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7b8278358c
Haswell memory controller can make use of DDR4 and Registered DDR4 Cc: tony.luck@intel.com Signed-off-by: Aristeu Rozanski <aris@redhat.com> Signed-off-by: Mauro Carvalho Chehab <m.chehab@samsung.com>
784 lines
24 KiB
C
784 lines
24 KiB
C
/*
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* Generic EDAC defs
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*
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* Author: Dave Jiang <djiang@mvista.com>
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*
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* 2006-2008 (c) MontaVista Software, Inc. This file is licensed under
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* the terms of the GNU General Public License version 2. This program
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* is licensed "as is" without any warranty of any kind, whether express
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* or implied.
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*
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*/
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#ifndef _LINUX_EDAC_H_
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#define _LINUX_EDAC_H_
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#include <linux/atomic.h>
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#include <linux/device.h>
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#include <linux/completion.h>
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#include <linux/workqueue.h>
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#include <linux/debugfs.h>
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struct device;
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#define EDAC_OPSTATE_INVAL -1
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#define EDAC_OPSTATE_POLL 0
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#define EDAC_OPSTATE_NMI 1
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#define EDAC_OPSTATE_INT 2
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extern int edac_op_state;
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extern int edac_err_assert;
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extern atomic_t edac_handlers;
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extern struct bus_type edac_subsys;
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extern int edac_handler_set(void);
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extern void edac_atomic_assert_error(void);
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extern struct bus_type *edac_get_sysfs_subsys(void);
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extern void edac_put_sysfs_subsys(void);
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enum {
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EDAC_REPORTING_ENABLED,
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EDAC_REPORTING_DISABLED,
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EDAC_REPORTING_FORCE
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};
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extern int edac_report_status;
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#ifdef CONFIG_EDAC
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static inline int get_edac_report_status(void)
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{
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return edac_report_status;
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}
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static inline void set_edac_report_status(int new)
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{
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edac_report_status = new;
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}
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#else
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static inline int get_edac_report_status(void)
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{
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return EDAC_REPORTING_DISABLED;
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}
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static inline void set_edac_report_status(int new)
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{
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}
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#endif
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static inline void opstate_init(void)
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{
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switch (edac_op_state) {
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case EDAC_OPSTATE_POLL:
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case EDAC_OPSTATE_NMI:
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break;
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default:
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edac_op_state = EDAC_OPSTATE_POLL;
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}
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return;
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}
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/* Max length of a DIMM label*/
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#define EDAC_MC_LABEL_LEN 31
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/* Maximum size of the location string */
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#define LOCATION_SIZE 256
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/* Defines the maximum number of labels that can be reported */
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#define EDAC_MAX_LABELS 8
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/* String used to join two or more labels */
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#define OTHER_LABEL " or "
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/**
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* enum dev_type - describe the type of memory DRAM chips used at the stick
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* @DEV_UNKNOWN: Can't be determined, or MC doesn't support detect it
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* @DEV_X1: 1 bit for data
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* @DEV_X2: 2 bits for data
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* @DEV_X4: 4 bits for data
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* @DEV_X8: 8 bits for data
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* @DEV_X16: 16 bits for data
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* @DEV_X32: 32 bits for data
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* @DEV_X64: 64 bits for data
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*
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* Typical values are x4 and x8.
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*/
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enum dev_type {
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DEV_UNKNOWN = 0,
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DEV_X1,
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DEV_X2,
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DEV_X4,
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DEV_X8,
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DEV_X16,
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DEV_X32, /* Do these parts exist? */
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DEV_X64 /* Do these parts exist? */
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};
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#define DEV_FLAG_UNKNOWN BIT(DEV_UNKNOWN)
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#define DEV_FLAG_X1 BIT(DEV_X1)
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#define DEV_FLAG_X2 BIT(DEV_X2)
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#define DEV_FLAG_X4 BIT(DEV_X4)
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#define DEV_FLAG_X8 BIT(DEV_X8)
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#define DEV_FLAG_X16 BIT(DEV_X16)
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#define DEV_FLAG_X32 BIT(DEV_X32)
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#define DEV_FLAG_X64 BIT(DEV_X64)
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/**
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* enum hw_event_mc_err_type - type of the detected error
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*
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* @HW_EVENT_ERR_CORRECTED: Corrected Error - Indicates that an ECC
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* corrected error was detected
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* @HW_EVENT_ERR_UNCORRECTED: Uncorrected Error - Indicates an error that
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* can't be corrected by ECC, but it is not
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* fatal (maybe it is on an unused memory area,
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* or the memory controller could recover from
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* it for example, by re-trying the operation).
