_do_write_oob(mtd, ofs, &ops);
i++;
ofs += mtd->writesize;
} while (!ret && (chip->bbt_options & NAND_BBT_SCAN2NDPAGE) &&
i < 2);
nand_release_device(mtd);
}
if (!ret)
mtd->ecc_stats.badblocks++;
return ret;
}
/**
* nand_check_wp - [GENERIC] check if the chip is write protected
* @mtd: MTD device structure
*
* Check, if the device is write protected. The function expects, that the
* device is already selected.
*/
static int nand_check_wp(struct mtd_info *mtd)
{
struct nand_chip *chip = mtd->priv;
/* Broken xD cards report WP despite being writable */
if (chip->options & NAND_BROKEN_XD)
return 0;
/* Check the WP bit */
chip->cmdfunc(mtd, NAND_CMD_STATUS, -1, -1);
return (chip->read_byte(mtd) & NAND_STATUS_WP) ? 0 : 1;
}
/**
* nand_block_checkbad - [GENERIC] Check if a block is marked bad
* @mtd: MTD device structure
* @ofs: offset from device start
* @getchip: 0, if the chip is already selected
* @allowbbt: 1, if its allowed to access the bbt area
*
* Check, if the block is bad. Either by reading the bad block table or
* calling of the scan function.
*/
static int nand_block_checkbad(struct mtd_info *mtd, loff_t ofs, int getchip,
int allowbbt)
{
struct nand_chip *chip = mtd->priv;
if (!chip->bbt)
return chip->block_bad(mtd, ofs, getchip);
/* Return info from the table */
return nand_isbad_bbt(mtd, ofs, allowbbt);
}
/**
* panic_nand_wait_ready - [GENERIC] Wait for the ready pin after commands.
* @mtd: MTD device structure
* @timeo: Timeout
*
* Helper function for nand_wait_ready used when needing to wait in interrupt
* context.
*/
static void panic_nand_wait_ready(struct mtd_info *mtd, unsigned long timeo)
{
struct nand_chip *chip = mtd->priv;
int i;
/* Wait for the device to get ready */
for (i = 0; i < timeo; i++) {
if (chip->dev_ready(mtd))
break;
touch_softlockup_watchdog();
mdelay(1);
}
}
/* Wait for the ready pin, after a command. The timeout is caught later. */
void nand_wait_ready(struct mtd_info *mtd)
{
struct nand_chip *chip = mtd->priv;
unsigned long timeo = jiffies + 2;
/* 400ms timeout */
if (in_interrupt() || oops_in_progress)
return panic_nand_wait_ready(mtd, 400);
led_trigger_event(nand_led_trigger, LED_FULL);
/* Wait until command is processed or timeout occurs */
do {
if (chip->dev_ready(mtd))
break;
touch_softlockup_watchdog();
} while (time_before(jiffies, timeo));
led_trigger_event(nand_led_trigger, LED_OFF);
}
EXPORT_SYMBOL_GPL(nand_wait_ready);
/**
* nand_command - [DEFAULT] Send command to NAND device
* @mtd: MTD device structure
* @command: the command to be sent
* @column: the column address for this command, -1 if none
* @page_addr: the page address for this command, -1 if none
*
* Send command to NAND device. This function is used for small page devices
* (256/512 Bytes per page).
*/
static void nand_command(struct mtd_info *mtd, unsigned int command,
int column, int page_addr)
{
register struct nand_chip *chip = mtd->priv;
int ctrl = NAND_CTRL_CLE | NAND_CTRL_CHANGE;
/* Write out the command to the device */
if (command == NAND_CMD_SEQIN) {
int readcmd;
if (column >= mtd->writesize) {
/* OOB area */
column -= mtd->writesize;
readcmd = NAND_CMD_READOOB;
} else if (column < 256) {
/* First 256 bytes --> READ0 */
readcmd = NAND_CMD_READ0;
} else {
column -= 256;
readcmd = NAND_CMD_READ1;
}
chip->cmd_ctrl(mtd, readcmd, ctrl);
ctrl &= ~NAND_CTRL_CHANGE;
}
chip->cmd_ctrl(mtd, command, ctrl);
/* Address cycle, when necessary */
ctrl = NAND_CTRL_ALE | NAND_CTRL_CHANGE;
/* Serially input address */
if (column != -1) {
/* Adjust columns for 16 bit buswidth */
if (chip->options & NAND_BUSWIDTH_16)
column >>= 1;
chip->cmd_ctrl(mtd, column, ctrl);
ctrl &= ~NAND_CTRL_CHANGE;
}
if (page_addr != -1) {
chip->cmd_ctrl(mtd, page_addr, ctrl);
ctrl &= ~NAND_CTRL_CHANGE;
chip->cmd_ctrl(mtd, page_addr >> 8, ctrl);
/* One more address cycle for devices > 32MiB */
if (chip->chipsize > (32 << 20))
chip->cmd_ctrl(mtd, page_addr >> 16, ctrl);
}
chip->cmd_ctrl(mtd, NAND_CMD_NONE, NAND_NCE | NAND_CTRL_CHANGE);
/*
* Program and erase have their own busy handlers status and sequential
* in needs no delay
*/
switch (command) {
case NAND_CMD_PAGEPROG:
case NAND_CMD_ERASE1:
case NAND_CMD_ERASE2:
case NAND_CMD_SEQIN:
case NAND_CMD_STATUS:
return;
case NAND_CMD_RESET:
if (chip->dev_ready)
break;
udelay(chip->chip_delay);
chip->cmd_ctrl(mtd, NAND_CMD_STATUS,
NAND_CTRL_CLE | NAND_CTRL_CHANGE);
chip->cmd_ctrl(mtd,
NAND_CMD_NONE, NAND_NCE | NAND_CTRL_CHANGE);
while (!(chip->read_byte(mtd) & NAND_STATUS_READY))
;
return;
/* This applies to read commands */
default:
/*
* If we don't have access to the busy pin, we apply the given
* command delay
*/
if (!chip->dev_ready) {
udelay(chip->chip_delay);
return;
}
}
/*
* Apply this short delay always to ensure that we do wait tWB in
* any case on any machine.
*/
ndelay(100);
nand_wait_ready(mtd);
}
/**
* nand_command_lp - [DEFAULT] Send command to NAND large page device
* @mtd: MTD device structure
* @command: the command to be sent
* @column: the column address for this command, -1 if none
* @page_addr: the page address for this command, -1 if none
*
* Send command to NAND device. This is the version for the new large page
* devices. We don't have the separate regions as we have in the small page
* devices. We must emulate NAND_CMD_READOOB to keep the code compatible.
*/
static void nand_command_lp(struct mtd_info *mtd, unsigned int command,
int column, int page_addr)
{
register struct nand_chip *chip = mtd->priv;
/* Emulate NAND_CMD_READOOB */
if (command == NAND_CMD_READOOB) {
column += mtd->writesize;
command = NAND_CMD_READ0;
}
/* Command latch cycle */
chip->cmd_ctrl(mtd, command & 0xff,
NAND_NCE | NAND_CLE | NAND_CTRL_CHANGE);
if (column != -1 || page_addr != -1) {
int ctrl = NAND_CTRL_CHANGE | NAND_NCE | NAND_ALE;
/* Serially input address */
if (column != -1) {
/* Adjust columns for 16 bit buswidth */
if (chip->options & NAND_BUSWIDTH_16)
column >>= 1;
chip->cmd_ctrl(mtd, column, ctrl);
ctrl &= ~NAND_CTRL_CHANGE;
chip->cmd_ctrl(mtd, column >> 8, ctrl);
}
if (page_addr != -1) {
chip->cmd_ctrl(mtd, page_addr, ctrl);
chip->cmd_ctrl(mtd, page_addr >> 8,
NAND_NCE | NAND_ALE);
/* One more address cycle for devices > 128MiB */
if (chip->chipsize > (128 << 20))
chip->cmd_ctrl(mtd, page_addr >> 16,
NAND_NCE | NAND_ALE);
}
}
chip->cmd_ctrl(mtd, NAND_CMD_NONE, NAND_NCE | NAND_CTRL_CHANGE);
/*
* Program and erase have their own busy handlers status, sequential
* in, and deplete1 need no delay.
*/
switch (command) {
case NAND_CMD_CACHEDPROG:
case NAND_CMD_PAGEPROG:
case NAND_CMD_ERASE1:
case NAND_CMD_ERASE2:
case NAND_CMD_SEQIN:
case NAND_CMD_RNDIN:
case NAND_CMD_STATUS:
case NAND_CMD_DEPLETE1:
return;
case NAND_CMD_STATUS_ERROR:
case NAND_CMD_STATUS_ERROR0:
case NAND_CMD_STATUS_ERROR1:
case NAND_CMD_STATUS_ERROR2:
case NAND_CMD_STATUS_ERROR3:
/* Read error status commands require only a short delay */
udelay(chip->chip_delay);
return;
case NAND_CMD_RESET:
if (chip->dev_ready)
break;
udelay(chip->chip_delay);
chip->cmd_ctrl(mtd, NAND_CMD_STATUS,
NAND_NCE | NAND_CLE | NAND_CTRL_CHANGE);
chip->cmd_ctrl(mtd, NAND_CMD_NONE,
NAND_NCE | NAND_CTRL_CHANGE);
while (!(chip->read_byte(mtd) & NAND_STATUS_READY))
;
return;
case NAND_CMD_RNDOUT:
/* No ready / busy check necessary */
chip->cmd_ctrl(mtd, NAND_CMD_RNDOUTSTART,
NAND_NCE | NAND_CLE | NAND_CTRL_CHANGE);
chip->cmd_ctrl(mtd, NAND_CMD_NONE,
NAND_NCE | NAND_CTRL_CHANGE);
return;
case NAND_CMD_READ0:
chip->cmd_ctrl(mtd, NAND_CMD_READSTART,
NAND_NCE | NAND_CLE | NAND_CTRL_CHANGE);
chip->cmd_ctrl(mtd, NAND_CMD_NONE,
NAND_NCE | NAND_CTRL_CHANGE);
/* This applies to read commands */
default:
/*
* If we don't have access to the busy pin, we apply the given
* command delay.
*/
if (!chip->dev_ready) {
udelay(chip->chip_delay);
return;
}
}
/*
* Apply this short delay always to ensure that we do wait tWB in
* any case on any machine.
*/
ndelay(100);
nand_wait_ready(mtd);
}
/**
* panic_nand_get_device - [GENERIC] Get chip for selected access
* @chip: the nand chip descriptor
* @mtd: MTD device structure
* @new_state: the state which is requested
*
* Used when in panic, no locks are taken.
*/
static void panic_nand_get_device(struct nand_chip *chip,
struct mtd_info *mtd, int new_state)
{
/* Hardware controller shared among independent devices */
chip->controller->active = chip;
chip->state = new_state;
}
/**
* nand_get_device - [GENERIC] Get chip for selected access
* @chip: the nand chip descriptor
* @mtd: MTD device structure
* @new_state: the state which is requested
*
* Get the device and lock it for exclusive access
*/
static int
nand_get_device(struct nand_chip *chip, struct mtd_info *mtd, int new_state)
{
spinlock_t *lock = &chip->controller->lock;
wait_queue_head_t *wq = &chip->controller->wq;
DECLARE_WAITQUEUE(wait, current);
retry:
spin_lock(lock);
/* Hardware controller shared among independent devices */
if (!chip->controller->active)
chip->controller->active = chip;
if (chip->controller->active == chip && chip->state == FL_READY) {
chip->state = new_state;
spin_unlock(lock);
return 0;
}
if (new_state == FL_PM_SUSPENDED) {
if (chip->controller->active->state == FL_PM_SUSPENDED) {
chip->state = FL_PM_SUSPENDED;
spin_unlock(lock);
return 0;
}
}
set_current_state(TASK_UNINTERRUPTIBLE);
add_wait_queue(wq, &wait);
spin_unlock(lock);
schedule();
remove_wait_queue(wq, &wait);
goto retry;
}
/**
* panic_nand_wait - [GENERIC] wait until the command is done
* @mtd: MTD device structure
* @chip: NAND chip structure
* @timeo: timeout
*
* Wait for command done. This is a helper function for nand_wait used when
* we are in interrupt context. May happen when in panic and trying to write
* an oops through mtdoops.
*/
static void panic_nand_wait(struct mtd_info *mtd, struct nand_chip *chip,
unsigned long timeo)
{
int i;
for (i = 0; i < timeo; i++) {
if (chip->dev_ready) {
if (chip->dev_ready(mtd))
break;
} else {
if (chip->read_byte(mtd) & NAND_STATUS_READY)
break;
}
mdelay(1);
}
}
/**
* nand_wait - [DEFAULT] wait until the command is done
* @mtd: MTD device structure
* @chip: NAND chip structure
*
* Wait for command done. This applies to erase and program only. Erase can
* take up to 400ms and program up to 20ms according to general NAND and
* SmartMedia specs.
*/
static int nand_wait(struct mtd_info *mtd, struct nand_chip *chip)
{
unsigned long timeo = jiffies;
int status, state = chip->state;
if (state == FL_ERASING)
timeo += (HZ * 400) / 1000;
else
timeo += (HZ * 20) / 1000;
led_trigger_event(nand_led_trigger, LED_FULL);
/*
* Apply this short delay always to ensure that we do wait tWB in any
* case on any machine.