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* @HW_EVENT_ERR_FATAL: Fatal Error - Uncorrected error that could not
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* be recovered.
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*/
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enum hw_event_mc_err_type {
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HW_EVENT_ERR_CORRECTED,
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HW_EVENT_ERR_UNCORRECTED,
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HW_EVENT_ERR_FATAL,
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HW_EVENT_ERR_INFO,
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};
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static inline char *mc_event_error_type(const unsigned int err_type)
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{
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switch (err_type) {
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case HW_EVENT_ERR_CORRECTED:
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return "Corrected";
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case HW_EVENT_ERR_UNCORRECTED:
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return "Uncorrected";
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case HW_EVENT_ERR_FATAL:
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return "Fatal";
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default:
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case HW_EVENT_ERR_INFO:
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return "Info";
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}
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}
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/**
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* enum mem_type - memory types. For a more detailed reference, please see
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* http://en.wikipedia.org/wiki/DRAM
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*
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* @MEM_EMPTY Empty csrow
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* @MEM_RESERVED: Reserved csrow type
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* @MEM_UNKNOWN: Unknown csrow type
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* @MEM_FPM: FPM - Fast Page Mode, used on systems up to 1995.
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* @MEM_EDO: EDO - Extended data out, used on systems up to 1998.
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* @MEM_BEDO: BEDO - Burst Extended data out, an EDO variant.
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* @MEM_SDR: SDR - Single data rate SDRAM
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* http://en.wikipedia.org/wiki/Synchronous_dynamic_random-access_memory
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* They use 3 pins for chip select: Pins 0 and 2 are
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* for rank 0; pins 1 and 3 are for rank 1, if the memory
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* is dual-rank.
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* @MEM_RDR: Registered SDR SDRAM
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* @MEM_DDR: Double data rate SDRAM
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* http://en.wikipedia.org/wiki/DDR_SDRAM
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* @MEM_RDDR: Registered Double data rate SDRAM
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* This is a variant of the DDR memories.
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* A registered memory has a buffer inside it, hiding
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* part of the memory details to the memory controller.
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* @MEM_RMBS: Rambus DRAM, used on a few Pentium III/IV controllers.
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* @MEM_DDR2: DDR2 RAM, as described at JEDEC JESD79-2F.
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* Those memories are labed as "PC2-" instead of "PC" to
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* differenciate from DDR.
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* @MEM_FB_DDR2: Fully-Buffered DDR2, as described at JEDEC Std No. 205
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* and JESD206.
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* Those memories are accessed per DIMM slot, and not by
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* a chip select signal.
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* @MEM_RDDR2: Registered DDR2 RAM
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* This is a variant of the DDR2 memories.
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* @MEM_XDR: Rambus XDR
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* It is an evolution of the original RAMBUS memories,
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* created to compete with DDR2. Weren't used on any
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* x86 arch, but cell_edac PPC memory controller uses it.
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* @MEM_DDR3: DDR3 RAM
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* @MEM_RDDR3: Registered DDR3 RAM
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* This is a variant of the DDR3 memories.
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* @MEM_DDR4: DDR4 RAM
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* @MEM_RDDR4: Registered DDR4 RAM
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* This is a variant of the DDR4 memories.
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*/
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enum mem_type {
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MEM_EMPTY = 0,
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MEM_RESERVED,
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MEM_UNKNOWN,
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MEM_FPM,
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MEM_EDO,
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MEM_BEDO,
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MEM_SDR,
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MEM_RDR,
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MEM_DDR,
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MEM_RDDR,
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MEM_RMBS,
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MEM_DDR2,
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MEM_FB_DDR2,
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MEM_RDDR2,
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MEM_XDR,
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MEM_DDR3,
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MEM_RDDR3,
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MEM_DDR4,
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MEM_RDDR4,
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};
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#define MEM_FLAG_EMPTY BIT(MEM_EMPTY)
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#define MEM_FLAG_RESERVED BIT(MEM_RESERVED)
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#define MEM_FLAG_UNKNOWN BIT(MEM_UNKNOWN)
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#define MEM_FLAG_FPM BIT(MEM_FPM)
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#define MEM_FLAG_EDO BIT(MEM_EDO)
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#define MEM_FLAG_BEDO BIT(MEM_BEDO)
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#define MEM_FLAG_SDR BIT(MEM_SDR)
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#define MEM_FLAG_RDR BIT(MEM_RDR)
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#define MEM_FLAG_DDR BIT(MEM_DDR)
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#define MEM_FLAG_RDDR BIT(MEM_RDDR)
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#define MEM_FLAG_RMBS BIT(MEM_RMBS)
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#define MEM_FLAG_DDR2 BIT(MEM_DDR2)
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#define MEM_FLAG_FB_DDR2 BIT(MEM_FB_DDR2)
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#define MEM_FLAG_RDDR2 BIT(MEM_RDDR2)
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#define MEM_FLAG_XDR BIT(MEM_XDR)
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#define MEM_FLAG_DDR3 BIT(MEM_DDR3)
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#define MEM_FLAG_RDDR3 BIT(MEM_RDDR3)
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/**
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* enum edac-type - Error Detection and Correction capabilities and mode
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* @EDAC_UNKNOWN: Unknown if ECC is available
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* @EDAC_NONE: Doesn't support ECC
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* @EDAC_RESERVED: Reserved ECC type
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* @EDAC_PARITY: Detects parity errors
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* @EDAC_EC: Error Checking - no correction
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* @EDAC_SECDED: Single bit error correction, Double detection
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* @EDAC_S2ECD2ED: Chipkill x2 devices - do these exist?
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* @EDAC_S4ECD4ED: Chipkill x4 devices
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* @EDAC_S8ECD8ED: Chipkill x8 devices
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* @EDAC_S16ECD16ED: Chipkill x16 devices
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*/
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enum edac_type {
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EDAC_UNKNOWN = 0,
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EDAC_NONE,
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EDAC_RESERVED,
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EDAC_PARITY,
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EDAC_EC,
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EDAC_SECDED,
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EDAC_S2ECD2ED,
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EDAC_S4ECD4ED,
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EDAC_S8ECD8ED,
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EDAC_S16ECD16ED,
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};
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#define EDAC_FLAG_UNKNOWN BIT(EDAC_UNKNOWN)
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#define EDAC_FLAG_NONE BIT(EDAC_NONE)
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#define EDAC_FLAG_PARITY BIT(EDAC_PARITY)
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#define EDAC_FLAG_EC BIT(EDAC_EC)
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#define EDAC_FLAG_SECDED BIT(EDAC_SECDED)
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#define EDAC_FLAG_S2ECD2ED BIT(EDAC_S2ECD2ED)
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#define EDAC_FLAG_S4ECD4ED BIT(EDAC_S4ECD4ED)
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#define EDAC_FLAG_S8ECD8ED BIT(EDAC_S8ECD8ED)
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#define EDAC_FLAG_S16ECD16ED BIT(EDAC_S16ECD16ED)
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/**
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* enum scrub_type - scrubbing capabilities
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* @SCRUB_UNKNOWN Unknown if scrubber is available
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* @SCRUB_NONE: No scrubber
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* @SCRUB_SW_PROG: SW progressive (sequential) scrubbing
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* @SCRUB_SW_SRC: Software scrub only errors
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* @SCRUB_SW_PROG_SRC: Progressive software scrub from an error
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* @SCRUB_SW_TUNABLE: Software scrub frequency is tunable
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* @SCRUB_HW_PROG: HW progressive (sequential) scrubbing
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* @SCRUB_HW_SRC: Hardware scrub only errors
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* @SCRUB_HW_PROG_SRC: Progressive hardware scrub from an error
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* SCRUB_HW_TUNABLE: Hardware scrub frequency is tunable
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*/
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enum scrub_type {
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SCRUB_UNKNOWN = 0,
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SCRUB_NONE,
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SCRUB_SW_PROG,
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SCRUB_SW_SRC,
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SCRUB_SW_PROG_SRC,
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SCRUB_SW_TUNABLE,
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SCRUB_HW_PROG,
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SCRUB_HW_SRC,
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SCRUB_HW_PROG_SRC,