*/
ndelay(100);
if ((state == FL_ERASING) && (chip->options & NAND_IS_AND))
chip->cmdfunc(mtd, NAND_CMD_STATUS_MULTI, -1, -1);
else
chip->cmdfunc(mtd, NAND_CMD_STATUS, -1, -1);
if (in_interrupt() || oops_in_progress)
panic_nand_wait(mtd, chip, timeo);
else {
while (time_before(jiffies, timeo)) {
if (chip->dev_ready) {
if (chip->dev_ready(mtd))
break;
} else {
if (chip->read_byte(mtd) & NAND_STATUS_READY)
break;
}
cond_resched();
}
}
led_trigger_event(nand_led_trigger, LED_OFF);
status = (int)chip->read_byte(mtd);
return status;
}
/**
* __nand_unlock - [REPLACEABLE] unlocks specified locked blocks
* @mtd: mtd info
* @ofs: offset to start unlock from
* @len: length to unlock
* @invert: when = 0, unlock the range of blocks within the lower and
* upper boundary address
* when = 1, unlock the range of blocks outside the boundaries
* of the lower and upper boundary address
*
* Returs unlock status.
*/
static int __nand_unlock(struct mtd_info *mtd, loff_t ofs,
uint64_t len, int invert)
{
int ret = 0;
int status, page;
struct nand_chip *chip = mtd->priv;
/* Submit address of first page to unlock */
page = ofs >> chip->page_shift;
chip->cmdfunc(mtd, NAND_CMD_UNLOCK1, -1, page & chip->pagemask);
/* Submit address of last page to unlock */
page = (ofs + len) >> chip->page_shift;
chip->cmdfunc(mtd, NAND_CMD_UNLOCK2, -1,
(page | invert) & chip->pagemask);
/* Call wait ready function */
status = chip->waitfunc(mtd, chip);
/* See if device thinks it succeeded */
if (status & 0x01) {
pr_debug("%s: error status = 0x%08x\n",
__func__, status);
ret = -EIO;
}
return ret;
}
/**
* nand_unlock - [REPLACEABLE] unlocks specified locked blocks
* @mtd: mtd info
* @ofs: offset to start unlock from
* @len: length to unlock
*
* Returns unlock status.
*/
int nand_unlock(struct mtd_info *mtd, loff_t ofs, uint64_t len)
{
int ret = 0;
int chipnr;
struct nand_chip *chip = mtd->priv;
pr_debug("%s: start = 0x%012llx, len = %llu\n",
__func__, (unsigned long long)ofs, len);
if (check_offs_len(mtd, ofs, len))
ret = -EINVAL;
/* Align to last block address if size addresses end of the device */
if (ofs + len == mtd->size)
len -= mtd->erasesize;
nand_get_device(chip, mtd, FL_UNLOCKING);
/* Shift to get chip number */
chipnr = ofs >> chip->chip_shift;
chip->select_chip(mtd, chipnr);
/* Check, if it is write protected */
if (nand_check_wp(mtd)) {
pr_debug("%s: device is write protected!\n",
__func__);
ret = -EIO;
goto out;
}
ret = __nand_unlock(mtd, ofs, len, 0);
out:
nand_release_device(mtd);
return ret;
}
EXPORT_SYMBOL(nand_unlock);
/**
* nand_lock - [REPLACEABLE] locks all blocks present in the device
* @mtd: mtd info
* @ofs: offset to start unlock from
* @len: length to unlock
*
* This feature is not supported in many NAND parts. 'Micron' NAND parts do
* have this feature, but it allows only to lock all blocks, not for specified
* range for block. Implementing 'lock' feature by making use of 'unlock', for
* now.
*
* Returns lock status.
*/
int nand_lock(struct mtd_info *mtd, loff_t ofs, uint64_t len)
{
int ret = 0;
int chipnr, status, page;
struct nand_chip *chip = mtd->priv;
pr_debug("%s: start = 0x%012llx, len = %llu\n",
__func__, (unsigned long long)ofs, len);
if (check_offs_len(mtd, ofs, len))
ret = -EINVAL;
nand_get_device(chip, mtd, FL_LOCKING);
/* Shift to get chip number */
chipnr = ofs >> chip->chip_shift;
chip->select_chip(mtd, chipnr);
/* Check, if it is write protected */
if (nand_check_wp(mtd)) {
pr_debug("%s: device is write protected!\n",
__func__);
status = MTD_ERASE_FAILED;
ret = -EIO;
goto out;
}
/* Submit address of first page to lock */
page = ofs >> chip->page_shift;
chip->cmdfunc(mtd, NAND_CMD_LOCK, -1, page & chip->pagemask);
/* Call wait ready function */
status = chip->waitfunc(mtd, chip);
/* See if device thinks it succeeded */
if (status & 0x01) {
pr_debug("%s: error status = 0x%08x\n",
__func__, status);
ret = -EIO;
goto out;
}
ret = __nand_unlock(mtd, ofs, len, 0x1);
out:
nand_release_device(mtd);
return ret;
}
EXPORT_SYMBOL(nand_lock);
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
/**
* nand_read_page_raw - [INTERN] read raw page data without ecc
* @mtd: mtd info structure
* @chip: nand chip info structure
* @buf: buffer to store read data
* @page: page number to read
*
* Not for syndrome calculating ECC controllers, which use a special oob layout.
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
*/
static int nand_read_page_raw(struct mtd_info *mtd, struct nand_chip *chip,
uint8_t *buf, int page)
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
{
chip->read_buf(mtd, buf, mtd->writesize);
chip->read_buf(mtd, chip->oob_poi, mtd->oobsize);
return 0;
}
/**
* nand_read_page_raw_syndrome - [INTERN] read raw page data without ecc
* @mtd: mtd info structure
* @chip: nand chip info structure
* @buf: buffer to store read data
* @page: page number to read
*
* We need a special oob layout and handling even when OOB isn't used.
*/
static int nand_read_page_raw_syndrome(struct mtd_info *mtd,
struct nand_chip *chip,
uint8_t *buf, int page)
{
int eccsize = chip->ecc.size;
int eccbytes = chip->ecc.bytes;
uint8_t *oob = chip->oob_poi;
int steps, size;
for (steps = chip->ecc.steps; steps > 0; steps--) {
chip->read_buf(mtd, buf, eccsize);
buf += eccsize;
if (chip->ecc.prepad) {
chip->read_buf(mtd, oob, chip->ecc.prepad);
oob += chip->ecc.prepad;
}
chip->read_buf(mtd, oob, eccbytes);
oob += eccbytes;
if (chip->ecc.postpad) {
chip->read_buf(mtd, oob, chip->ecc.postpad);
oob += chip->ecc.postpad;
}
}
size = mtd->oobsize - (oob - chip->oob_poi);
if (size)
chip->read_buf(mtd, oob, size);
return 0;
}
/**
* nand_read_page_swecc - [REPLACEABLE] software ECC based page read function
* @mtd: mtd info structure
* @chip: nand chip info structure
* @buf: buffer to store read data
* @page: page number to read
*/
static int nand_read_page_swecc(struct mtd_info *mtd, struct nand_chip *chip,
uint8_t *buf, int page)
{
int i, eccsize = chip->ecc.size;
int eccbytes = chip->ecc.bytes;
int eccsteps = chip->ecc.steps;
uint8_t *p = buf;
uint8_t *ecc_calc = chip->buffers->ecccalc;
uint8_t *ecc_code = chip->buffers->ecccode;
uint32_t *eccpos = chip->ecc.layout->eccpos;
chip->ecc.read_page_raw(mtd, chip, buf, page);
for (i = 0; eccsteps; eccsteps--, i += eccbytes, p += eccsize)
chip->ecc.calculate(mtd, p, &ecc_calc[i]);
for (i = 0; i < chip->ecc.total; i++)
ecc_code[i] = chip->oob_poi[eccpos[i]];
eccsteps = chip->ecc.steps;
p = buf;
for (i = 0 ; eccsteps; eccsteps--, i += eccbytes, p += eccsize) {
int stat;
stat = chip->ecc.correct(mtd, p, &ecc_code[i], &ecc_calc[i]);
if (stat < 0)
mtd->ecc_stats.failed++;
else
mtd->ecc_stats.corrected += stat;
}
return 0;
}
/**
* nand_read_subpage - [REPLACEABLE] software ECC based sub-page read function
* @mtd: mtd info structure
* @chip: nand chip info structure
* @data_offs: offset of requested data within the page
* @readlen: data length
* @bufpoi: buffer to store read data
*/
static int nand_read_subpage(struct mtd_info *mtd, struct nand_chip *chip,
uint32_t data_offs, uint32_t readlen, uint8_t *bufpoi)
{
int start_step, end_step, num_steps;
uint32_t *eccpos = chip->ecc.layout->eccpos;
uint8_t *p;
int data_col_addr, i, gaps = 0;
int datafrag_len, eccfrag_len, aligned_len, aligned_pos;
int busw = (chip->options & NAND_BUSWIDTH_16) ? 2 : 1;
int index = 0;
/* Column address within the page aligned to ECC size (256bytes) */
start_step = data_offs / chip->ecc.size;
end_step = (data_offs + readlen - 1) / chip->ecc.size;
num_steps = end_step - start_step + 1;
/* Data size aligned to ECC ecc.size */
datafrag_len = num_steps * chip->ecc.size;
eccfrag_len = num_steps * chip->ecc.bytes;
data_col_addr = start_step * chip->ecc.size;
/* If we read not a page aligned data */
if (data_col_addr != 0)
chip->cmdfunc(mtd, NAND_CMD_RNDOUT, data_col_addr, -1);
p = bufpoi + data_col_addr;
chip->read_buf(mtd, p, datafrag_len);
/* Calculate ECC */
for (i = 0; i < eccfrag_len ; i += chip->ecc.bytes, p += chip->ecc.size)
chip->ecc.calculate(mtd, p, &chip->buffers->ecccalc[i]);
/*
* The performance is faster if we position offsets according to
* ecc.pos. Let's make sure that there are no gaps in ECC positions.
*/
for (i = 0; i < eccfrag_len - 1; i++) {
if (eccpos[i + start_step * chip->ecc.bytes] + 1 !=
eccpos[i + start_step * chip->ecc.bytes + 1]) {
gaps = 1;
break;
}
}
if (gaps) {
chip->cmdfunc(mtd, NAND_CMD_RNDOUT, mtd->writesize, -1);
chip->read_buf(mtd, chip->oob_poi, mtd->oobsize);
} else {
/*
* Send the command to read the particular ECC bytes take care
* about buswidth alignment in read_buf.
*/
index = start_step * chip->ecc.bytes;
aligned_pos = eccpos[index] & ~(busw - 1);
aligned_len = eccfrag_len;
if (eccpos[index] & (busw - 1))
aligned_len++;
if (eccpos[index + (num_steps * chip->ecc.bytes)] & (busw - 1))
aligned_len++;
chip->cmdfunc(mtd, NAND_CMD_RNDOUT,
mtd->writesize + aligned_pos, -1);
chip->read_buf(mtd, &chip->oob_poi[aligned_pos], aligned_len);
}
for (i = 0; i < eccfrag_len; i++)
chip->buffers->ecccode[i] = chip->oob_poi[eccpos[i + index]];
p = bufpoi + data_col_addr;
for (i = 0; i < eccfrag_len ; i += chip->ecc.bytes, p += chip->ecc.size) {
int stat;
stat = chip->ecc.correct(mtd, p,
&chip->buffers->ecccode[i], &chip->buffers->ecccalc[i]);
if (stat < 0)
mtd->ecc_stats.failed++;
else
mtd->ecc_stats.corrected += stat;
}
return 0;
}
/**
* nand_read_page_hwecc - [REPLACEABLE] hardware ECC based page read function
* @mtd: mtd info structure
* @chip: nand chip info structure
* @buf: buffer to store read data
* @page: page number to read
*
* Not for syndrome calculating ECC controllers which need a special oob layout.
*/
static int nand_read_page_hwecc(struct mtd_info *mtd, struct nand_chip *chip,
uint8_t *buf, int page)
{
int i, eccsize = chip->ecc.size;
int eccbytes = chip->ecc.bytes;
int eccsteps = chip->ecc.steps;
uint8_t *p = buf;
uint8_t *ecc_calc = chip->buffers->ecccalc;
uint8_t *ecc_code = chip->buffers->ecccode;
uint32_t *eccpos = chip->ecc.layout->eccpos;
for (i = 0; eccsteps; eccsteps--, i += eccbytes, p += eccsize) {
chip->ecc.hwctl(mtd, NAND_ECC_READ);
chip->read_buf(mtd, p, eccsize);
chip->ecc.calculate(mtd, p, &ecc_calc[i]);
}
chip->read_buf(mtd, chip->oob_poi, mtd->oobsize);
for (i = 0; i < chip->ecc.total; i++)
ecc_code[i] = chip->oob_poi[eccpos[i]];
eccsteps = chip->ecc.steps;
p = buf;
for (i = 0 ; eccsteps; eccsteps--, i += eccbytes, p += eccsize) {
int stat;
stat = chip->ecc.correct(mtd, p, &ecc_code[i], &ecc_calc[i]);
if (stat < 0)
mtd->ecc_stats.failed++;
else
mtd->ecc_stats.corrected += stat;
}
return 0;
}
/**
* nand_read_page_hwecc_oob_first - [REPLACEABLE] hw ecc, read oob first
* @mtd: mtd info structure
* @chip: nand chip info structure
* @buf: buffer to store read data
* @page: page number to read
*
* Hardware ECC for large page chips, require OOB to be read first. For this
* ECC mode, the write_page method is re-used from ECC_HW. These methods
* read/write ECC from the OOB area, unlike the ECC_HW_SYNDROME support with
* multiple ECC steps, follows the "infix ECC" scheme and reads/writes ECC from
* the data area, by overwriting the NAND manufacturer bad block markings.
*/
static int nand_read_page_hwecc_oob_first(struct mtd_info *mtd,
struct nand_chip *chip, uint8_t *buf, int page)
{
int i, eccsize = chip->ecc.size;
int eccbytes = chip->ecc.bytes;
int eccsteps = chip->ecc.steps;
uint8_t *p = buf;
uint8_t *ecc_code = chip->buffers->ecccode;
uint32_t *eccpos = chip->ecc.layout->eccpos;
uint8_t *ecc_calc = chip->buffers->ecccalc;
/* Read the OOB area first */
chip->cmdfunc(mtd, NAND_CMD_READOOB, 0, page);
chip->read_buf(mtd, chip->oob_poi, mtd->oobsize);
chip->cmdfunc(mtd, NAND_CMD_READ0, 0, page);
for (i = 0; i < chip->ecc.total; i++)
ecc_code[i] = chip->oob_poi[eccpos[i]];
for (i = 0; eccsteps; eccsteps--, i += eccbytes, p += eccsize) {
int stat;
chip->ecc.hwctl(mtd, NAND_ECC_READ);
chip->read_buf(mtd, p, eccsize);
chip->ecc.calculate(mtd, p, &ecc_calc[i]);
stat = chip->ecc.correct(mtd, p, &ecc_code[i], NULL);
if (stat < 0)
mtd->ecc_stats.failed++;
else
mtd->ecc_stats.corrected += stat;
}
return 0;
}
/**
* nand_read_page_syndrome - [REPLACEABLE] hardware ECC syndrome based page read
* @mtd: mtd info structure
* @chip: nand chip info structure
* @buf: buffer to store read data
* @page: page number to read
*
* The hw generator calculates the error syndrome automatically. Therefore we
* need a special oob layout and handling.
*/
static int nand_read_page_syndrome(struct mtd_info *mtd, struct nand_chip *chip,
uint8_t *buf, int page)
{
int i, eccsize = chip->ecc.size;
int eccbytes = chip->ecc.bytes;
int eccsteps = chip->ecc.steps;
uint8_t *p = buf;
uint8_t *oob = chip->oob_poi;
for (i = 0; eccsteps; eccsteps--, i += eccbytes, p += eccsize) {
int stat;
chip->ecc.hwctl(mtd, NAND_ECC_READ);
chip->read_buf(mtd, p, eccsize);
if (chip->ecc.prepad) {
chip->read_buf(mtd, oob, chip->ecc.prepad);
oob += chip->ecc.prepad;
}
chip->ecc.hwctl(mtd, NAND_ECC_READSYN);
chip->read_buf(mtd, oob, eccbytes);
stat = chip->ecc.correct(mtd, p, oob, NULL);
if (stat < 0)
mtd->ecc_stats.failed++;
else
mtd->ecc_stats.corrected += stat;
oob += eccbytes;
if (chip->ecc.postpad) {
chip->read_buf(mtd, oob, chip->ecc.postpad);
oob += chip->ecc.postpad;
}
}
/* Calculate remaining oob bytes */
i = mtd->oobsize - (oob - chip->oob_poi);
if (i)
chip->read_buf(mtd, oob, i);
return 0;
}
/**
* nand_transfer_oob - [INTERN] Transfer oob to client buffer
* @chip: nand chip structure
* @oob: oob destination address
* @ops: oob ops structure
* @len: size of oob to transfer
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
*/
static uint8_t *nand_transfer_oob(struct nand_chip *chip, uint8_t *oob,
struct mtd_oob_ops *ops, size_t len)
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
{
switch (ops->mode) {
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
case MTD_OPS_PLACE_OOB:
case MTD_OPS_RAW:
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
memcpy(oob, chip->oob_poi + ops->ooboffs, len);
return oob + len;
case MTD_OPS_AUTO_OOB: {
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
struct nand_oobfree *free = chip->ecc.layout->oobfree;
uint32_t boffs = 0, roffs = ops->ooboffs;
size_t bytes = 0;
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
for (; free->length && len; free++, len -= bytes) {
/* Read request not from offset 0? */
if (unlikely(roffs)) {
if (roffs >= free->length) {
roffs -= free->length;
continue;
}
boffs = free->offset + roffs;
bytes = min_t(size_t, len,
(free->length - roffs));
roffs = 0;
} else {
bytes = min_t(size_t, len, free->length);
boffs = free->offset;
}
memcpy(oob, chip->oob_poi + boffs, bytes);
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
oob += bytes;
}
return oob;
}
default:
BUG();
}
return NULL;
}
/**
* nand_do_read_ops - [INTERN] Read data with ECC
* @mtd: MTD device structure
* @from: offset to read from
* @ops: oob ops structure
*
* Internal function. Called with chip held.
*/
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
static int nand_do_read_ops(struct mtd_info *mtd, loff_t from,
struct mtd_oob_ops *ops)
{
int chipnr, page, realpage, col, bytes, aligned;
struct nand_chip *chip = mtd->priv;
struct mtd_ecc_stats stats;
int blkcheck = (1 << (chip->phys_erase_shift - chip->page_shift)) - 1;
int sndcmd = 1;
int ret = 0;
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
uint32_t readlen = ops->len;
uint32_t oobreadlen = ops->ooblen;
uint32_t max_oobsize = ops->mode == MTD_OPS_AUTO_OOB ?
mtd->oobavail : mtd->oobsize;
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
uint8_t *bufpoi, *oob, *buf;
stats = mtd->ecc_stats;
chipnr = (int)(from >> chip->chip_shift);
chip->select_chip(mtd, chipnr);
realpage = (int)(from >> chip->page_shift);
page = realpage & chip->pagemask;
col = (int)(from & (mtd->writesize - 1));
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
buf = ops->datbuf;
oob = ops->oobbuf;
while (1) {
bytes = min(mtd->writesize - col, readlen);
aligned = (bytes == mtd->writesize);
/* Is the current page in the buffer? */
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
if (realpage != chip->pagebuf || oob) {
bufpoi = aligned ? buf : chip->buffers->databuf;
if (likely(sndcmd)) {
chip->cmdfunc(mtd, NAND_CMD_READ0, 0x00, page);
sndcmd = 0;
}
/* Now read the page into the buffer */
if (unlikely(ops->mode == MTD_OPS_RAW))
ret = chip->ecc.read_page_raw(mtd, chip,
bufpoi, page);
else if (!aligned && NAND_SUBPAGE_READ(chip) && !oob)
ret = chip->ecc.read_subpage(mtd, chip,
col, bytes, bufpoi);
else
ret = chip->ecc.read_page(mtd, chip, bufpoi,
page);
if (ret < 0) {
if (!aligned)
/* Invalidate page cache */
chip->pagebuf = -1;
break;
}
/* Transfer not aligned data */
if (!aligned) {
if (!NAND_SUBPAGE_READ(chip) && !oob &&
!(mtd->ecc_stats.failed - stats.failed) &&
(ops->mode != MTD_OPS_RAW))
chip->pagebuf = realpage;
else
/* Invalidate page cache */
chip->pagebuf = -1;
memcpy(buf, chip->buffers->databuf + col, bytes);
}
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
buf += bytes;
if (unlikely(oob)) {
int toread = min(oobreadlen, max_oobsize);
if (toread) {
oob = nand_transfer_oob(chip,
oob, ops, toread);
oobreadlen -= toread;
}
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
}
if (!(chip->options & NAND_NO_READRDY)) {
/*
* Apply delay or wait for ready/busy pin. Do
* this before the AUTOINCR check, so no
* problems arise if a chip which does auto
* increment is marked as NOAUTOINCR by the
* board driver.
*/
if (!chip->dev_ready)
udelay(chip->chip_delay);
else
nand_wait_ready(mtd);
}
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
} else {
memcpy(buf, chip->buffers->databuf + col, bytes);
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
buf += bytes;
}
readlen -= bytes;
if (!readlen)
break;
/* For subsequent reads align to page boundary */
col = 0;
/* Increment page address */
realpage++;
page = realpage & chip->pagemask;
/* Check, if we cross a chip boundary */
if (!page) {
chipnr++;
chip->select_chip(mtd, -1);
chip->select_chip(mtd, chipnr);
}
/*
* Check, if the chip supports auto page increment or if we
* have hit a block boundary.
*/
if (!NAND_CANAUTOINCR(chip) || !(page & blkcheck))
sndcmd = 1;
}
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
ops->retlen = ops->len - (size_t) readlen;
if (oob)
ops->oobretlen = ops->ooblen - oobreadlen;
if (ret)
return ret;
if (mtd->ecc_stats.failed - stats.failed)
return -EBADMSG;
return mtd->ecc_stats.corrected - stats.corrected ? -EUCLEAN : 0;
}
/**
* nand_read - [MTD Interface] MTD compatibility function for nand_do_read_ecc
* @mtd: MTD device structure
* @from: offset to read from
* @len: number of bytes to read
* @retlen: pointer to variable to store the number of read bytes
* @buf: the databuffer to put data
*
* Get hold of the chip and call nand_do_read.
*/
static int nand_read(struct mtd_info *mtd, loff_t from, size_t len,
size_t *retlen, uint8_t *buf)
{
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
struct nand_chip *chip = mtd->priv;
struct mtd_oob_ops ops;
int ret;
/* Do not allow reads past end of device */
if ((from + len) > mtd->size)
return -EINVAL;
if (!len)
return 0;
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
nand_get_device(chip, mtd, FL_READING);
ops.len = len;
ops.datbuf = buf;
ops.oobbuf = NULL;
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
ret = nand_do_read_ops(mtd, from, &ops);
*retlen = ops.retlen;
nand_release_device(mtd);
return ret;
}
/**
* nand_read_oob_std - [REPLACEABLE] the most common OOB data read function
* @mtd: mtd info structure
* @chip: nand chip info structure
* @page: page number to read
* @sndcmd: flag whether to issue read command or not
*/
static int nand_read_oob_std(struct mtd_info *mtd, struct nand_chip *chip,
int page, int sndcmd)
{
if (sndcmd) {
chip->cmdfunc(mtd, NAND_CMD_READOOB, 0, page);
sndcmd = 0;
}
chip->read_buf(mtd, chip->oob_poi, mtd->oobsize);
return sndcmd;
}
/**
* nand_read_oob_syndrome - [REPLACEABLE] OOB data read function for HW ECC
* with syndromes
* @mtd: mtd info structure
* @chip: nand chip info structure
* @page: page number to read
* @sndcmd: flag whether to issue read command or not
*/
static int nand_read_oob_syndrome(struct mtd_info *mtd, struct nand_chip *chip,
int page, int sndcmd)
{
uint8_t *buf = chip->oob_poi;
int length = mtd->oobsize;
int chunk = chip->ecc.bytes + chip->ecc.prepad + chip->ecc.postpad;
int eccsize = chip->ecc.size;
uint8_t *bufpoi = buf;
int i, toread, sndrnd = 0, pos;
chip->cmdfunc(mtd, NAND_CMD_READ0, chip->ecc.size, page);
for (i = 0; i < chip->ecc.steps; i++) {
if (sndrnd) {
pos = eccsize + i * (eccsize + chunk);
if (mtd->writesize > 512)
chip->cmdfunc(mtd, NAND_CMD_RNDOUT, pos, -1);
else
chip->cmdfunc(mtd, NAND_CMD_READ0, pos, page);
} else
sndrnd = 1;
toread = min_t(int, length, chunk);
chip->read_buf(mtd, bufpoi, toread);
bufpoi += toread;
length -= toread;
}
if (length > 0)
chip->read_buf(mtd, bufpoi, length);
return 1;
}
/**
* nand_write_oob_std - [REPLACEABLE] the most common OOB data write function
* @mtd: mtd info structure
* @chip: nand chip info structure
* @page: page number to write
*/
static int nand_write_oob_std(struct mtd_info *mtd, struct nand_chip *chip,
int page)
{
int status = 0;
const uint8_t *buf = chip->oob_poi;
int length = mtd->oobsize;
chip->cmdfunc(mtd, NAND_CMD_SEQIN, mtd->writesize, page);
chip->write_buf(mtd, buf, length);
/* Send command to program the OOB data */
chip->cmdfunc(mtd, NAND_CMD_PAGEPROG, -1, -1);
status = chip->waitfunc(mtd, chip);
return status & NAND_STATUS_FAIL ? -EIO : 0;
}
/**
* nand_write_oob_syndrome - [REPLACEABLE] OOB data write function for HW ECC
* with syndrome - only for large page flash
* @mtd: mtd info structure
* @chip: nand chip info structure
* @page: page number to write
*/
static int nand_write_oob_syndrome(struct mtd_info *mtd,
struct nand_chip *chip, int page)
{
int chunk = chip->ecc.bytes + chip->ecc.prepad + chip->ecc.postpad;
int eccsize = chip->ecc.size, length = mtd->oobsize;
int i, len, pos, status = 0, sndcmd = 0, steps = chip->ecc.steps;
const uint8_t *bufpoi = chip->oob_poi;
/*
* data-ecc-data-ecc ... ecc-oob
* or
* data-pad-ecc-pad-data-pad .... ecc-pad-oob
*/
if (!chip->ecc.prepad && !chip->ecc.postpad) {
pos = steps * (eccsize + chunk);
steps = 0;
} else
pos = eccsize;
chip->cmdfunc(mtd, NAND_CMD_SEQIN, pos, page);
for (i = 0; i < steps; i++) {
if (sndcmd) {
if (mtd->writesize <= 512) {
uint32_t fill = 0xFFFFFFFF;
len = eccsize;
while (len > 0) {
int num = min_t(int, len, 4);
chip->write_buf(mtd, (uint8_t *)&fill,
num);
len -= num;
}
} else {
pos = eccsize + i * (eccsize + chunk);
chip->cmdfunc(mtd, NAND_CMD_RNDIN, pos, -1);
}
} else
sndcmd = 1;
len = min_t(int, length, chunk);
chip->write_buf(mtd, bufpoi, len);
bufpoi += len;
length -= len;
}
if (length > 0)
chip->write_buf(mtd, bufpoi, length);
chip->cmdfunc(mtd, NAND_CMD_PAGEPROG, -1, -1);
status = chip->waitfunc(mtd, chip);
return status & NAND_STATUS_FAIL ? -EIO : 0;
}
/**
* nand_do_read_oob - [INTERN] NAND read out-of-band
* @mtd: MTD device structure
* @from: offset to read from
* @ops: oob operations description structure
*
* NAND read out-of-band data from the spare area.