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SCRUB_HW_TUNABLE
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};
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#define SCRUB_FLAG_SW_PROG BIT(SCRUB_SW_PROG)
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#define SCRUB_FLAG_SW_SRC BIT(SCRUB_SW_SRC)
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#define SCRUB_FLAG_SW_PROG_SRC BIT(SCRUB_SW_PROG_SRC)
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#define SCRUB_FLAG_SW_TUN BIT(SCRUB_SW_SCRUB_TUNABLE)
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#define SCRUB_FLAG_HW_PROG BIT(SCRUB_HW_PROG)
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#define SCRUB_FLAG_HW_SRC BIT(SCRUB_HW_SRC)
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#define SCRUB_FLAG_HW_PROG_SRC BIT(SCRUB_HW_PROG_SRC)
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#define SCRUB_FLAG_HW_TUN BIT(SCRUB_HW_TUNABLE)
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/* FIXME - should have notify capabilities: NMI, LOG, PROC, etc */
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/* EDAC internal operation states */
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#define OP_ALLOC 0x100
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#define OP_RUNNING_POLL 0x201
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#define OP_RUNNING_INTERRUPT 0x202
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#define OP_RUNNING_POLL_INTR 0x203
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#define OP_OFFLINE 0x300
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/*
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* Concepts used at the EDAC subsystem
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*
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* There are several things to be aware of that aren't at all obvious:
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*
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* SOCKETS, SOCKET SETS, BANKS, ROWS, CHIP-SELECT ROWS, CHANNELS, etc..
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*
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* These are some of the many terms that are thrown about that don't always
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* mean what people think they mean (Inconceivable!). In the interest of
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* creating a common ground for discussion, terms and their definitions
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* will be established.
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*
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* Memory devices: The individual DRAM chips on a memory stick. These
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* devices commonly output 4 and 8 bits each (x4, x8).
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* Grouping several of these in parallel provides the
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* number of bits that the memory controller expects:
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* typically 72 bits, in order to provide 64 bits +
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* 8 bits of ECC data.
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*
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* Memory Stick: A printed circuit board that aggregates multiple
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* memory devices in parallel. In general, this is the
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* Field Replaceable Unit (FRU) which gets replaced, in
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* the case of excessive errors. Most often it is also
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* called DIMM (Dual Inline Memory Module).
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*
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* Memory Socket: A physical connector on the motherboard that accepts
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* a single memory stick. Also called as "slot" on several
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* datasheets.
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*
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* Channel: A memory controller channel, responsible to communicate
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* with a group of DIMMs. Each channel has its own
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* independent control (command) and data bus, and can
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* be used independently or grouped with other channels.
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*
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* Branch: It is typically the highest hierarchy on a
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* Fully-Buffered DIMM memory controller.
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* Typically, it contains two channels.
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* Two channels at the same branch can be used in single
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* mode or in lockstep mode.
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* When lockstep is enabled, the cacheline is doubled,
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* but it generally brings some performance penalty.
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* Also, it is generally not possible to point to just one
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* memory stick when an error occurs, as the error
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* correction code is calculated using two DIMMs instead
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* of one. Due to that, it is capable of correcting more
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* errors than on single mode.
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*
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* Single-channel: The data accessed by the memory controller is contained
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* into one dimm only. E. g. if the data is 64 bits-wide,
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* the data flows to the CPU using one 64 bits parallel
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* access.
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* Typically used with SDR, DDR, DDR2 and DDR3 memories.
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* FB-DIMM and RAMBUS use a different concept for channel,
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* so this concept doesn't apply there.
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*
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* Double-channel: The data size accessed by the memory controller is
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* interlaced into two dimms, accessed at the same time.
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* E. g. if the DIMM is 64 bits-wide (72 bits with ECC),
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* the data flows to the CPU using a 128 bits parallel
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* access.
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*
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* Chip-select row: This is the name of the DRAM signal used to select the
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* DRAM ranks to be accessed. Common chip-select rows for
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* single channel are 64 bits, for dual channel 128 bits.