*/
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
static int nand_do_read_oob(struct mtd_info *mtd, loff_t from,
struct mtd_oob_ops *ops)
{
int page, realpage, chipnr, sndcmd = 1;
struct nand_chip *chip = mtd->priv;
struct mtd_ecc_stats stats;
int blkcheck = (1 << (chip->phys_erase_shift - chip->page_shift)) - 1;
int readlen = ops->ooblen;
int len;
uint8_t *buf = ops->oobbuf;
pr_debug("%s: from = 0x%08Lx, len = %i\n",
__func__, (unsigned long long)from, readlen);
stats = mtd->ecc_stats;
if (ops->mode == MTD_OPS_AUTO_OOB)
len = chip->ecc.layout->oobavail;
else
len = mtd->oobsize;
if (unlikely(ops->ooboffs >= len)) {
pr_debug("%s: attempt to start read outside oob\n",
__func__);
return -EINVAL;
}
/* Do not allow reads past end of device */
if (unlikely(from >= mtd->size ||
ops->ooboffs + readlen > ((mtd->size >> chip->page_shift) -
(from >> chip->page_shift)) * len)) {
pr_debug("%s: attempt to read beyond end of device\n",
__func__);
return -EINVAL;
}
chipnr = (int)(from >> chip->chip_shift);
chip->select_chip(mtd, chipnr);
/* Shift to get page */
realpage = (int)(from >> chip->page_shift);
page = realpage & chip->pagemask;
while (1) {
if (ops->mode == MTD_OPS_RAW)
sndcmd = chip->ecc.read_oob_raw(mtd, chip, page, sndcmd);
else
sndcmd = chip->ecc.read_oob(mtd, chip, page, sndcmd);
len = min(len, readlen);
buf = nand_transfer_oob(chip, buf, ops, len);
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
if (!(chip->options & NAND_NO_READRDY)) {
/*
* Apply delay or wait for ready/busy pin. Do this
* before the AUTOINCR check, so no problems arise if a
* chip which does auto increment is marked as
* NOAUTOINCR by the board driver.
*/
if (!chip->dev_ready)
udelay(chip->chip_delay);
else
nand_wait_ready(mtd);
}
readlen -= len;
if (!readlen)
break;
/* Increment page address */
realpage++;
page = realpage & chip->pagemask;
/* Check, if we cross a chip boundary */
if (!page) {
chipnr++;
chip->select_chip(mtd, -1);
chip->select_chip(mtd, chipnr);
}
/*
* Check, if the chip supports auto page increment or if we
* have hit a block boundary.
*/
if (!NAND_CANAUTOINCR(chip) || !(page & blkcheck))
sndcmd = 1;
}
ops->oobretlen = ops->ooblen;
if (mtd->ecc_stats.failed - stats.failed)
return -EBADMSG;
return mtd->ecc_stats.corrected - stats.corrected ? -EUCLEAN : 0;
}
/**
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
* nand_read_oob - [MTD Interface] NAND read data and/or out-of-band
* @mtd: MTD device structure
* @from: offset to read from
* @ops: oob operation description structure
*
* NAND read data and/or out-of-band data.
*/
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
static int nand_read_oob(struct mtd_info *mtd, loff_t from,
struct mtd_oob_ops *ops)
{
struct nand_chip *chip = mtd->priv;
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
int ret = -ENOTSUPP;
ops->retlen = 0;
/* Do not allow reads past end of device */
if (ops->datbuf && (from + ops->len) > mtd->size) {
pr_debug("%s: attempt to read beyond end of device\n",
__func__);
return -EINVAL;
}
nand_get_device(chip, mtd, FL_READING);
switch (ops->mode) {
case MTD_OPS_PLACE_OOB:
case MTD_OPS_AUTO_OOB:
case MTD_OPS_RAW:
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
break;
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
default:
goto out;
}
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
if (!ops->datbuf)
ret = nand_do_read_oob(mtd, from, ops);
else
ret = nand_do_read_ops(mtd, from, ops);
out:
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
nand_release_device(mtd);
return ret;
}
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
/**
* nand_write_page_raw - [INTERN] raw page write function
* @mtd: mtd info structure
* @chip: nand chip info structure
* @buf: data buffer
*
* Not for syndrome calculating ECC controllers, which use a special oob layout.
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
*/
static void nand_write_page_raw(struct mtd_info *mtd, struct nand_chip *chip,
const uint8_t *buf)
{
chip->write_buf(mtd, buf, mtd->writesize);
chip->write_buf(mtd, chip->oob_poi, mtd->oobsize);
}
/**
* nand_write_page_raw_syndrome - [INTERN] raw page write function
* @mtd: mtd info structure
* @chip: nand chip info structure
* @buf: data buffer
*
* We need a special oob layout and handling even when ECC isn't checked.
*/
static void nand_write_page_raw_syndrome(struct mtd_info *mtd,
struct nand_chip *chip,
const uint8_t *buf)
{
int eccsize = chip->ecc.size;
int eccbytes = chip->ecc.bytes;
uint8_t *oob = chip->oob_poi;
int steps, size;
for (steps = chip->ecc.steps; steps > 0; steps--) {
chip->write_buf(mtd, buf, eccsize);
buf += eccsize;
if (chip->ecc.prepad) {
chip->write_buf(mtd, oob, chip->ecc.prepad);
oob += chip->ecc.prepad;
}
chip->read_buf(mtd, oob, eccbytes);
oob += eccbytes;
if (chip->ecc.postpad) {
chip->write_buf(mtd, oob, chip->ecc.postpad);
oob += chip->ecc.postpad;
}
}
size = mtd->oobsize - (oob - chip->oob_poi);
if (size)
chip->write_buf(mtd, oob, size);
}
/**
* nand_write_page_swecc - [REPLACEABLE] software ECC based page write function
* @mtd: mtd info structure
* @chip: nand chip info structure
* @buf: data buffer
*/
static void nand_write_page_swecc(struct mtd_info *mtd, struct nand_chip *chip,
const uint8_t *buf)
{
int i, eccsize = chip->ecc.size;
int eccbytes = chip->ecc.bytes;
int eccsteps = chip->ecc.steps;
uint8_t *ecc_calc = chip->buffers->ecccalc;
const uint8_t *p = buf;
uint32_t *eccpos = chip->ecc.layout->eccpos;
/* Software ECC calculation */
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
for (i = 0; eccsteps; eccsteps--, i += eccbytes, p += eccsize)
chip->ecc.calculate(mtd, p, &ecc_calc[i]);
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
for (i = 0; i < chip->ecc.total; i++)
chip->oob_poi[eccpos[i]] = ecc_calc[i];
chip->ecc.write_page_raw(mtd, chip, buf);
}
/**
* nand_write_page_hwecc - [REPLACEABLE] hardware ECC based page write function
* @mtd: mtd info structure
* @chip: nand chip info structure
* @buf: data buffer
*/
static void nand_write_page_hwecc(struct mtd_info *mtd, struct nand_chip *chip,
const uint8_t *buf)
{
int i, eccsize = chip->ecc.size;
int eccbytes = chip->ecc.bytes;
int eccsteps = chip->ecc.steps;
uint8_t *ecc_calc = chip->buffers->ecccalc;
const uint8_t *p = buf;
uint32_t *eccpos = chip->ecc.layout->eccpos;
for (i = 0; eccsteps; eccsteps--, i += eccbytes, p += eccsize) {
chip->ecc.hwctl(mtd, NAND_ECC_WRITE);
chip->write_buf(mtd, p, eccsize);
chip->ecc.calculate(mtd, p, &ecc_calc[i]);
}
for (i = 0; i < chip->ecc.total; i++)
chip->oob_poi[eccpos[i]] = ecc_calc[i];
chip->write_buf(mtd, chip->oob_poi, mtd->oobsize);
}
/**
* nand_write_page_syndrome - [REPLACEABLE] hardware ECC syndrome based page write
* @mtd: mtd info structure
* @chip: nand chip info structure
* @buf: data buffer
*
* The hw generator calculates the error syndrome automatically. Therefore we
* need a special oob layout and handling.
*/
static void nand_write_page_syndrome(struct mtd_info *mtd,
struct nand_chip *chip, const uint8_t *buf)
{
int i, eccsize = chip->ecc.size;
int eccbytes = chip->ecc.bytes;
int eccsteps = chip->ecc.steps;
const uint8_t *p = buf;
uint8_t *oob = chip->oob_poi;
for (i = 0; eccsteps; eccsteps--, i += eccbytes, p += eccsize) {
chip->ecc.hwctl(mtd, NAND_ECC_WRITE);
chip->write_buf(mtd, p, eccsize);
if (chip->ecc.prepad) {
chip->write_buf(mtd, oob, chip->ecc.prepad);
oob += chip->ecc.prepad;
}
chip->ecc.calculate(mtd, p, oob);
chip->write_buf(mtd, oob, eccbytes);
oob += eccbytes;
if (chip->ecc.postpad) {
chip->write_buf(mtd, oob, chip->ecc.postpad);
oob += chip->ecc.postpad;
}
}
/* Calculate remaining oob bytes */
i = mtd->oobsize - (oob - chip->oob_poi);
if (i)
chip->write_buf(mtd, oob, i);
}
/**
* nand_write_page - [REPLACEABLE] write one page
* @mtd: MTD device structure
* @chip: NAND chip descriptor
* @buf: the data to write
* @page: page number to write
* @cached: cached programming
* @raw: use _raw version of write_page
*/
static int nand_write_page(struct mtd_info *mtd, struct nand_chip *chip,
const uint8_t *buf, int page, int cached, int raw)
{
int status;
chip->cmdfunc(mtd, NAND_CMD_SEQIN, 0x00, page);
if (unlikely(raw))
chip->ecc.write_page_raw(mtd, chip, buf);
else
chip->ecc.write_page(mtd, chip, buf);
/*
* Cached progamming disabled for now. Not sure if it's worth the
* trouble. The speed gain is not very impressive. (2.3->2.6Mib/s).
*/
cached = 0;
if (!cached || !(chip->options & NAND_CACHEPRG)) {
chip->cmdfunc(mtd, NAND_CMD_PAGEPROG, -1, -1);
status = chip->waitfunc(mtd, chip);
/*
* See if operation failed and additional status checks are
* available.
*/
if ((status & NAND_STATUS_FAIL) && (chip->errstat))
status = chip->errstat(mtd, chip, FL_WRITING, status,
page);
if (status & NAND_STATUS_FAIL)
return -EIO;
} else {
chip->cmdfunc(mtd, NAND_CMD_CACHEDPROG, -1, -1);
status = chip->waitfunc(mtd, chip);
}
#ifdef CONFIG_MTD_NAND_VERIFY_WRITE
/* Send command to read back the data */
chip->cmdfunc(mtd, NAND_CMD_READ0, 0, page);
if (chip->verify_buf(mtd, buf, mtd->writesize))
return -EIO;
#endif
return 0;
}
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
/**
* nand_fill_oob - [INTERN] Transfer client buffer to oob
* @mtd: MTD device structure
* @oob: oob data buffer
* @len: oob data write length
* @ops: oob ops structure
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
*/
static uint8_t *nand_fill_oob(struct mtd_info *mtd, uint8_t *oob, size_t len,
struct mtd_oob_ops *ops)
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
{
struct nand_chip *chip = mtd->priv;
/*
* Initialise to all 0xFF, to avoid the possibility of left over OOB
* data from a previous OOB read.
*/
memset(chip->oob_poi, 0xff, mtd->oobsize);
switch (ops->mode) {
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
case MTD_OPS_PLACE_OOB:
case MTD_OPS_RAW:
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
memcpy(chip->oob_poi + ops->ooboffs, oob, len);
return oob + len;
case MTD_OPS_AUTO_OOB: {
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
struct nand_oobfree *free = chip->ecc.layout->oobfree;
uint32_t boffs = 0, woffs = ops->ooboffs;
size_t bytes = 0;
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
for (; free->length && len; free++, len -= bytes) {
/* Write request not from offset 0? */
if (unlikely(woffs)) {
if (woffs >= free->length) {
woffs -= free->length;
continue;
}
boffs = free->offset + woffs;
bytes = min_t(size_t, len,
(free->length - woffs));
woffs = 0;
} else {
bytes = min_t(size_t, len, free->length);
boffs = free->offset;
}
memcpy(chip->oob_poi + boffs, oob, bytes);
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
oob += bytes;
}
return oob;
}
default:
BUG();
}
return NULL;
}
#define NOTALIGNED(x) ((x & (chip->subpagesize - 1)) != 0)
/**
* nand_do_write_ops - [INTERN] NAND write with ECC
* @mtd: MTD device structure
* @to: offset to write to
* @ops: oob operations description structure
*
* NAND write with ECC.
*/
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
static int nand_do_write_ops(struct mtd_info *mtd, loff_t to,
struct mtd_oob_ops *ops)
{
int chipnr, realpage, page, blockmask, column;
struct nand_chip *chip = mtd->priv;
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
uint32_t writelen = ops->len;
uint32_t oobwritelen = ops->ooblen;
uint32_t oobmaxlen = ops->mode == MTD_OPS_AUTO_OOB ?
mtd->oobavail : mtd->oobsize;
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
uint8_t *oob = ops->oobbuf;
uint8_t *buf = ops->datbuf;
int ret, subpage;
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
ops->retlen = 0;
if (!writelen)
return 0;
/* Reject writes, which are not page aligned */
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
if (NOTALIGNED(to) || NOTALIGNED(ops->len)) {
pr_notice("%s: attempt to write non page aligned data\n",
__func__);
return -EINVAL;
}
column = to & (mtd->writesize - 1);
subpage = column || (writelen & (mtd->writesize - 1));
if (subpage && oob)
return -EINVAL;
chipnr = (int)(to >> chip->chip_shift);
chip->select_chip(mtd, chipnr);
/* Check, if it is write protected */
if (nand_check_wp(mtd))
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
return -EIO;
realpage = (int)(to >> chip->page_shift);
page = realpage & chip->pagemask;
blockmask = (1 << (chip->phys_erase_shift - chip->page_shift)) - 1;
/* Invalidate the page cache, when we write to the cached page */
if (to <= (chip->pagebuf << chip->page_shift) &&
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
(chip->pagebuf << chip->page_shift) < (to + ops->len))
chip->pagebuf = -1;
/* Don't allow multipage oob writes with offset */
if (oob && ops->ooboffs && (ops->ooboffs + ops->ooblen > oobmaxlen))
return -EINVAL;
while (1) {
int bytes = mtd->writesize;
int cached = writelen > bytes && page != blockmask;
uint8_t *wbuf = buf;
/* Partial page write? */
if (unlikely(column || writelen < (mtd->writesize - 1))) {
cached = 0;
bytes = min_t(int, bytes - column, (int) writelen);
chip->pagebuf = -1;
memset(chip->buffers->databuf, 0xff, mtd->writesize);
memcpy(&chip->buffers->databuf[column], buf, bytes);
wbuf = chip->buffers->databuf;
}
if (unlikely(oob)) {
size_t len = min(oobwritelen, oobmaxlen);
oob = nand_fill_oob(mtd, oob, len, ops);
oobwritelen -= len;
} else {
/* We still need to erase leftover OOB data */
memset(chip->oob_poi, 0xff, mtd->oobsize);
}
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
ret = chip->write_page(mtd, chip, wbuf, page, cached,
(ops->mode == MTD_OPS_RAW));
if (ret)
break;
writelen -= bytes;
if (!writelen)
break;
column = 0;
buf += bytes;
realpage++;
page = realpage & chip->pagemask;
/* Check, if we cross a chip boundary */
if (!page) {
chipnr++;
chip->select_chip(mtd, -1);
chip->select_chip(mtd, chipnr);
}
}
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
ops->retlen = ops->len - writelen;
if (unlikely(oob))
ops->oobretlen = ops->ooblen;
return ret;
}
/**
* panic_nand_write - [MTD Interface] NAND write with ECC
* @mtd: MTD device structure
* @to: offset to write to
* @len: number of bytes to write
* @retlen: pointer to variable to store the number of written bytes
* @buf: the data to write
*
* NAND write with ECC. Used when performing writes in interrupt context, this
* may for example be called by mtdoops when writing an oops while in panic.
*/
static int panic_nand_write(struct mtd_info *mtd, loff_t to, size_t len,
size_t *retlen, const uint8_t *buf)
{
struct nand_chip *chip = mtd->priv;
struct mtd_oob_ops ops;
int ret;
/* Do not allow reads past end of device */
if ((to + len) > mtd->size)
return -EINVAL;
if (!len)
return 0;
/* Wait for the device to get ready */
panic_nand_wait(mtd, chip, 400);
/* Grab the device */
panic_nand_get_device(chip, mtd, FL_WRITING);
ops.len = len;
ops.datbuf = (uint8_t *)buf;
ops.oobbuf = NULL;
ret = nand_do_write_ops(mtd, to, &ops);
*retlen = ops.retlen;
return ret;
}
/**
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
* nand_write - [MTD Interface] NAND write with ECC
* @mtd: MTD device structure
* @to: offset to write to
* @len: number of bytes to write
* @retlen: pointer to variable to store the number of written bytes
* @buf: the data to write
*
* NAND write with ECC.
*/
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
static int nand_write(struct mtd_info *mtd, loff_t to, size_t len,
size_t *retlen, const uint8_t *buf)
{
struct nand_chip *chip = mtd->priv;
struct mtd_oob_ops ops;
int ret;
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
/* Do not allow reads past end of device */
if ((to + len) > mtd->size)
return -EINVAL;
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
if (!len)
return 0;
nand_get_device(chip, mtd, FL_WRITING);
ops.len = len;
ops.datbuf = (uint8_t *)buf;
ops.oobbuf = NULL;
ret = nand_do_write_ops(mtd, to, &ops);
*retlen = ops.retlen;
nand_release_device(mtd);
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
return ret;
}
/**
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
* nand_do_write_oob - [MTD Interface] NAND write out-of-band
* @mtd: MTD device structure
* @to: offset to write to
* @ops: oob operation description structure
*
* NAND write out-of-band.
*/
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
static int nand_do_write_oob(struct mtd_info *mtd, loff_t to,
struct mtd_oob_ops *ops)
{
int chipnr, page, status, len;
struct nand_chip *chip = mtd->priv;
pr_debug("%s: to = 0x%08x, len = %i\n",
__func__, (unsigned int)to, (int)ops->ooblen);
if (ops->mode == MTD_OPS_AUTO_OOB)
len = chip->ecc.layout->oobavail;
else
len = mtd->oobsize;
/* Do not allow write past end of page */
if ((ops->ooboffs + ops->ooblen) > len) {
pr_debug("%s: attempt to write past end of page\n",
__func__);
return -EINVAL;
}
if (unlikely(ops->ooboffs >= len)) {
pr_debug("%s: attempt to start write outside oob\n",
__func__);
return -EINVAL;
}
/* Do not allow write past end of device */
if (unlikely(to >= mtd->size ||
ops->ooboffs + ops->ooblen >
((mtd->size >> chip->page_shift) -
(to >> chip->page_shift)) * len)) {
pr_debug("%s: attempt to write beyond end of device\n",
__func__);
return -EINVAL;
}
chipnr = (int)(to >> chip->chip_shift);
chip->select_chip(mtd, chipnr);
/* Shift to get page */
page = (int)(to >> chip->page_shift);
/*
* Reset the chip. Some chips (like the Toshiba TC5832DC found in one
* of my DiskOnChip 2000 test units) will clear the whole data page too
* if we don't do this. I have no clue why, but I seem to have 'fixed'
* it in the doc2000 driver in August 1999. dwmw2.
*/
chip->cmdfunc(mtd, NAND_CMD_RESET, -1, -1);
/* Check, if it is write protected */
if (nand_check_wp(mtd))
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
return -EROFS;
/* Invalidate the page cache, if we write to the cached page */
if (page == chip->pagebuf)
chip->pagebuf = -1;
nand_fill_oob(mtd, ops->oobbuf, ops->ooblen, ops);
if (ops->mode == MTD_OPS_RAW)
status = chip->ecc.write_oob_raw(mtd, chip, page & chip->pagemask);
else
status = chip->ecc.write_oob(mtd, chip, page & chip->pagemask);
if (status)
return status;
ops->oobretlen = ops->ooblen;
return 0;
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
}
/**
* nand_write_oob - [MTD Interface] NAND write data and/or out-of-band
* @mtd: MTD device structure
* @to: offset to write to
* @ops: oob operation description structure
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
*/
static int nand_write_oob(struct mtd_info *mtd, loff_t to,
struct mtd_oob_ops *ops)
{
struct nand_chip *chip = mtd->priv;
int ret = -ENOTSUPP;
ops->retlen = 0;
/* Do not allow writes past end of device */
if (ops->datbuf && (to + ops->len) > mtd->size) {
pr_debug("%s: attempt to write beyond end of device\n",
__func__);
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
return -EINVAL;
}
nand_get_device(chip, mtd, FL_WRITING);
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
switch (ops->mode) {
case MTD_OPS_PLACE_OOB:
case MTD_OPS_AUTO_OOB:
case MTD_OPS_RAW:
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
break;
default:
goto out;
}
if (!ops->datbuf)
ret = nand_do_write_oob(mtd, to, ops);
else
ret = nand_do_write_ops(mtd, to, ops);
out:
nand_release_device(mtd);
return ret;
}
/**
* single_erase_cmd - [GENERIC] NAND standard block erase command function
* @mtd: MTD device structure
* @page: the page address of the block which will be erased
*
* Standard erase command for NAND chips.
*/
static void single_erase_cmd(struct mtd_info *mtd, int page)
{
struct nand_chip *chip = mtd->priv;
/* Send commands to erase a block */
chip->cmdfunc(mtd, NAND_CMD_ERASE1, -1, page);
chip->cmdfunc(mtd, NAND_CMD_ERASE2, -1, -1);
}
/**
* multi_erase_cmd - [GENERIC] AND specific block erase command function
* @mtd: MTD device structure
* @page: the page address of the block which will be erased
*
* AND multi block erase command function. Erase 4 consecutive blocks.
*/
static void multi_erase_cmd(struct mtd_info *mtd, int page)
{
struct nand_chip *chip = mtd->priv;
/* Send commands to erase a block */
chip->cmdfunc(mtd, NAND_CMD_ERASE1, -1, page++);
chip->cmdfunc(mtd, NAND_CMD_ERASE1, -1, page++);
chip->cmdfunc(mtd, NAND_CMD_ERASE1, -1, page++);
chip->cmdfunc(mtd, NAND_CMD_ERASE1, -1, page);
chip->cmdfunc(mtd, NAND_CMD_ERASE2, -1, -1);
}
/**
* nand_erase - [MTD Interface] erase block(s)
* @mtd: MTD device structure
* @instr: erase instruction
*
* Erase one ore more blocks.
*/
static int nand_erase(struct mtd_info *mtd, struct erase_info *instr)
{
return nand_erase_nand(mtd, instr, 0);
}
#define BBT_PAGE_MASK 0xffffff3f
/**
* nand_erase_nand - [INTERN] erase block(s)
* @mtd: MTD device structure
* @instr: erase instruction
* @allowbbt: allow erasing the bbt area
*
* Erase one ore more blocks.