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* It may not be visible by the memory controller, as some
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* DIMM types have a memory buffer that can hide direct
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* access to it from the Memory Controller.
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*
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* Single-Ranked stick: A Single-ranked stick has 1 chip-select row of memory.
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* Motherboards commonly drive two chip-select pins to
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* a memory stick. A single-ranked stick, will occupy
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* only one of those rows. The other will be unused.
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*
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* Double-Ranked stick: A double-ranked stick has two chip-select rows which
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* access different sets of memory devices. The two
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* rows cannot be accessed concurrently.
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*
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* Double-sided stick: DEPRECATED TERM, see Double-Ranked stick.
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* A double-sided stick has two chip-select rows which
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* access different sets of memory devices. The two
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* rows cannot be accessed concurrently. "Double-sided"
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* is irrespective of the memory devices being mounted
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* on both sides of the memory stick.
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*
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* Socket set: All of the memory sticks that are required for
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* a single memory access or all of the memory sticks
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* spanned by a chip-select row. A single socket set
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* has two chip-select rows and if double-sided sticks
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* are used these will occupy those chip-select rows.
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*
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* Bank: This term is avoided because it is unclear when
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* needing to distinguish between chip-select rows and
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* socket sets.
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*
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* Controller pages:
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*
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* Physical pages:
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*
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* Virtual pages:
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*
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*
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* STRUCTURE ORGANIZATION AND CHOICES
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*
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*
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*
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* PS - I enjoyed writing all that about as much as you enjoyed reading it.
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*/
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/**
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* enum edac_mc_layer - memory controller hierarchy layer
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*
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* @EDAC_MC_LAYER_BRANCH: memory layer is named "branch"
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* @EDAC_MC_LAYER_CHANNEL: memory layer is named "channel"
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* @EDAC_MC_LAYER_SLOT: memory layer is named "slot"
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* @EDAC_MC_LAYER_CHIP_SELECT: memory layer is named "chip select"
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* @EDAC_MC_LAYER_ALL_MEM: memory layout is unknown. All memory is mapped
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* as a single memory area. This is used when
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* retrieving errors from a firmware driven driver.
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*
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* This enum is used by the drivers to tell edac_mc_sysfs what name should
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* be used when describing a memory stick location.
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*/
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enum edac_mc_layer_type {
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EDAC_MC_LAYER_BRANCH,
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EDAC_MC_LAYER_CHANNEL,
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EDAC_MC_LAYER_SLOT,
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EDAC_MC_LAYER_CHIP_SELECT,
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EDAC_MC_LAYER_ALL_MEM,
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};
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/**
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* struct edac_mc_layer - describes the memory controller hierarchy
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* @layer: layer type
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* @size: number of components per layer. For example,
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* if the channel layer has two channels, size = 2
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* @is_virt_csrow: This layer is part of the "csrow" when old API
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* compatibility mode is enabled. Otherwise, it is
|
|
* a channel
|
|
*/
|
|
struct edac_mc_layer {
|
|
enum edac_mc_layer_type type;
|
|
unsigned size;
|
|
bool is_virt_csrow;
|
|
};
|
|
|
|
/*
|
|
* Maximum number of layers used by the memory controller to uniquely
|
|
* identify a single memory stick.
|
|
* NOTE: Changing this constant requires not only to change the constant
|
|
* below, but also to change the existing code at the core, as there are
|
|
* some code there that are optimized for 3 layers.
|
|
*/
|
|
#define EDAC_MAX_LAYERS 3
|
|
|
|
/**
|
|
* EDAC_DIMM_OFF - Macro responsible to get a pointer offset inside a pointer array
|
|
* for the element given by [layer0,layer1,layer2] position
|
|
*
|
|
* @layers: a struct edac_mc_layer array, describing how many elements
|
|
* were allocated for each layer
|
|
* @n_layers: Number of layers at the @layers array
|
|
* @layer0: layer0 position
|
|
* @layer1: layer1 position. Unused if n_layers < 2
|
|
* @layer2: layer2 position. Unused if n_layers < 3
|
|
*
|
|
* For 1 layer, this macro returns &var[layer0] - &var
|
|
* For 2 layers, this macro is similar to allocate a bi-dimensional array
|
|
* and to return "&var[layer0][layer1] - &var"
|
|
* For 3 layers, this macro is similar to allocate a tri-dimensional array
|
|
* and to return "&var[layer0][layer1][layer2] - &var"
|
|
*
|
|
* A loop could be used here to make it more generic, but, as we only have
|
|
* 3 layers, this is a little faster.