*/
int nand_erase_nand(struct mtd_info *mtd, struct erase_info *instr,
int allowbbt)
{
int page, status, pages_per_block, ret, chipnr;
struct nand_chip *chip = mtd->priv;
loff_t rewrite_bbt[NAND_MAX_CHIPS] = {0};
unsigned int bbt_masked_page = 0xffffffff;
loff_t len;
pr_debug("%s: start = 0x%012llx, len = %llu\n",
__func__, (unsigned long long)instr->addr,
(unsigned long long)instr->len);
if (check_offs_len(mtd, instr->addr, instr->len))
return -EINVAL;
instr->fail_addr = MTD_FAIL_ADDR_UNKNOWN;
/* Grab the lock and see if the device is available */
nand_get_device(chip, mtd, FL_ERASING);
/* Shift to get first page */
page = (int)(instr->addr >> chip->page_shift);
chipnr = (int)(instr->addr >> chip->chip_shift);
/* Calculate pages in each block */
pages_per_block = 1 << (chip->phys_erase_shift - chip->page_shift);
/* Select the NAND device */
chip->select_chip(mtd, chipnr);
/* Check, if it is write protected */
if (nand_check_wp(mtd)) {
pr_debug("%s: device is write protected!\n",
__func__);
instr->state = MTD_ERASE_FAILED;
goto erase_exit;
}
/*
* If BBT requires refresh, set the BBT page mask to see if the BBT
* should be rewritten. Otherwise the mask is set to 0xffffffff which
* can not be matched. This is also done when the bbt is actually
* erased to avoid recursive updates.
*/
if (chip->options & BBT_AUTO_REFRESH && !allowbbt)
bbt_masked_page = chip->bbt_td->pages[chipnr] & BBT_PAGE_MASK;
/* Loop through the pages */
len = instr->len;
instr->state = MTD_ERASING;
while (len) {
/* Heck if we have a bad block, we do not erase bad blocks! */
if (nand_block_checkbad(mtd, ((loff_t) page) <<
chip->page_shift, 0, allowbbt)) {
pr_warn("%s: attempt to erase a bad block at page 0x%08x\n",
__func__, page);
instr->state = MTD_ERASE_FAILED;
goto erase_exit;
}
/*
* Invalidate the page cache, if we erase the block which
* contains the current cached page.
*/
if (page <= chip->pagebuf && chip->pagebuf <
(page + pages_per_block))
chip->pagebuf = -1;
chip->erase_cmd(mtd, page & chip->pagemask);
status = chip->waitfunc(mtd, chip);
/*
* See if operation failed and additional status checks are
* available
*/
if ((status & NAND_STATUS_FAIL) && (chip->errstat))
status = chip->errstat(mtd, chip, FL_ERASING,
status, page);
/* See if block erase succeeded */
if (status & NAND_STATUS_FAIL) {
pr_debug("%s: failed erase, page 0x%08x\n",
__func__, page);
instr->state = MTD_ERASE_FAILED;
instr->fail_addr =
((loff_t)page << chip->page_shift);
goto erase_exit;
}
/*
* If BBT requires refresh, set the BBT rewrite flag to the
* page being erased.
*/
if (bbt_masked_page != 0xffffffff &&
(page & BBT_PAGE_MASK) == bbt_masked_page)
rewrite_bbt[chipnr] =
((loff_t)page << chip->page_shift);
/* Increment page address and decrement length */
len -= (1 << chip->phys_erase_shift);
page += pages_per_block;
/* Check, if we cross a chip boundary */
if (len && !(page & chip->pagemask)) {
chipnr++;
chip->select_chip(mtd, -1);
chip->select_chip(mtd, chipnr);
/*
* If BBT requires refresh and BBT-PERCHIP, set the BBT
* page mask to see if this BBT should be rewritten.
*/
if (bbt_masked_page != 0xffffffff &&
(chip->bbt_td->options & NAND_BBT_PERCHIP))
bbt_masked_page = chip->bbt_td->pages[chipnr] &
BBT_PAGE_MASK;
}
}
instr->state = MTD_ERASE_DONE;
erase_exit:
ret = instr->state == MTD_ERASE_DONE ? 0 : -EIO;
/* Deselect and wake up anyone waiting on the device */
nand_release_device(mtd);
/* Do call back function */
if (!ret)
mtd_erase_callback(instr);
/*
* If BBT requires refresh and erase was successful, rewrite any
* selected bad block tables.
*/
if (bbt_masked_page == 0xffffffff || ret)
return ret;
for (chipnr = 0; chipnr < chip->numchips; chipnr++) {
if (!rewrite_bbt[chipnr])
continue;
/* Update the BBT for chip */
pr_debug("%s: nand_update_bbt (%d:0x%0llx 0x%0x)\n",
__func__, chipnr, rewrite_bbt[chipnr],
chip->bbt_td->pages[chipnr]);
nand_update_bbt(mtd, rewrite_bbt[chipnr]);
}
/* Return more or less happy */
return ret;
}
/**
* nand_sync - [MTD Interface] sync
* @mtd: MTD device structure
*
* Sync is actually a wait for chip ready function.
*/
static void nand_sync(struct mtd_info *mtd)
{
struct nand_chip *chip = mtd->priv;
pr_debug("%s: called\n", __func__);
/* Grab the lock and see if the device is available */
nand_get_device(chip, mtd, FL_SYNCING);
/* Release it and go back */
nand_release_device(mtd);
}
/**
* nand_block_isbad - [MTD Interface] Check if block at offset is bad
* @mtd: MTD device structure
* @offs: offset relative to mtd start
*/
static int nand_block_isbad(struct mtd_info *mtd, loff_t offs)
{
/* Check for invalid offset */
if (offs > mtd->size)
return -EINVAL;
return nand_block_checkbad(mtd, offs, 1, 0);
}
/**
* nand_block_markbad - [MTD Interface] Mark block at the given offset as bad
* @mtd: MTD device structure
* @ofs: offset relative to mtd start
*/
static int nand_block_markbad(struct mtd_info *mtd, loff_t ofs)
{
struct nand_chip *chip = mtd->priv;
int ret;
ret = nand_block_isbad(mtd, ofs);
if (ret) {
/* If it was bad already, return success and do nothing */
if (ret > 0)
return 0;
return ret;
}
return chip->block_markbad(mtd, ofs);
}
/**
* nand_suspend - [MTD Interface] Suspend the NAND flash
* @mtd: MTD device structure
*/
static int nand_suspend(struct mtd_info *mtd)
{
struct nand_chip *chip = mtd->priv;
return nand_get_device(chip, mtd, FL_PM_SUSPENDED);
}
/**
* nand_resume - [MTD Interface] Resume the NAND flash
* @mtd: MTD device structure
*/
static void nand_resume(struct mtd_info *mtd)
{
struct nand_chip *chip = mtd->priv;
if (chip->state == FL_PM_SUSPENDED)
nand_release_device(mtd);
else
pr_err("%s called for a chip which is not in suspended state\n",
__func__);
}
/* Set default functions */
static void nand_set_defaults(struct nand_chip *chip, int busw)
{
/* check for proper chip_delay setup, set 20us if not */
if (!chip->chip_delay)
chip->chip_delay = 20;
/* check, if a user supplied command function given */
if (chip->cmdfunc == NULL)
chip->cmdfunc = nand_command;
/* check, if a user supplied wait function given */
if (chip->waitfunc == NULL)
chip->waitfunc = nand_wait;
if (!chip->select_chip)
chip->select_chip = nand_select_chip;
if (!chip->read_byte)
chip->read_byte = busw ? nand_read_byte16 : nand_read_byte;
if (!chip->read_word)
chip->read_word = nand_read_word;
if (!chip->block_bad)
chip->block_bad = nand_block_bad;
if (!chip->block_markbad)
chip->block_markbad = nand_default_block_markbad;
if (!chip->write_buf)
chip->write_buf = busw ? nand_write_buf16 : nand_write_buf;
if (!chip->read_buf)
chip->read_buf = busw ? nand_read_buf16 : nand_read_buf;
if (!chip->verify_buf)
chip->verify_buf = busw ? nand_verify_buf16 : nand_verify_buf;
if (!chip->scan_bbt)
chip->scan_bbt = nand_default_bbt;
if (!chip->controller) {
chip->controller = &chip->hwcontrol;
spin_lock_init(&chip->controller->lock);
init_waitqueue_head(&chip->controller->wq);
}
}
/* Sanitize ONFI strings so we can safely print them */
static void sanitize_string(uint8_t *s, size_t len)
{
ssize_t i;
/* Null terminate */
s[len - 1] = 0;
/* Remove non printable chars */
for (i = 0; i < len - 1; i++) {
if (s[i] < ' ' || s[i] > 127)
s[i] = '?';
}
/* Remove trailing spaces */
strim(s);
}
static u16 onfi_crc16(u16 crc, u8 const *p, size_t len)
{
int i;
while (len--) {
crc ^= *p++ << 8;
for (i = 0; i < 8; i++)
crc = (crc << 1) ^ ((crc & 0x8000) ? 0x8005 : 0);
}
return crc;
}
/*
* Check if the NAND chip is ONFI compliant, returns 1 if it is, 0 otherwise.
*/
static int nand_flash_detect_onfi(struct mtd_info *mtd, struct nand_chip *chip,
int *busw)
{
struct nand_onfi_params *p = &chip->onfi_params;
int i;
int val;
/* Try ONFI for unknown chip or LP */
chip->cmdfunc(mtd, NAND_CMD_READID, 0x20, -1);
if (chip->read_byte(mtd) != 'O' || chip->read_byte(mtd) != 'N' ||
chip->read_byte(mtd) != 'F' || chip->read_byte(mtd) != 'I')
return 0;
pr_info("ONFI flash detected\n");
chip->cmdfunc(mtd, NAND_CMD_PARAM, 0, -1);
for (i = 0; i < 3; i++) {
chip->read_buf(mtd, (uint8_t *)p, sizeof(*p));
if (onfi_crc16(ONFI_CRC_BASE, (uint8_t *)p, 254) ==
le16_to_cpu(p->crc)) {
pr_info("ONFI param page %d valid\n", i);
break;
}
}
if (i == 3)
return 0;
/* Check version */
val = le16_to_cpu(p->revision);
if (val & (1 << 5))
chip->onfi_version = 23;
else if (val & (1 << 4))
chip->onfi_version = 22;
else if (val & (1 << 3))
chip->onfi_version = 21;
else if (val & (1 << 2))
chip->onfi_version = 20;
else if (val & (1 << 1))
chip->onfi_version = 10;
else
chip->onfi_version = 0;
if (!chip->onfi_version) {
pr_info("%s: unsupported ONFI version: %d\n", __func__, val);
return 0;
}
sanitize_string(p->manufacturer, sizeof(p->manufacturer));
sanitize_string(p->model, sizeof(p->model));
if (!mtd->name)
mtd->name = p->model;
mtd->writesize = le32_to_cpu(p->byte_per_page);
mtd->erasesize = le32_to_cpu(p->pages_per_block) * mtd->writesize;
mtd->oobsize = le16_to_cpu(p->spare_bytes_per_page);
chip->chipsize = (uint64_t)le32_to_cpu(p->blocks_per_lun) * mtd->erasesize;
*busw = 0;
if (le16_to_cpu(p->features) & 1)
*busw = NAND_BUSWIDTH_16;
chip->options &= ~NAND_CHIPOPTIONS_MSK;
chip->options |= (NAND_NO_READRDY |
NAND_NO_AUTOINCR) & NAND_CHIPOPTIONS_MSK;
return 1;
}
/*
* Get the flash and manufacturer id and lookup if the type is supported.
*/
static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd,
struct nand_chip *chip,
int busw,
int *maf_id, int *dev_id,
struct nand_flash_dev *type)
{
int i, maf_idx;
u8 id_data[8];
int ret;
/* Select the device */
chip->select_chip(mtd, 0);
/*
* Reset the chip, required by some chips (e.g. Micron MT29FxGxxxxx)
* after power-up.
*/
chip->cmdfunc(mtd, NAND_CMD_RESET, -1, -1);
/* Send the command for reading device ID */
chip->cmdfunc(mtd, NAND_CMD_READID, 0x00, -1);
/* Read manufacturer and device IDs */
*maf_id = chip->read_byte(mtd);
*dev_id = chip->read_byte(mtd);
/*
* Try again to make sure, as some systems the bus-hold or other
* interface concerns can cause random data which looks like a
* possibly credible NAND flash to appear. If the two results do
* not match, ignore the device completely.
*/
chip->cmdfunc(mtd, NAND_CMD_READID, 0x00, -1);
for (i = 0; i < 2; i++)
id_data[i] = chip->read_byte(mtd);
if (id_data[0] != *maf_id || id_data[1] != *dev_id) {
pr_info("%s: second ID read did not match "
"%02x,%02x against %02x,%02x\n", __func__,
*maf_id, *dev_id, id_data[0], id_data[1]);
return ERR_PTR(-ENODEV);
}
if (!type)
type = nand_flash_ids;
for (; type->name != NULL; type++)
if (*dev_id == type->id)
break;
chip->onfi_version = 0;
if (!type->name || !type->pagesize) {
/* Check is chip is ONFI compliant */
ret = nand_flash_detect_onfi(mtd, chip, &busw);
if (ret)
goto ident_done;
}
chip->cmdfunc(mtd, NAND_CMD_READID, 0x00, -1);
/* Read entire ID string */
for (i = 0; i < 8; i++)
id_data[i] = chip->read_byte(mtd);
if (!type->name)
return ERR_PTR(-ENODEV);
if (!mtd->name)
mtd->name = type->name;
chip->chipsize = (uint64_t)type->chipsize << 20;
if (!type->pagesize && chip->init_size) {
/* Set the pagesize, oobsize, erasesize by the driver */
busw = chip->init_size(mtd, chip, id_data);
} else if (!type->pagesize) {
int extid;
/* The 3rd id byte holds MLC / multichip data */
chip->cellinfo = id_data[2];
/* The 4th id byte is the important one */
extid = id_data[3];
/*
* Field definitions are in the following datasheets:
* Old style (4,5 byte ID): Samsung K9GAG08U0M (p.32)
* New style (6 byte ID): Samsung K9GBG08U0M (p.40)
*
* Check for wraparound + Samsung ID + nonzero 6th byte
* to decide what to do.
*/
if (id_data[0] == id_data[6] && id_data[1] == id_data[7] &&
id_data[0] == NAND_MFR_SAMSUNG &&
(chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
id_data[5] != 0x00) {
/* Calc pagesize */
mtd->writesize = 2048 << (extid & 0x03);
extid >>= 2;
/* Calc oobsize */
switch (extid & 0x03) {
case 1:
mtd->oobsize = 128;
break;
case 2:
mtd->oobsize = 218;
break;
case 3:
mtd->oobsize = 400;
break;
default:
mtd->oobsize = 436;
break;
}
extid >>= 2;
/* Calc blocksize */
mtd->erasesize = (128 * 1024) <<
(((extid >> 1) & 0x04) | (extid & 0x03));
busw = 0;
} else {
/* Calc pagesize */
mtd->writesize = 1024 << (extid & 0x03);
extid >>= 2;
/* Calc oobsize */
mtd->oobsize = (8 << (extid & 0x01)) *
(mtd->writesize >> 9);
extid >>= 2;
/* Calc blocksize. Blocksize is multiples of 64KiB */
mtd->erasesize = (64 * 1024) << (extid & 0x03);
extid >>= 2;
/* Get buswidth information */
busw = (extid & 0x01) ? NAND_BUSWIDTH_16 : 0;
}
} else {
/*
* Old devices have chip data hardcoded in the device id table.
*/
mtd->erasesize = type->erasesize;
mtd->writesize = type->pagesize;
mtd->oobsize = mtd->writesize / 32;
busw = type->options & NAND_BUSWIDTH_16;
/*
* Check for Spansion/AMD ID + repeating 5th, 6th byte since
* some Spansion chips have erasesize that conflicts with size
* listed in nand_ids table.
* Data sheet (5 byte ID): Spansion S30ML-P ORNAND (p.39)
*/
if (*maf_id == NAND_MFR_AMD && id_data[4] != 0x00 &&
id_data[5] == 0x00 && id_data[6] == 0x00 &&
id_data[7] == 0x00 && mtd->writesize == 512) {
mtd->erasesize = 128 * 1024;
mtd->erasesize <<= ((id_data[3] & 0x03) << 1);
}
}
/* Get chip options, preserve non chip based options */
chip->options &= ~NAND_CHIPOPTIONS_MSK;
chip->options |= type->options & NAND_CHIPOPTIONS_MSK;
/*
* Check if chip is not a Samsung device. Do not clear the
* options for chips which do not have an extended id.
*/
if (*maf_id != NAND_MFR_SAMSUNG && !type->pagesize)
chip->options &= ~NAND_SAMSUNG_LP_OPTIONS;
ident_done:
/*
* Set chip as a default. Board drivers can override it, if necessary.
*/
chip->options |= NAND_NO_AUTOINCR;
/* Try to identify manufacturer */
for (maf_idx = 0; nand_manuf_ids[maf_idx].id != 0x0; maf_idx++) {
if (nand_manuf_ids[maf_idx].id == *maf_id)
break;
}
/*
* Check, if buswidth is correct. Hardware drivers should set
* chip correct!
*/
if (busw != (chip->options & NAND_BUSWIDTH_16)) {
pr_info("NAND device: Manufacturer ID:"
" 0x%02x, Chip ID: 0x%02x (%s %s)\n", *maf_id,
*dev_id, nand_manuf_ids[maf_idx].name, mtd->name);
pr_warn("NAND bus width %d instead %d bit\n",
(chip->options & NAND_BUSWIDTH_16) ? 16 : 8,
busw ? 16 : 8);
return ERR_PTR(-EINVAL);
}
/* Calculate the address shift from the page size */
chip->page_shift = ffs(mtd->writesize) - 1;
/* Convert chipsize to number of pages per chip -1 */
chip->pagemask = (chip->chipsize >> chip->page_shift) - 1;
chip->bbt_erase_shift = chip->phys_erase_shift =
ffs(mtd->erasesize) - 1;
if (chip->chipsize & 0xffffffff)
chip->chip_shift = ffs((unsigned)chip->chipsize) - 1;
else {
chip->chip_shift = ffs((unsigned)(chip->chipsize >> 32));
chip->chip_shift += 32 - 1;
}
chip->badblockbits = 8;
/* Set the bad block position */
if (mtd->writesize > 512 || (busw & NAND_BUSWIDTH_16))
chip->badblockpos = NAND_LARGE_BADBLOCK_POS;
else
chip->badblockpos = NAND_SMALL_BADBLOCK_POS;
mtd: nand: support alternate BB marker locations on MLC This is a slightly modified version of a patch submitted last year by Reuben Dowle <reuben.dowle@navico.com>. His original comments follow: This patch adds support for some MLC NAND flashes that place the BB marker in the LAST page of the bad block rather than the FIRST page used for SLC NAND and other types of MLC nand. Lifted from Samsung datasheet for K9LG8G08U0A (1Gbyte MLC NAND): " Identifying Initial Invalid Block(s) All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The initial invalid block(s) status is defined by the 1st byte in the spare area. Samsung makes sure that the last page of every initial invalid block has non-FFh data at the column address of 2,048. ... " As far as I can tell, this is the same for all Samsung MLC nand, and in fact the samsung bsp for the processor used in our project (s3c6410) actually contained a hack similar to this patch but less portable to enable use of their NAND parts. I discovered this problem when trying to use a Micron NAND which does not used this layout - I wish samsung would put their stuff in main-line to avoid this type of problem. Currently this patch causes all MLC nand with manufacturer codes from Samsung and ST(Numonyx) to use this alternative location, since these are the manufactures that I know of that use this layout. Signed-off-by: Kevin Cernekee <cernekee@gmail.com> Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
2010-05-05 10:58:10 +07:00
/*
* Bad block marker is stored in the last page of each block
* on Samsung and Hynix MLC devices; stored in first two pages
* of each block on Micron devices with 2KiB pages and on
* SLC Samsung, Hynix, Toshiba and AMD/Spansion. All others scan
* only the first page.
mtd: nand: support alternate BB marker locations on MLC This is a slightly modified version of a patch submitted last year by Reuben Dowle <reuben.dowle@navico.com>. His original comments follow: This patch adds support for some MLC NAND flashes that place the BB marker in the LAST page of the bad block rather than the FIRST page used for SLC NAND and other types of MLC nand. Lifted from Samsung datasheet for K9LG8G08U0A (1Gbyte MLC NAND): " Identifying Initial Invalid Block(s) All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The initial invalid block(s) status is defined by the 1st byte in the spare area. Samsung makes sure that the last page of every initial invalid block has non-FFh data at the column address of 2,048. ... " As far as I can tell, this is the same for all Samsung MLC nand, and in fact the samsung bsp for the processor used in our project (s3c6410) actually contained a hack similar to this patch but less portable to enable use of their NAND parts. I discovered this problem when trying to use a Micron NAND which does not used this layout - I wish samsung would put their stuff in main-line to avoid this type of problem. Currently this patch causes all MLC nand with manufacturer codes from Samsung and ST(Numonyx) to use this alternative location, since these are the manufactures that I know of that use this layout. Signed-off-by: Kevin Cernekee <cernekee@gmail.com> Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
2010-05-05 10:58:10 +07:00
*/
if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
(*maf_id == NAND_MFR_SAMSUNG ||
*maf_id == NAND_MFR_HYNIX))
chip->bbt_options |= NAND_BBT_SCANLASTPAGE;
else if ((!(chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
(*maf_id == NAND_MFR_SAMSUNG ||
*maf_id == NAND_MFR_HYNIX ||
*maf_id == NAND_MFR_TOSHIBA ||
*maf_id == NAND_MFR_AMD)) ||
(mtd->writesize == 2048 &&
*maf_id == NAND_MFR_MICRON))
chip->bbt_options |= NAND_BBT_SCAN2NDPAGE;
/* Check for AND chips with 4 page planes */
if (chip->options & NAND_4PAGE_ARRAY)
chip->erase_cmd = multi_erase_cmd;
else
chip->erase_cmd = single_erase_cmd;
/* Do not replace user supplied command function! */
if (mtd->writesize > 512 && chip->cmdfunc == nand_command)
chip->cmdfunc = nand_command_lp;
pr_info("NAND device: Manufacturer ID:"
" 0x%02x, Chip ID: 0x%02x (%s %s)\n", *maf_id, *dev_id,
nand_manuf_ids[maf_idx].name,
chip->onfi_version ? chip->onfi_params.model : type->name);
return type;
}
/**
* nand_scan_ident - [NAND Interface] Scan for the NAND device
* @mtd: MTD device structure
* @maxchips: number of chips to scan for
* @table: alternative NAND ID table
*
* This is the first phase of the normal nand_scan() function. It reads the
* flash ID and sets up MTD fields accordingly.
*
* The mtd->owner field must be set to the module of the caller.
*/
int nand_scan_ident(struct mtd_info *mtd, int maxchips,
struct nand_flash_dev *table)
{
int i, busw, nand_maf_id, nand_dev_id;
struct nand_chip *chip = mtd->priv;
struct nand_flash_dev *type;
/* Get buswidth to select the correct functions */
busw = chip->options & NAND_BUSWIDTH_16;
/* Set the default functions */
nand_set_defaults(chip, busw);
/* Read the flash type */
type = nand_get_flash_type(mtd, chip, busw,
&nand_maf_id, &nand_dev_id, table);
if (IS_ERR(type)) {
if (!(chip->options & NAND_SCAN_SILENT_NODEV))
pr_warn("No NAND device found\n");
chip->select_chip(mtd, -1);
return PTR_ERR(type);
}
/* Check for a chip array */
for (i = 1; i < maxchips; i++) {
chip->select_chip(mtd, i);
/* See comment in nand_get_flash_type for reset */
chip->cmdfunc(mtd, NAND_CMD_RESET, -1, -1);
/* Send the command for reading device ID */
chip->cmdfunc(mtd, NAND_CMD_READID, 0x00, -1);
/* Read manufacturer and device IDs */
if (nand_maf_id != chip->read_byte(mtd) ||
nand_dev_id != chip->read_byte(mtd))
break;
}
if (i > 1)
pr_info("%d NAND chips detected\n", i);
/* Store the number of chips and calc total size for mtd */
chip->numchips = i;
mtd->size = i * chip->chipsize;
return 0;
}
EXPORT_SYMBOL(nand_scan_ident);
/**
* nand_scan_tail - [NAND Interface] Scan for the NAND device
* @mtd: MTD device structure
*
* This is the second phase of the normal nand_scan() function. It fills out
* all the uninitialized function pointers with the defaults and scans for a
* bad block table if appropriate.
*/
int nand_scan_tail(struct mtd_info *mtd)
{
int i;
struct nand_chip *chip = mtd->priv;
if (!(chip->options & NAND_OWN_BUFFERS))
chip->buffers = kmalloc(sizeof(*chip->buffers), GFP_KERNEL);
if (!chip->buffers)
return -ENOMEM;
/* Set the internal oob buffer location, just after the page data */
chip->oob_poi = chip->buffers->databuf + mtd->writesize;
/*
* If no default placement scheme is given, select an appropriate one.