|
|
* By design, layers can never be 0 or more than 3. If that ever happens,
|
|
* a NULL is returned, causing an OOPS during the memory allocation routine,
|
|
* with would point to the developer that he's doing something wrong.
|
|
*/
|
|
#define EDAC_DIMM_OFF(layers, nlayers, layer0, layer1, layer2) ({ \
|
|
int __i; \
|
|
if ((nlayers) == 1) \
|
|
__i = layer0; \
|
|
else if ((nlayers) == 2) \
|
|
__i = (layer1) + ((layers[1]).size * (layer0)); \
|
|
else if ((nlayers) == 3) \
|
|
__i = (layer2) + ((layers[2]).size * ((layer1) + \
|
|
((layers[1]).size * (layer0)))); \
|
|
else \
|
|
__i = -EINVAL; \
|
|
__i; \
|
|
})
|
|
|
|
/**
|
|
* EDAC_DIMM_PTR - Macro responsible to get a pointer inside a pointer array
|
|
* for the element given by [layer0,layer1,layer2] position
|
|
*
|
|
* @layers: a struct edac_mc_layer array, describing how many elements
|
|
* were allocated for each layer
|
|
* @var: name of the var where we want to get the pointer
|
|
* (like mci->dimms)
|
|
* @n_layers: Number of layers at the @layers array
|
|
* @layer0: layer0 position
|
|
* @layer1: layer1 position. Unused if n_layers < 2
|
|
* @layer2: layer2 position. Unused if n_layers < 3
|
|
*
|
|
* For 1 layer, this macro returns &var[layer0]
|
|
* For 2 layers, this macro is similar to allocate a bi-dimensional array
|
|
* and to return "&var[layer0][layer1]"
|
|
* For 3 layers, this macro is similar to allocate a tri-dimensional array
|
|
* and to return "&var[layer0][layer1][layer2]"
|
|
*/
|
|
#define EDAC_DIMM_PTR(layers, var, nlayers, layer0, layer1, layer2) ({ \
|
|
typeof(*var) __p; \
|
|
int ___i = EDAC_DIMM_OFF(layers, nlayers, layer0, layer1, layer2); \
|
|
if (___i < 0) \
|
|
__p = NULL; \
|
|
else \
|
|
__p = (var)[___i]; \
|
|
__p; \
|
|
})
|
|
|
|
struct dimm_info {
|
|
struct device dev;
|
|
|
|
char label[EDAC_MC_LABEL_LEN + 1]; /* DIMM label on motherboard */
|
|
|
|
/* Memory location data */
|
|
unsigned location[EDAC_MAX_LAYERS];
|
|
|
|
struct mem_ctl_info *mci; /* the parent */
|
|
|
|
u32 grain; /* granularity of reported error in bytes */
|
|
enum dev_type dtype; /* memory device type */
|
|
enum mem_type mtype; /* memory dimm type */
|
|
enum edac_type edac_mode; /* EDAC mode for this dimm */
|
|
|
|
u32 nr_pages; /* number of pages on this dimm */
|
|
|
|
unsigned csrow, cschannel; /* Points to the old API data */
|
|
};
|
|
|
|
/**
|
|
* struct rank_info - contains the information for one DIMM rank
|
|
*
|
|
* @chan_idx: channel number where the rank is (typically, 0 or 1)
|
|
* @ce_count: number of correctable errors for this rank
|
|
* @csrow: A pointer to the chip select row structure (the parent
|
|
* structure). The location of the rank is given by
|
|
* the (csrow->csrow_idx, chan_idx) vector.
|
|
* @dimm: A pointer to the DIMM structure, where the DIMM label
|
|
* information is stored.
|
|
*
|
|
* FIXME: Currently, the EDAC core model will assume one DIMM per rank.
|
|
* This is a bad assumption, but it makes this patch easier. Later
|
|
* patches in this series will fix this issue.