*/
if (!chip->ecc.layout && (chip->ecc.mode != NAND_ECC_SOFT_BCH)) {
switch (mtd->oobsize) {
case 8:
chip->ecc.layout = &nand_oob_8;
break;
case 16:
chip->ecc.layout = &nand_oob_16;
break;
case 64:
chip->ecc.layout = &nand_oob_64;
break;
case 128:
chip->ecc.layout = &nand_oob_128;
break;
default:
pr_warn("No oob scheme defined for oobsize %d\n",
mtd->oobsize);
BUG();
}
}
if (!chip->write_page)
chip->write_page = nand_write_page;
/*
* Check ECC mode, default to software if 3byte/512byte hardware ECC is
* selected and we have 256 byte pagesize fallback to software ECC
*/
switch (chip->ecc.mode) {
case NAND_ECC_HW_OOB_FIRST:
/* Similar to NAND_ECC_HW, but a separate read_page handle */
if (!chip->ecc.calculate || !chip->ecc.correct ||
!chip->ecc.hwctl) {
pr_warn("No ECC functions supplied; "
"hardware ECC not possible\n");
BUG();
}
if (!chip->ecc.read_page)
chip->ecc.read_page = nand_read_page_hwecc_oob_first;
case NAND_ECC_HW:
/* Use standard hwecc read page function? */
if (!chip->ecc.read_page)
chip->ecc.read_page = nand_read_page_hwecc;
if (!chip->ecc.write_page)
chip->ecc.write_page = nand_write_page_hwecc;
if (!chip->ecc.read_page_raw)
chip->ecc.read_page_raw = nand_read_page_raw;
if (!chip->ecc.write_page_raw)
chip->ecc.write_page_raw = nand_write_page_raw;
if (!chip->ecc.read_oob)
chip->ecc.read_oob = nand_read_oob_std;
if (!chip->ecc.write_oob)
chip->ecc.write_oob = nand_write_oob_std;
case NAND_ECC_HW_SYNDROME:
if ((!chip->ecc.calculate || !chip->ecc.correct ||
!chip->ecc.hwctl) &&
(!chip->ecc.read_page ||
chip->ecc.read_page == nand_read_page_hwecc ||
!chip->ecc.write_page ||
chip->ecc.write_page == nand_write_page_hwecc)) {
pr_warn("No ECC functions supplied; "
"hardware ECC not possible\n");
BUG();
}
/* Use standard syndrome read/write page function? */
if (!chip->ecc.read_page)
chip->ecc.read_page = nand_read_page_syndrome;
if (!chip->ecc.write_page)
chip->ecc.write_page = nand_write_page_syndrome;
if (!chip->ecc.read_page_raw)
chip->ecc.read_page_raw = nand_read_page_raw_syndrome;
if (!chip->ecc.write_page_raw)
chip->ecc.write_page_raw = nand_write_page_raw_syndrome;
if (!chip->ecc.read_oob)
chip->ecc.read_oob = nand_read_oob_syndrome;
if (!chip->ecc.write_oob)
chip->ecc.write_oob = nand_write_oob_syndrome;
if (mtd->writesize >= chip->ecc.size)
break;
pr_warn("%d byte HW ECC not possible on "
"%d byte page size, fallback to SW ECC\n",
chip->ecc.size, mtd->writesize);
chip->ecc.mode = NAND_ECC_SOFT;
case NAND_ECC_SOFT:
chip->ecc.calculate = nand_calculate_ecc;
chip->ecc.correct = nand_correct_data;
chip->ecc.read_page = nand_read_page_swecc;
chip->ecc.read_subpage = nand_read_subpage;
chip->ecc.write_page = nand_write_page_swecc;
chip->ecc.read_page_raw = nand_read_page_raw;
chip->ecc.write_page_raw = nand_write_page_raw;
chip->ecc.read_oob = nand_read_oob_std;
chip->ecc.write_oob = nand_write_oob_std;
if (!chip->ecc.size)
chip->ecc.size = 256;
chip->ecc.bytes = 3;
break;
case NAND_ECC_SOFT_BCH:
if (!mtd_nand_has_bch()) {
pr_warn("CONFIG_MTD_ECC_BCH not enabled\n");
BUG();
}
chip->ecc.calculate = nand_bch_calculate_ecc;
chip->ecc.correct = nand_bch_correct_data;
chip->ecc.read_page = nand_read_page_swecc;
chip->ecc.read_subpage = nand_read_subpage;
chip->ecc.write_page = nand_write_page_swecc;
chip->ecc.read_page_raw = nand_read_page_raw;
chip->ecc.write_page_raw = nand_write_page_raw;
chip->ecc.read_oob = nand_read_oob_std;
chip->ecc.write_oob = nand_write_oob_std;
/*
* Board driver should supply ecc.size and ecc.bytes values to
* select how many bits are correctable; see nand_bch_init()
* for details. Otherwise, default to 4 bits for large page
* devices.
*/
if (!chip->ecc.size && (mtd->oobsize >= 64)) {
chip->ecc.size = 512;
chip->ecc.bytes = 7;
}
chip->ecc.priv = nand_bch_init(mtd,
chip->ecc.size,
chip->ecc.bytes,
&chip->ecc.layout);
if (!chip->ecc.priv) {
pr_warn("BCH ECC initialization failed!\n");
BUG();
}
break;
case NAND_ECC_NONE:
pr_warn("NAND_ECC_NONE selected by board driver. "
"This is not recommended!\n");
[MTD] Rework the out of band handling completely Hopefully the last iteration on this! The handling of out of band data on NAND was accompanied by tons of fruitless discussions and halfarsed patches to make it work for a particular problem. Sufficiently annoyed by I all those "I know it better" mails and the resonable amount of discarded "it solves my problem" patches, I finally decided to go for the big rework. After removing the _ecc variants of mtd read/write functions the solution to satisfy the various requirements was to refactor the read/write _oob functions in mtd. The major change is that read/write_oob now takes a pointer to an operation descriptor structure "struct mtd_oob_ops".instead of having a function with at least seven arguments. read/write_oob which should probably renamed to a more descriptive name, can do the following tasks: - read/write out of band data - read/write data content and out of band data - read/write raw data content and out of band data (ecc disabled) struct mtd_oob_ops has a mode field, which determines the oob handling mode. Aside of the MTD_OOB_RAW mode, which is intended to be especially for diagnostic purposes and some internal functions e.g. bad block table creation, the other two modes are for mtd clients: MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's up to the caller to make sure that the byte positions are not used by the ECC placement algorithms. MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in the out of band area which are described by the oobfree tuples in the ecclayout data structre which is associated to the devicee. The decision whether data plus oob or oob only handling is done depends on the setting of the datbuf member of the data structure. When datbuf == NULL then the internal read/write_oob functions are selected, otherwise the read/write data routines are invoked. Tested on a few platforms with all variants. Please be aware of possible regressions for your particular device / application scenario Disclaimer: Any whining will be ignored from those who just contributed "hot air blurb" and never sat down to tackle the underlying problem of the mess in the NAND driver grown over time and the big chunk of work to fix up the existing users. The problem was not the holiness of the existing MTD interfaces. The problems was the lack of time to go for the big overhaul. It's easy to add more mess to the existing one, but it takes alot of effort to go for a real solution. Improvements and bugfixes are welcome! Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
2006-05-29 08:26:58 +07:00
chip->ecc.read_page = nand_read_page_raw;
chip->ecc.write_page = nand_write_page_raw;
chip->ecc.read_oob = nand_read_oob_std;
chip->ecc.read_page_raw = nand_read_page_raw;
chip->ecc.write_page_raw = nand_write_page_raw;
chip->ecc.write_oob = nand_write_oob_std;
chip->ecc.size = mtd->writesize;
chip->ecc.bytes = 0;
break;
default:
pr_warn("Invalid NAND_ECC_MODE %d\n", chip->ecc.mode);
BUG();
}
/* For many systems, the standard OOB write also works for raw */
if (!chip->ecc.read_oob_raw)
chip->ecc.read_oob_raw = chip->ecc.read_oob;
if (!chip->ecc.write_oob_raw)
chip->ecc.write_oob_raw = chip->ecc.write_oob;
/*
* The number of bytes available for a client to place data into
* the out of band area.
*/
chip->ecc.layout->oobavail = 0;
for (i = 0; chip->ecc.layout->oobfree[i].length
&& i < ARRAY_SIZE(chip->ecc.layout->oobfree); i++)
chip->ecc.layout->oobavail +=
chip->ecc.layout->oobfree[i].length;
mtd->oobavail = chip->ecc.layout->oobavail;
/*
* Set the number of read / write steps for one page depending on ECC
* mode.
*/
chip->ecc.steps = mtd->writesize / chip->ecc.size;
if (chip->ecc.steps * chip->ecc.size != mtd->writesize) {
pr_warn("Invalid ECC parameters\n");
BUG();
}
chip->ecc.total = chip->ecc.steps * chip->ecc.bytes;
/* Allow subpage writes up to ecc.steps. Not possible for MLC flash */
if (!(chip->options & NAND_NO_SUBPAGE_WRITE) &&
!(chip->cellinfo & NAND_CI_CELLTYPE_MSK)) {
switch (chip->ecc.steps) {
case 2:
mtd->subpage_sft = 1;
break;
case 4:
case 8:
case 16:
mtd->subpage_sft = 2;
break;
}
}
chip->subpagesize = mtd->writesize >> mtd->subpage_sft;
/* Initialize state */
chip->state = FL_READY;
/* De-select the device */
chip->select_chip(mtd, -1);
/* Invalidate the pagebuffer reference */
chip->pagebuf = -1;
/* Fill in remaining MTD driver data */
mtd->type = MTD_NANDFLASH;
mtd->flags = (chip->options & NAND_ROM) ? MTD_CAP_ROM :
MTD_CAP_NANDFLASH;
mtd->erase = nand_erase;
mtd->point = NULL;
mtd->unpoint = NULL;
mtd->read = nand_read;
mtd->write = nand_write;
mtd->panic_write = panic_nand_write;
mtd->read_oob = nand_read_oob;
mtd->write_oob = nand_write_oob;
mtd->sync = nand_sync;
mtd->lock = NULL;
mtd->unlock = NULL;
mtd->suspend = nand_suspend;
mtd->resume = nand_resume;
mtd->block_isbad = nand_block_isbad;
mtd->block_markbad = nand_block_markbad;
mtd->writebufsize = mtd->writesize;
/* propagate ecc.layout to mtd_info */
mtd->ecclayout = chip->ecc.layout;
/* Check, if we should skip the bad block table scan */
if (chip->options & NAND_SKIP_BBTSCAN)
return 0;
/* Build bad block table */
return chip->scan_bbt(mtd);
}
EXPORT_SYMBOL(nand_scan_tail);
/*
* is_module_text_address() isn't exported, and it's mostly a pointless
* test if this is a module _anyway_ -- they'd have to try _really_ hard
* to call us from in-kernel code if the core NAND support is modular.
*/
#ifdef MODULE
#define caller_is_module() (1)
#else
#define caller_is_module() \
is_module_text_address((unsigned long)__builtin_return_address(0))
#endif
/**
* nand_scan - [NAND Interface] Scan for the NAND device
* @mtd: MTD device structure
* @maxchips: number of chips to scan for
*
* This fills out all the uninitialized function pointers with the defaults.
* The flash ID is read and the mtd/chip structures are filled with the
* appropriate values. The mtd->owner field must be set to the module of the
* caller.
*/
int nand_scan(struct mtd_info *mtd, int maxchips)
{
int ret;
/* Many callers got this wrong, so check for it for a while... */
if (!mtd->owner && caller_is_module()) {
pr_crit("%s called with NULL mtd->owner!\n", __func__);
BUG();
}
ret = nand_scan_ident(mtd, maxchips, NULL);
if (!ret)
ret = nand_scan_tail(mtd);
return ret;
}
EXPORT_SYMBOL(nand_scan);
/**
* nand_release - [NAND Interface] Free resources held by the NAND device
* @mtd: MTD device structure
*/
void nand_release(struct mtd_info *mtd)
{
struct nand_chip *chip = mtd->priv;
if (chip->ecc.mode == NAND_ECC_SOFT_BCH)
nand_bch_free((struct nand_bch_control *)chip->ecc.priv);
mtd_device_unregister(mtd);
/* Free bad block table memory */
kfree(chip->bbt);
if (!(chip->options & NAND_OWN_BUFFERS))
kfree(chip->buffers);
mtd: nand: more BB Detection refactoring and dynamic scan options This is a revision to PATCH 2/2 that I sent. Link: http://lists.infradead.org/pipermail/linux-mtd/2010-July/030911.html Added new flag for scanning of both bytes 1 and 6 of the OOB for a BB marker (instead of simply one or the other). The "check_pattern" and "check_short_pattern" functions were updated to include support for scanning the two different locations in the OOB. In order to handle increases in variety of necessary scanning patterns, I implemented dynamic memory allocation of nand_bbt_descr structs in new function 'nand_create_default_bbt_descr()'. This replaces some increasingly-unwieldy, statically-declared descriptors. It can replace several more (e.g. "flashbased" structs). However, I do not test the flashbased options personally. How this was tested: I referenced 30+ data sheets (covering 100+ parts), and I tested a selection of 10 different chips to varying degrees. Particularly, I tested the creation of bad-block descriptors and basic BB scanning on three parts: ST NAND04GW3B2D, 2K page ST NAND128W3A, 512B page Samsung K9F1G08U0A, 2K page To test these, I wrote some fake bad block markers to the flash (in OOB bytes 1, 6, and elsewhere) to see if the scanning routine would detect them properly. However, this method was somewhat limited because the driver I am using has some bugs in its OOB write functionality. Signed-off-by: Brian Norris <norris@broadcom.com> Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com> Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
2010-07-16 02:15:44 +07:00
/* Free bad block descriptor memory */
if (chip->badblock_pattern && chip->badblock_pattern->options
& NAND_BBT_DYNAMICSTRUCT)
kfree(chip->badblock_pattern);
}
EXPORT_SYMBOL_GPL(nand_release);
static int __init nand_base_init(void)
{
led_trigger_register_simple("nand-disk", &nand_led_trigger);
return 0;
}
static void __exit nand_base_exit(void)
{
led_trigger_unregister_simple(nand_led_trigger);
}
module_init(nand_base_init);
module_exit(nand_base_exit);
MODULE_LICENSE("GPL");
MODULE_AUTHOR("Steven J. Hill <sjhill@realitydiluted.com>");
MODULE_AUTHOR("Thomas Gleixner <tglx@linutronix.de>");
MODULE_DESCRIPTION("Generic NAND flash driver code");