|
|
*/
|
|
struct rank_info {
|
|
int chan_idx;
|
|
struct csrow_info *csrow;
|
|
struct dimm_info *dimm;
|
|
|
|
u32 ce_count; /* Correctable Errors for this csrow */
|
|
};
|
|
|
|
struct csrow_info {
|
|
struct device dev;
|
|
|
|
/* Used only by edac_mc_find_csrow_by_page() */
|
|
unsigned long first_page; /* first page number in csrow */
|
|
unsigned long last_page; /* last page number in csrow */
|
|
unsigned long page_mask; /* used for interleaving -
|
|
* 0UL for non intlv */
|
|
|
|
int csrow_idx; /* the chip-select row */
|
|
|
|
u32 ue_count; /* Uncorrectable Errors for this csrow */
|
|
u32 ce_count; /* Correctable Errors for this csrow */
|
|
|
|
struct mem_ctl_info *mci; /* the parent */
|
|
|
|
/* channel information for this csrow */
|
|
u32 nr_channels;
|
|
struct rank_info **channels;
|
|
};
|
|
|
|
/*
|
|
* struct errcount_attribute - used to store the several error counts
|
|
*/
|
|
struct errcount_attribute_data {
|
|
int n_layers;
|
|
int pos[EDAC_MAX_LAYERS];
|
|
int layer0, layer1, layer2;
|
|
};
|
|
|
|
/**
|
|
* edac_raw_error_desc - Raw error report structure
|
|
* @grain: minimum granularity for an error report, in bytes
|
|
* @error_count: number of errors of the same type
|
|
* @top_layer: top layer of the error (layer[0])
|
|
* @mid_layer: middle layer of the error (layer[1])
|
|
* @low_layer: low layer of the error (layer[2])
|
|
* @page_frame_number: page where the error happened
|
|
* @offset_in_page: page offset
|
|
* @syndrome: syndrome of the error (or 0 if unknown or if
|
|
* the syndrome is not applicable)
|
|
* @msg: error message
|
|
* @location: location of the error
|
|
* @label: label of the affected DIMM(s)
|
|
* @other_detail: other driver-specific detail about the error
|
|
* @enable_per_layer_report: if false, the error affects all layers
|
|
* (typically, a memory controller error)
|
|
*/
|
|
struct edac_raw_error_desc {
|
|
/*
|
|
* NOTE: everything before grain won't be cleaned by
|
|
* edac_raw_error_desc_clean()
|
|
*/
|
|
char location[LOCATION_SIZE];
|
|
char label[(EDAC_MC_LABEL_LEN + 1 + sizeof(OTHER_LABEL)) * EDAC_MAX_LABELS];
|
|
long grain;
|
|
|
|
/* the vars below and grain will be cleaned on every new error report */
|
|
u16 error_count;
|
|
int top_layer;
|
|
int mid_layer;
|
|
int low_layer;
|
|
unsigned long page_frame_number;
|
|
unsigned long offset_in_page;
|
|
unsigned long syndrome;
|
|
const char *msg;
|
|
const char *other_detail;
|
|
bool enable_per_layer_report;
|
|
};
|
|
|
|
/* MEMORY controller information structure
|
|
*/
|
|
struct mem_ctl_info {
|
|
struct device dev;
|
|
struct bus_type *bus;
|
|
|
|
struct list_head link; /* for global list of mem_ctl_info structs */
|
|
|
|
struct module *owner; /* Module owner of this control struct */
|
|
|
|
unsigned long mtype_cap; /* memory types supported by mc */
|
|
unsigned long edac_ctl_cap; /* Mem controller EDAC capabilities */
|
|
unsigned long edac_cap; /* configuration capabilities - this is
|
|
* closely related to edac_ctl_cap. The
|
|
* difference is that the controller may be
|
|
* capable of s4ecd4ed which would be listed
|
|
* in edac_ctl_cap, but if channels aren't
|
|
* capable of s4ecd4ed then the edac_cap would
|
|
* not have that capability.
|
|
*/
|
|
unsigned long scrub_cap; /* chipset scrub capabilities */
|
|
enum scrub_type scrub_mode; /* current scrub mode */
|
|
|
|
/* Translates sdram memory scrub rate given in bytes/sec to the
|
|
internal representation and configures whatever else needs
|
|
to be configured.
|
|
*/
|
|
int (*set_sdram_scrub_rate) (struct mem_ctl_info * mci, u32 bw);
|
|
|
|
/* Get the current sdram memory scrub rate from the internal
|
|
representation and converts it to the closest matching
|
|
bandwidth in bytes/sec.
|
|
*/
|
|
int (*get_sdram_scrub_rate) (struct mem_ctl_info * mci);
|
|
|
|
|
|
/* pointer to edac checking routine */
|
|
void (*edac_check) (struct mem_ctl_info * mci);
|
|
|
|
/*
|
|
* Remaps memory pages: controller pages to physical pages.
|
|
* For most MC's, this will be NULL.
|
|
*/
|
|
/* FIXME - why not send the phys page to begin with? */
|
|
unsigned long (*ctl_page_to_phys) (struct mem_ctl_info * mci,
|
|
unsigned long page);
|
|
int mc_idx;
|
|
struct csrow_info **csrows;
|
|
unsigned nr_csrows, num_cschannel;
|
|
|
|
/*
|
|
* Memory Controller hierarchy
|
|
*
|
|
* There are basically two types of memory controller: the ones that
|
|
* sees memory sticks ("dimms"), and the ones that sees memory ranks.
|
|
* All old memory controllers enumerate memories per rank, but most
|
|
* of the recent drivers enumerate memories per DIMM, instead.
|
|
* When the memory controller is per rank, csbased is true.
|
|
*/
|
|
unsigned n_layers;
|
|
struct edac_mc_layer *layers;
|
|
bool csbased;
|
|
|
|
/*
|
|
* DIMM info. Will eventually remove the entire csrows_info some day
|
|
*/
|
|
unsigned tot_dimms;
|
|
struct dimm_info **dimms;
|
|
|
|
/*
|
|
* FIXME - what about controllers on other busses? - IDs must be
|
|
* unique. dev pointer should be sufficiently unique, but
|
|
* BUS:SLOT.FUNC numbers may not be unique.
|
|
*/
|
|
struct device *pdev;
|
|
const char *mod_name;
|
|
const char *mod_ver;
|
|
const char *ctl_name;
|
|
const char *dev_name;
|
|
void *pvt_info;
|
|
unsigned long start_time; /* mci load start time (in jiffies) */
|
|
|
|
/*
|
|
* drivers shouldn't access those fields directly, as the core
|
|
* already handles that.
|
|
*/
|
|
u32 ce_noinfo_count, ue_noinfo_count;
|
|
u32 ue_mc, ce_mc;
|
|
u32 *ce_per_layer[EDAC_MAX_LAYERS], *ue_per_layer[EDAC_MAX_LAYERS];
|
|
|
|
struct completion complete;
|
|
|
|
/* Additional top controller level attributes, but specified
|
|
* by the low level driver.
|
|
*
|
|
* Set by the low level driver to provide attributes at the
|
|
* controller level.
|
|
* An array of structures, NULL terminated
|
|
*
|
|
* If attributes are desired, then set to array of attributes
|
|
* If no attributes are desired, leave NULL
|
|
*/
|
|
const struct mcidev_sysfs_attribute *mc_driver_sysfs_attributes;
|
|
|
|
/* work struct for this MC */
|
|
struct delayed_work work;
|
|
|
|
/*
|
|
* Used to report an error - by being at the global struct
|
|
* makes the memory allocated by the EDAC core
|
|
*/
|
|
struct edac_raw_error_desc error_desc;
|
|
|
|
/* the internal state of this controller instance */
|
|
int op_state;
|
|
|
|
#ifdef CONFIG_EDAC_DEBUG
|
|
struct dentry *debugfs;
|
|
u8 fake_inject_layer[EDAC_MAX_LAYERS];
|
|
u32 fake_inject_ue;
|
|
u16 fake_inject_count;
|
|
#endif
|
|
};
|
|
|
|
/*
|
|
* Maximum number of memory controllers in the coherent fabric.
|
|
*/
|
|
#define EDAC_MAX_MCS 16
|
|
|
|
#endif
|